BR112013001584A2 - dispositivo de memória de acesso aleatório magnetico e método para produzir um dispositivo de memória de acesso aleatório magnetico - Google Patents
dispositivo de memória de acesso aleatório magnetico e método para produzir um dispositivo de memória de acesso aleatório magneticoInfo
- Publication number
- BR112013001584A2 BR112013001584A2 BR112013001584A BR112013001584A BR112013001584A2 BR 112013001584 A2 BR112013001584 A2 BR 112013001584A2 BR 112013001584 A BR112013001584 A BR 112013001584A BR 112013001584 A BR112013001584 A BR 112013001584A BR 112013001584 A2 BR112013001584 A2 BR 112013001584A2
- Authority
- BR
- Brazil
- Prior art keywords
- memory device
- random access
- access memory
- magnetic random
- producing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10168021 | 2010-06-30 | ||
| PCT/IB2011/052491 WO2012001555A1 (en) | 2010-06-30 | 2011-06-08 | Magnetic random access memory device and method for producing a magnetic random access memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BR112013001584A2 true BR112013001584A2 (pt) | 2016-05-10 |
| BR112013001584B1 BR112013001584B1 (pt) | 2020-04-22 |
Family
ID=44275918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112013001584A BR112013001584B1 (pt) | 2010-06-30 | 2011-06-08 | dispositivo de memória de acesso aleatório magnético e método para produzir um dispositivo de memória de acesso aleatório magnético |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8817531B2 (pt) |
| JP (1) | JP5759541B2 (pt) |
| CN (1) | CN102918649B (pt) |
| BR (1) | BR112013001584B1 (pt) |
| CA (1) | CA2785625C (pt) |
| DE (1) | DE112011101184B4 (pt) |
| GB (1) | GB2494361B (pt) |
| WO (1) | WO2012001555A1 (pt) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2494361B (en) | 2010-06-30 | 2014-01-01 | Ibm | Magnetic random access memory device and method for producing a magnetic random access memory device |
| US8711612B1 (en) * | 2010-12-03 | 2014-04-29 | Magsil Corporation | Memory circuit and method of forming the same using reduced mask steps |
| GB201117446D0 (en) * | 2011-10-10 | 2011-11-23 | Univ York | Method of pinning domain walls in a nanowire magnetic memory device |
| JP6093146B2 (ja) * | 2012-10-25 | 2017-03-08 | 株式会社東芝 | 磁性細線を有する磁気メモリおよびその書き込み方法 |
| CN106415522B (zh) * | 2014-05-08 | 2020-07-21 | 美光科技公司 | 存储器内轻量一致性 |
| WO2016209226A1 (en) * | 2015-06-24 | 2016-12-29 | Intel Corporation | Metallic spin super lattice for logic and memory devices |
| US10430618B2 (en) * | 2015-10-09 | 2019-10-01 | George Mason University | Vanishable logic to enhance circuit security |
| CN106898693A (zh) * | 2015-12-21 | 2017-06-27 | Imec 非营利协会 | 自旋转矩多栅极器件 |
| JP2018147916A (ja) * | 2017-03-01 | 2018-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 磁気記憶素子、磁気記憶装置、電子機器、および磁気記憶素子の製造方法 |
| US10217794B2 (en) | 2017-05-24 | 2019-02-26 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with vertical capacitors and methods for producing the same |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000195250A (ja) * | 1998-12-24 | 2000-07-14 | Toshiba Corp | 磁気メモリ装置 |
| JP2002299584A (ja) * | 2001-04-03 | 2002-10-11 | Mitsubishi Electric Corp | 磁気ランダムアクセスメモリ装置および半導体装置 |
| JP4405103B2 (ja) * | 2001-04-20 | 2010-01-27 | 株式会社東芝 | 半導体記憶装置 |
| US6801451B2 (en) * | 2002-09-03 | 2004-10-05 | Hewlett-Packard Development Company, L.P. | Magnetic memory devices having multiple bits per memory cell |
| JP4419408B2 (ja) * | 2003-03-14 | 2010-02-24 | Ｔｄｋ株式会社 | 磁気抵抗効果素子および磁気メモリデバイス |
| US6925003B2 (en) * | 2003-09-08 | 2005-08-02 | Hewlett-Packard Development Company, L.P. | Magnetic memory cell structure |
| JP2005317739A (ja) | 2004-04-28 | 2005-11-10 | Toshiba Corp | 磁気記憶装置およびその製造方法 |
| US20080007991A1 (en) * | 2004-05-27 | 2008-01-10 | Diteweg Anthonie Meindert H | Reversed Magnetic Tunneling Junction for Power Efficient Byte Writing of Mram |
| FR2879349B1 (fr) * | 2004-12-15 | 2007-05-11 | Thales Sa | Dispositif a electronique de spin a commande par deplacement de parois induit par un courant de porteurs polarises en spin |
| JP2006237329A (ja) | 2005-02-25 | 2006-09-07 | Toshiba Corp | 磁気記憶装置及び磁気記憶装置の書き込み方法 |
| US20100157662A1 (en) * | 2005-04-26 | 2010-06-24 | Teruo Ono | Mram and method for writing in mram |
| JP4533807B2 (ja) * | 2005-06-23 | 2010-09-01 | 株式会社東芝 | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
| JP2007324171A (ja) * | 2006-05-30 | 2007-12-13 | Fujitsu Ltd | 磁気メモリ装置及びその製造方法 |
| JP2007324276A (ja) * | 2006-05-31 | 2007-12-13 | Fujitsu Ltd | 磁気メモリ装置及びその製造方法 |
| JP4560025B2 (ja) * | 2006-09-29 | 2010-10-13 | 株式会社東芝 | 磁気ランダムアクセスメモリ及びその製造方法 |
| US20080094874A1 (en) * | 2006-10-23 | 2008-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-read resistance-variable memory cell structure and method of sensing a resistance thereof |
| US7881104B2 (en) * | 2008-08-08 | 2011-02-01 | Seagate Technology Llc | Magnetic memory with separate read and write paths |
| JP2010067791A (ja) * | 2008-09-10 | 2010-03-25 | Fujitsu Ltd | 磁性細線ユニット及び記憶装置 |
| GB2494361B (en) | 2010-06-30 | 2014-01-01 | Ibm | Magnetic random access memory device and method for producing a magnetic random access memory device |
-
2011
- 2011-06-08 GB GB1300264.7A patent/GB2494361B/en active Active
- 2011-06-08 JP JP2013517602A patent/JP5759541B2/ja active Active
- 2011-06-08 CA CA2785625A patent/CA2785625C/en active Active
- 2011-06-08 DE DE112011101184.9T patent/DE112011101184B4/de active Active
- 2011-06-08 CN CN201180025521.7A patent/CN102918649B/zh active Active
- 2011-06-08 WO PCT/IB2011/052491 patent/WO2012001555A1/en active Application Filing
- 2011-06-08 US US13/702,165 patent/US8817531B2/en active Active
- 2011-06-08 BR BR112013001584A patent/BR112013001584B1/pt active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| CN102918649B (zh) | 2015-12-16 |
| US8817531B2 (en) | 2014-08-26 |
| WO2012001555A1 (en) | 2012-01-05 |
| BR112013001584B1 (pt) | 2020-04-22 |
| JP2013537704A (ja) | 2013-10-03 |
| DE112011101184B4 (de) | 2019-11-28 |
| US20130208536A1 (en) | 2013-08-15 |
| DE112011101184T5 (de) | 2013-01-17 |
| CN102918649A (zh) | 2013-02-06 |
| GB2494361A (en) | 2013-03-06 |
| GB201300264D0 (en) | 2013-02-20 |
| CA2785625A1 (en) | 2012-01-05 |
| GB2494361B (en) | 2014-01-01 |
| CA2785625C (en) | 2018-05-29 |
| JP5759541B2 (ja) | 2015-08-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
| B06U | Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette] | ||
| B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
| B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 08/06/2011, OBSERVADAS AS CONDICOES LEGAIS. |