BR112022008106A2 - Pixel com drenagem aumentada - Google Patents

Pixel com drenagem aumentada

Info

Publication number
BR112022008106A2
BR112022008106A2 BR112022008106A BR112022008106A BR112022008106A2 BR 112022008106 A2 BR112022008106 A2 BR 112022008106A2 BR 112022008106 A BR112022008106 A BR 112022008106A BR 112022008106 A BR112022008106 A BR 112022008106A BR 112022008106 A2 BR112022008106 A2 BR 112022008106A2
Authority
BR
Brazil
Prior art keywords
pixel
region
photodetection
drain
integrated circuit
Prior art date
Application number
BR112022008106A
Other languages
English (en)
Inventor
Rearick Todd
GHASEMI Farshid
Original Assignee
Quantum Si Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantum Si Inc filed Critical Quantum Si Inc
Publication of BR112022008106A2 publication Critical patent/BR112022008106A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
    • C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
    • C12Q1/68—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids
    • C12Q1/6869—Methods for sequencing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • G01N2021/6439—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" with indicators, stains, dyes, tags, labels, marks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • Organic Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Zoology (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Molecular Biology (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Biotechnology (AREA)
  • Microbiology (AREA)
  • Genetics & Genomics (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PIXEL COM DRENAGEM AUMENTADA. A presente invenção refere-se a um circuito integrado que compreende: um pixel que compreende: uma região de fotodetecção; e um dreno configurado para descartar portadores de carga de dentro de uma região semicondutora do pixel fora da região de fotodetecção. Algumas modalidades referem-se a um circuito integrado que compreende: um pixel que compreende: uma região de fotodetecção; e um dreno configurado para descartar portadores de carga da região de fotodetecção, em que o dreno compreende uma região semicondutora e a região semicondutora é contatada por um contato metálico. Algumas modalidades referem-se a um circuito integrado que compreende: um pixel que compreende: uma região de fotodetecção; e um dreno configurado para descartar portadores de carga da região de fotodetecção, em que o dreno compreende uma região semicondutora com a qual o contato elétrico é feito através de um percurso condutor que não inclui um eletrodo de polissilício.
BR112022008106A 2019-10-31 2020-10-30 Pixel com drenagem aumentada BR112022008106A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962928596P 2019-10-31 2019-10-31
PCT/US2020/058134 WO2021087216A1 (en) 2019-10-31 2020-10-30 Pixel with enhanced drain

Publications (1)

Publication Number Publication Date
BR112022008106A2 true BR112022008106A2 (pt) 2022-07-19

Family

ID=73646419

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112022008106A BR112022008106A2 (pt) 2019-10-31 2020-10-30 Pixel com drenagem aumentada

Country Status (12)

Country Link
US (1) US20210134855A1 (pt)
EP (1) EP4052295A1 (pt)
JP (1) JP2023501225A (pt)
KR (1) KR20220091534A (pt)
CN (1) CN114902419A (pt)
AU (1) AU2020375931A1 (pt)
BR (1) BR112022008106A2 (pt)
CA (1) CA3159371A1 (pt)
IL (1) IL292527A (pt)
MX (1) MX2022005263A (pt)
TW (1) TW202137577A (pt)
WO (1) WO2021087216A1 (pt)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220025853A (ko) 2019-06-28 2022-03-03 퀀텀-에스아이 인코포레이티드 광학적 및 전기적 2차 경로 제거
CN115884979A (zh) 2020-01-21 2023-03-31 宽腾矽公司 用于选择性c-末端标记的化合物和方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004522303A (ja) * 2001-04-19 2004-07-22 エスティーマイクロエレクトロニクス ソチエタ レスポンサビリタ リミテ 集積された半導体デバイスのためのコンタクト構造
JP4540899B2 (ja) * 2001-09-13 2010-09-08 パナソニック株式会社 半導体装置の製造方法
DE102011079747A1 (de) * 2010-07-27 2012-02-02 Denso Corporation Halbleitervorrichtung mit Schaltelement und Freilaufdiode, sowie Steuerverfahren hierfür
DE102011076635B3 (de) * 2011-05-27 2012-10-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Detektor zur Detektion elektromagnetischer Strahlung mit Transfersteuerelektrode und Abflusssteuerelektrode
IL238339B (en) * 2014-08-04 2020-05-31 Sensors Unlimited Inc A low-noise hybridization detector based on charge transfer
BR112019012540A2 (pt) 2016-12-22 2019-11-12 Quantum-Si Incorporated fotodetector integrado com pixel de acondicionamento direto
JP7121468B2 (ja) * 2017-02-24 2022-08-18 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器
US10741592B2 (en) * 2018-06-07 2020-08-11 Semiconductor Components Industries, Llc Image sensors with multi-photodiode image pixels and vertical transfer gates

Also Published As

Publication number Publication date
EP4052295A1 (en) 2022-09-07
MX2022005263A (es) 2022-08-25
JP2023501225A (ja) 2023-01-18
WO2021087216A1 (en) 2021-05-06
US20210134855A1 (en) 2021-05-06
KR20220091534A (ko) 2022-06-30
IL292527A (en) 2022-06-01
TW202137577A (zh) 2021-10-01
AU2020375931A1 (en) 2022-06-02
CN114902419A (zh) 2022-08-12
CA3159371A1 (en) 2021-05-06

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Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]