BR0312652A - Composição de resina foto-curavel termo-estavel para resistor de filme seco - Google Patents

Composição de resina foto-curavel termo-estavel para resistor de filme seco

Info

Publication number
BR0312652A
BR0312652A BR0312652-8A BR0312652A BR0312652A BR 0312652 A BR0312652 A BR 0312652A BR 0312652 A BR0312652 A BR 0312652A BR 0312652 A BR0312652 A BR 0312652A
Authority
BR
Brazil
Prior art keywords
weight
alkyl
dry film
film resistor
resin composition
Prior art date
Application number
BR0312652-8A
Other languages
English (en)
Inventor
Oka Hidetaka
James Philip Taylor
Masaki Ohwa
Original Assignee
Ciba Sc Holding Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ciba Sc Holding Ag filed Critical Ciba Sc Holding Ag
Publication of BR0312652A publication Critical patent/BR0312652A/pt

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

"COMPOSIçãO DE RESINA FOTO-CURáVEL TERMO-ESTáVEL PARA RESISTOR DE FILME SECO". A presente invenção refere-se a um processo para preparação de um resistor de filme seco através de formação de uma composição de resina foto-curável sobre um filme suporte com uma espessura de 1 a 50 <109>m e opcionalmente laminando um filme protetor sobre a camada de composição foto-curável para obter um resistor de filme seco; pelo que a resina fotocurável é formada a partir de uma mistura homogênea compreendendo (a) de 20-90% em peso de um oligómero ou polímero ligante solúvel em alcalino; (b) de 5 a 60% em peso de um ou mais monómeros fotopolimerizáveis que são compatíveis com os oligómeros e polímeros de componente (a); (c) de 0,01 a 20% em peso de um ou mais fotoiniciadores; (d) de O a 20% em peso de aditivos e/ou auxiliares; e (e) de 0,1 a 10% em peso de um corante trifenil metano leuco da fórmula I onde R^ 1^ é um resíduo selecionado de R^ 2^ é alquila C~ 1-12~ ou fenila que pode estar mono-, di- ou trissubstituído com alquila C~ 1-6~, triflúor metila, alcóxi C~ 1-6~, alquil tio C~ 1-6~, halogênio e nitro; R^ 3^ é hidrogênio ou alquila C~ 1-12~; R~ 4^ a R^ 9^ independentemente um do outro são hidrogênio ou alquila C~ 1-12~; x é 0, S, NH ou N-alquila C~ 1-12~; (a) a (e) sendo 100% em peso. A composição acima é útil para evitar desfavorável geração de cor durante a laminação quente.
BR0312652-8A 2002-07-10 2003-07-01 Composição de resina foto-curavel termo-estavel para resistor de filme seco BR0312652A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02405581 2002-07-10
PCT/EP2003/006954 WO2004008251A1 (en) 2002-07-10 2003-07-01 Heat stable photocurable resin composition for dry film resist

Publications (1)

Publication Number Publication Date
BR0312652A true BR0312652A (pt) 2005-04-26

Family

ID=30011298

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0312652-8A BR0312652A (pt) 2002-07-10 2003-07-01 Composição de resina foto-curavel termo-estavel para resistor de filme seco

Country Status (11)

Country Link
US (1) US7198884B2 (pt)
EP (1) EP1520209A1 (pt)
JP (1) JP2005532595A (pt)
KR (1) KR20050025324A (pt)
CN (1) CN1666149A (pt)
AU (1) AU2003250865A1 (pt)
BR (1) BR0312652A (pt)
CA (1) CA2491678A1 (pt)
MX (1) MXPA05000439A (pt)
TW (1) TWI279645B (pt)
WO (1) WO2004008251A1 (pt)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060144270A1 (en) * 2005-01-04 2006-07-06 Prakash Seth Photothermally sensitive compositions and system for CTP imaging processes
US8796583B2 (en) * 2004-09-17 2014-08-05 Eastman Kodak Company Method of forming a structured surface using ablatable radiation sensitive material
JP4761923B2 (ja) * 2005-10-20 2011-08-31 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及び積層体
JP4668111B2 (ja) * 2005-12-26 2011-04-13 富士フイルム株式会社 重合性組成物及びそれを用いた平版印刷版原版
US20090191491A1 (en) * 2008-01-28 2009-07-30 John Ganjei Method of Creating an Image in a Photoresist Laminate
US7772355B2 (en) 2008-01-28 2010-08-10 The United States Of America As Represented By The Secretary Of The Navy Divinylsilane-terminated aromatic ether-aromatic ketone-containing compounds
KR100913058B1 (ko) * 2008-08-25 2009-08-20 금호석유화학 주식회사 포지티브형 감광성 수지 조성물, 패턴 형성 방법 및 반도체소자
WO2014181533A1 (en) 2013-05-09 2014-11-13 Canon Kabushiki Kaisha Compound, photocurable composition, and methods for producing patterned film, optical component, circuit board, electronic component by using the photocurable composition, and cured product
US9085692B1 (en) 2014-02-25 2015-07-21 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Synthesis of oligomeric divinyldialkylsilane containing compositions
WO2017057584A1 (ja) * 2015-09-30 2017-04-06 富士フイルム株式会社 静電容量型入力装置の電極保護膜用の組成物、静電容量型入力装置の電極保護膜、転写フィルム、積層体、静電容量型入力装置および画像表示装置。
US9944816B2 (en) * 2016-06-02 2018-04-17 Ppg Coatings Europe B.V. Crosslinkable binders for solvent based intumescent coatings
CN108255014B (zh) * 2017-12-11 2019-07-02 珠海市能动科技光学产业有限公司 一种含有改性聚氨酯和光固化单体的干膜光阻剂
CN112099312A (zh) * 2020-10-19 2020-12-18 河源诚展科技有限公司 一种光致抗蚀干膜及其制备方法
KR102646265B1 (ko) * 2021-01-13 2024-03-08 코오롱인더스트리 주식회사 감광성 수지 조성물 및 이를 이용한 드라이 필름 포토레지스트, 감광성 엘리먼트, 레지스터 패턴, 회로기판, 및 디스플레이 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
LU76074A1 (pt) 1976-10-26 1978-05-16
JPS6057340A (ja) 1983-09-08 1985-04-03 Fuji Photo Film Co Ltd 焼出し性組成物
DE3447357A1 (de) * 1984-12-24 1986-07-03 Basf Ag, 6700 Ludwigshafen Trockenfilmresist und verfahren zur herstellung von resistmustern

Also Published As

Publication number Publication date
KR20050025324A (ko) 2005-03-14
CA2491678A1 (en) 2004-01-22
AU2003250865A1 (en) 2004-02-02
JP2005532595A (ja) 2005-10-27
US7198884B2 (en) 2007-04-03
TWI279645B (en) 2007-04-21
MXPA05000439A (es) 2005-03-23
WO2004008251A1 (en) 2004-01-22
TW200415442A (en) 2004-08-16
EP1520209A1 (en) 2005-04-06
US20050260520A1 (en) 2005-11-24
CN1666149A (zh) 2005-09-07

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Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]