BR112015028033A2 - método para melhorar largura de banda em dispositivos de memória empilhados - Google Patents
método para melhorar largura de banda em dispositivos de memória empilhadosInfo
- Publication number
- BR112015028033A2 BR112015028033A2 BR112015028033A BR112015028033A BR112015028033A2 BR 112015028033 A2 BR112015028033 A2 BR 112015028033A2 BR 112015028033 A BR112015028033 A BR 112015028033A BR 112015028033 A BR112015028033 A BR 112015028033A BR 112015028033 A2 BR112015028033 A2 BR 112015028033A2
- Authority
- BR
- Brazil
- Prior art keywords
- memory device
- memory
- stacked
- bandwidth
- stacked memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/066—Means for reducing external access-lines for a semiconductor memory clip, e.g. by multiplexing at least address and data signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1003—Interface circuits for daisy chain or ring bus memory arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- Data Exchanges In Wide-Area Networks (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Abstract
resumo patente de invenção: "método para melhorar largura de banda em dispositivos de memória empilhados". a invenção refere-se a um aparelho e métodos de aumento da taxa de dados e largura de banda de memória de sistema que inclui matriz de dispositivo de memória empilhada. a memória de sistema inclui um dispositivo de memória que tem uma pluralidade de matrizes de dispositivo de memória em uma configuração empilhada, um controlador de memória acoplado à matriz de dispositivo de memória empilhada e um barramento de dados particionado. as matrizes de dispositivo de memória incluem, cada uma, um, dois ou mais grupos de bancos de memória. configurando-se cada matriz de dispositivo de memória para entregar toda sua largura de banda por uma partição única diferente do canal de dados, a memória de sistema pode conseguir uma taxa de dados e uma largura de banda aumentadas sem aumentar significativamente os custos sobre configurações típicas de memória de sistema que incluem matriz de dispositivo de memória empilhada.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/913,628 US8964443B2 (en) | 2013-06-10 | 2013-06-10 | Method for improving bandwidth in stacked memory devices |
PCT/US2014/039944 WO2014200701A1 (en) | 2013-06-10 | 2014-05-29 | Method for improving bandwidth in stacked memory devices |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112015028033A2 true BR112015028033A2 (pt) | 2017-07-25 |
Family
ID=52005352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112015028033A BR112015028033A2 (pt) | 2013-06-10 | 2014-05-29 | método para melhorar largura de banda em dispositivos de memória empilhados |
Country Status (8)
Country | Link |
---|---|
US (1) | US8964443B2 (pt) |
EP (1) | EP3008730B1 (pt) |
JP (1) | JP6028295B2 (pt) |
KR (1) | KR101746325B1 (pt) |
CN (1) | CN105190758B (pt) |
BR (1) | BR112015028033A2 (pt) |
RU (1) | RU2636670C2 (pt) |
WO (1) | WO2014200701A1 (pt) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10360972B2 (en) | 2015-03-10 | 2019-07-23 | Rambus Inc. | Memories and memory components with interconnected and redundant data interfaces |
US9870325B2 (en) * | 2015-05-19 | 2018-01-16 | Intel Corporation | Common die implementation for memory devices with independent interface paths |
KR102468698B1 (ko) * | 2015-12-23 | 2022-11-22 | 에스케이하이닉스 주식회사 | 메모리 장치 |
US10996890B2 (en) | 2018-12-19 | 2021-05-04 | Micron Technology, Inc. | Memory module interfaces |
CN110164487A (zh) * | 2019-04-08 | 2019-08-23 | 苏州汇峰微电子有限公司 | 一种动态随机存储器的架构 |
US11308017B2 (en) * | 2019-05-31 | 2022-04-19 | Micron Technology, Inc. | Reconfigurable channel interfaces for memory devices |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU1316047A1 (ru) * | 1986-01-06 | 1987-06-07 | Северо-Западный Заочный Политехнический Институт | Логическое запоминающее устройство |
JP4419049B2 (ja) * | 2003-04-21 | 2010-02-24 | エルピーダメモリ株式会社 | メモリモジュール及びメモリシステム |
US7200021B2 (en) | 2004-12-10 | 2007-04-03 | Infineon Technologies Ag | Stacked DRAM memory chip for a dual inline memory module (DIMM) |
KR100805696B1 (ko) | 2005-09-29 | 2008-02-21 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
US7652922B2 (en) * | 2005-09-30 | 2010-01-26 | Mosaid Technologies Incorporated | Multiple independent serial link memory |
JP4828251B2 (ja) * | 2006-02-22 | 2011-11-30 | エルピーダメモリ株式会社 | 積層型半導体記憶装置及びその制御方法 |
JP2008140220A (ja) * | 2006-12-04 | 2008-06-19 | Nec Corp | 半導体装置 |
US8018752B2 (en) * | 2009-03-23 | 2011-09-13 | Micron Technology, Inc. | Configurable bandwidth memory devices and methods |
WO2010117535A2 (en) * | 2009-03-30 | 2010-10-14 | Rambus Inc. | Memory system, controller and device that supports a merged memory command protocol |
JP2011081885A (ja) * | 2009-10-09 | 2011-04-21 | Elpida Memory Inc | 半導体装置及びその制御方法並びにデータ処理システム |
JP5654855B2 (ja) * | 2010-11-30 | 2015-01-14 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置 |
KR20130011138A (ko) * | 2011-07-20 | 2013-01-30 | 삼성전자주식회사 | 모노 랭크와 멀티 랭크로 호환 가능한 메모리 장치 |
US8437164B1 (en) | 2011-07-27 | 2013-05-07 | Apple Inc. | Stacked memory device for a configurable bandwidth memory interface |
US9117496B2 (en) * | 2012-01-30 | 2015-08-25 | Rambus Inc. | Memory device comprising programmable command-and-address and/or data interfaces |
-
2013
- 2013-06-10 US US13/913,628 patent/US8964443B2/en active Active
-
2014
- 2014-05-29 WO PCT/US2014/039944 patent/WO2014200701A1/en active Application Filing
- 2014-05-29 EP EP14811206.3A patent/EP3008730B1/en active Active
- 2014-05-29 RU RU2015148286A patent/RU2636670C2/ru active
- 2014-05-29 KR KR1020157030403A patent/KR101746325B1/ko active IP Right Grant
- 2014-05-29 CN CN201480026627.2A patent/CN105190758B/zh active Active
- 2014-05-29 JP JP2016513144A patent/JP6028295B2/ja active Active
- 2014-05-29 BR BR112015028033A patent/BR112015028033A2/pt not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR101746325B1 (ko) | 2017-06-12 |
US20140362630A1 (en) | 2014-12-11 |
EP3008730B1 (en) | 2020-04-01 |
RU2636670C2 (ru) | 2017-11-27 |
WO2014200701A1 (en) | 2014-12-18 |
JP6028295B2 (ja) | 2016-11-16 |
RU2015148286A (ru) | 2017-05-15 |
JP2016517995A (ja) | 2016-06-20 |
US8964443B2 (en) | 2015-02-24 |
CN105190758B (zh) | 2018-07-03 |
KR20150133277A (ko) | 2015-11-27 |
EP3008730A1 (en) | 2016-04-20 |
EP3008730A4 (en) | 2017-02-15 |
CN105190758A (zh) | 2015-12-23 |
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B11B | Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements |