BR102012025930A2 - Montagem de supressor de tensão transiente - Google Patents

Montagem de supressor de tensão transiente Download PDF

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Publication number
BR102012025930A2
BR102012025930A2 BR102012025930-3A BR102012025930A BR102012025930A2 BR 102012025930 A2 BR102012025930 A2 BR 102012025930A2 BR 102012025930 A BR102012025930 A BR 102012025930A BR 102012025930 A2 BR102012025930 A2 BR 102012025930A2
Authority
BR
Brazil
Prior art keywords
layer
stt
conductivity
polarity
assembly
Prior art date
Application number
BR102012025930-3A
Other languages
English (en)
Portuguese (pt)
Inventor
Srikrishnan Kashyap Avinash
Mulford Shaddock David
Micah Sandvik Peter
Daley Arthur Pstephen
Tilak Vinayak
Original Assignee
General Electric Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Company filed Critical General Electric Company
Publication of BR102012025930A2 publication Critical patent/BR102012025930A2/pt

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/141—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being on at least the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Rectifiers (AREA)
BR102012025930-3A 2011-10-26 2012-10-10 Montagem de supressor de tensão transiente BR102012025930A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/281,638 2011-10-26
US13/281,638 US8530902B2 (en) 2011-10-26 2011-10-26 System for transient voltage suppressors

Publications (1)

Publication Number Publication Date
BR102012025930A2 true BR102012025930A2 (pt) 2014-03-18

Family

ID=47471463

Family Applications (1)

Application Number Title Priority Date Filing Date
BR102012025930-3A BR102012025930A2 (pt) 2011-10-26 2012-10-10 Montagem de supressor de tensão transiente

Country Status (6)

Country Link
US (2) US8530902B2 (https=)
EP (1) EP2587543A3 (https=)
JP (1) JP2013093574A (https=)
CN (1) CN103077938B (https=)
BR (1) BR102012025930A2 (https=)
CA (1) CA2792591A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8835976B2 (en) * 2012-03-14 2014-09-16 General Electric Company Method and system for ultra miniaturized packages for transient voltage suppressors
US9042072B2 (en) * 2012-03-30 2015-05-26 General Electric Company Method and system for lightning protection with distributed transient voltage suppression
US8987858B2 (en) * 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
US9111750B2 (en) * 2013-06-28 2015-08-18 General Electric Company Over-voltage protection of gallium nitride semiconductor devices
US9997507B2 (en) * 2013-07-25 2018-06-12 General Electric Company Semiconductor assembly and method of manufacture
US9508841B2 (en) 2013-08-01 2016-11-29 General Electric Company Method and system for a semiconductor device with integrated transient voltage suppression
US10103540B2 (en) * 2014-04-24 2018-10-16 General Electric Company Method and system for transient voltage suppression devices with active control
CN105321876A (zh) * 2014-07-28 2016-02-10 哈尔滨工大华生电子有限公司 一种集成esd防护功能的高频共模lc滤波设计方法
US9806157B2 (en) * 2014-10-03 2017-10-31 General Electric Company Structure and method for transient voltage suppression devices with a two-region base
WO2016159962A1 (en) * 2015-03-31 2016-10-06 Vishay General Semiconductor Llc Thin bi-directional transient voltage suppressor (tvs) or zener diode
CN109616407A (zh) * 2018-12-12 2019-04-12 中国人民解放军军事科学院国防工程研究院 高功率电磁脉冲防护的SiC-TVS器件的制备方法
US11482851B2 (en) * 2020-10-14 2022-10-25 Eaton Intelligent Power Limited Arc flash mitigation device
CN115632070B (zh) * 2022-10-14 2025-12-05 西安电子科技大学芜湖研究院 一种钳位电压可选的多台阶肖特基接触SiC-TVS器件及制备方法
CN115632071B (zh) * 2022-10-27 2025-12-05 西安电子科技大学芜湖研究院 一种多台阶的钳位电压可选的SiC-TVS器件及制备方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3398334A (en) * 1964-11-23 1968-08-20 Itt Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions
JPS5772389A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Constant-voltage diode
JPS58173249U (ja) * 1982-05-12 1983-11-19 日本電気株式会社 高圧ダイオ−ド
JPS6193258A (ja) * 1984-10-09 1986-05-12 ユナイテツド・テクノロジ−ズ・コ−ポレイシヨン 航空機用ガスタ−ビンエンジン及びその運転方法
JPH0756895B2 (ja) * 1988-03-14 1995-06-14 株式会社東芝 メサ型半導体基体
US5245412A (en) * 1992-02-18 1993-09-14 Square D Company Low capacitance silicon transient suppressor with monolithic structure
JP3315541B2 (ja) * 1994-11-04 2002-08-19 新日本無線株式会社 ＳｉＣへの電極の形成方法
US5880511A (en) 1995-06-30 1999-03-09 Semtech Corporation Low-voltage punch-through transient suppressor employing a dual-base structure
USRE38608E1 (en) 1995-06-30 2004-10-05 Semtech Corporation Low-voltage punch-through transient suppressor employing a dual-base structure
JPH0922922A (ja) * 1995-07-04 1997-01-21 Mitsubishi Materials Corp ＳｉＣ上のＰｔ電極への配線構造
JP3955396B2 (ja) * 1998-09-17 2007-08-08 株式会社ルネサステクノロジ 半導体サージ吸収素子
WO2000042662A1 (de) * 1999-01-12 2000-07-20 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Leistungshalbleiterbauelement mit mesa-randabschluss
FR2815472B1 (fr) * 2000-10-13 2003-03-21 St Microelectronics Sa Diac planar
US6633063B2 (en) * 2001-05-04 2003-10-14 Semiconductor Components Industries Llc Low voltage transient voltage suppressor and method of making
US6489660B1 (en) * 2001-05-22 2002-12-03 General Semiconductor, Inc. Low-voltage punch-through bi-directional transient-voltage suppression devices
JP2002373992A (ja) * 2001-06-15 2002-12-26 Hitachi Ltd 双方向定電圧ダイオード又はその製造方法
JP3891092B2 (ja) 2001-10-23 2007-03-07 ヤマハ株式会社 ステアリングホイール
US6689669B2 (en) 2001-11-03 2004-02-10 Kulite Semiconductor Products, Inc. High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane
US7532445B2 (en) 2001-12-14 2009-05-12 Stmicroelectronics Asia Pacific Pte Ltd. Transient voltage clamping circuit
US6867436B1 (en) 2003-08-05 2005-03-15 Protek Devices, Lp Transient voltage suppression device
US7355300B2 (en) * 2004-06-15 2008-04-08 Woodward Governor Company Solid state turbine engine ignition exciter having elevated temperature operational capability
US7391057B2 (en) 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7586156B2 (en) * 2006-07-26 2009-09-08 Fairchild Semiconductor Corporation Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device
US7668295B2 (en) 2007-05-14 2010-02-23 General Electric Co. System and method for high voltage transient suppression and spit protection in an x-ray tube
US20090015978A1 (en) 2007-07-12 2009-01-15 Clark O Melville Non-inductive silicon transient voltage suppressor
US20090115018A1 (en) 2007-11-01 2009-05-07 Alpha & Omega Semiconductor, Ltd Transient voltage suppressor manufactured in silicon on oxide (SOI) layer
US8093133B2 (en) 2008-04-04 2012-01-10 Semiconductor Components Industries, Llc Transient voltage suppressor and methods
JP2009267032A (ja) * 2008-04-24 2009-11-12 Toyota Motor Corp 半導体装置とその製造方法
US8445917B2 (en) 2009-03-20 2013-05-21 Cree, Inc. Bidirectional silicon carbide transient voltage suppression devices
US8288839B2 (en) * 2009-04-30 2012-10-16 Alpha & Omega Semiconductor, Inc. Transient voltage suppressor having symmetrical breakdown voltages
US8164876B2 (en) 2009-09-04 2012-04-24 Osram Sylvania Inc. Transient voltage protection circuit and system incorporating the same

Also Published As

Publication number Publication date
US8530902B2 (en) 2013-09-10
EP2587543A3 (en) 2014-04-09
EP2587543A2 (en) 2013-05-01
US8765524B2 (en) 2014-07-01
US20130105816A1 (en) 2013-05-02
JP2013093574A (ja) 2013-05-16
CN103077938A (zh) 2013-05-01
CA2792591A1 (en) 2013-04-26
CN103077938B (zh) 2017-12-08
US20130328064A1 (en) 2013-12-12

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Legal Events

Date Code Title Description
B03A Publication of a patent application or of a certificate of addition of invention [chapter 3.1 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2483 DE 07-08-2018 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.