BR0205192A - Camadas semicondutoras escalonadas para reduzir voltagem limite para uma estrutura de diodo a laser à base de nitreto - Google Patents
Camadas semicondutoras escalonadas para reduzir voltagem limite para uma estrutura de diodo a laser à base de nitretoInfo
- Publication number
- BR0205192A BR0205192A BR0205192-3A BR0205192A BR0205192A BR 0205192 A BR0205192 A BR 0205192A BR 0205192 A BR0205192 A BR 0205192A BR 0205192 A BR0205192 A BR 0205192A
- Authority
- BR
- Brazil
- Prior art keywords
- stepped
- nitride
- semiconductor layers
- laser diode
- diode structure
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Abstract
"CAMADAS SEMICONDUTORAS ESCALONADAS PARA REDUZIR VOLTAGEM LIMITE PARA UMA ESTRUTURA DE DIODO A LASER à BASE DE NITRETO". A invenção refere-se a camadas semicondutoras escalonadas entre as camadas de GaN e AlGaN, em uma estrutura a laser semicondutor à base de nitreto, reduzem a voltagem limite da estrutura a laser, por redução da barreira de potencial elétrico entre as camadas de GaN e AlGaN. As camadas escalonadas podem ser escalonadas em degraus, escalonadas contínuas ou escalonadas digitais.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/024,239 US6618413B2 (en) | 2001-12-21 | 2001-12-21 | Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure |
Publications (1)
Publication Number | Publication Date |
---|---|
BR0205192A true BR0205192A (pt) | 2004-06-29 |
Family
ID=21819568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR0205192-3A BR0205192A (pt) | 2001-12-21 | 2002-12-19 | Camadas semicondutoras escalonadas para reduzir voltagem limite para uma estrutura de diodo a laser à base de nitreto |
Country Status (5)
Country | Link |
---|---|
US (1) | US6618413B2 (pt) |
EP (1) | EP1328025B1 (pt) |
JP (1) | JP2003218454A (pt) |
BR (1) | BR0205192A (pt) |
DE (1) | DE60227232D1 (pt) |
Families Citing this family (39)
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US7692182B2 (en) * | 2001-05-30 | 2010-04-06 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
JP3860494B2 (ja) * | 2002-03-13 | 2006-12-20 | 富士通株式会社 | 面発光レーザおよびその製造方法 |
US7123637B2 (en) * | 2003-03-20 | 2006-10-17 | Xerox Corporation | Nitride-based laser diode with GaN waveguide/cladding layer |
US7176498B2 (en) * | 2003-08-06 | 2007-02-13 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Terahertz radiating device based on semiconductor coupled quantum wells |
US7485476B2 (en) * | 2003-08-06 | 2009-02-03 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Terahertz radiating device based on semiconductor coupled quantum wells |
KR101028276B1 (ko) | 2004-06-07 | 2011-04-11 | 엘지이노텍 주식회사 | 반도체 레이저 다이오드 및 그 제조방법 |
US7326963B2 (en) * | 2004-12-06 | 2008-02-05 | Sensor Electronic Technology, Inc. | Nitride-based light emitting heterostructure |
KR100653652B1 (ko) * | 2004-12-16 | 2006-12-05 | 한국전자통신연구원 | 광 반도체 소자 |
KR100850950B1 (ko) * | 2006-07-26 | 2008-08-08 | 엘지전자 주식회사 | 질화물계 발광 소자 |
PL1883119T3 (pl) * | 2006-07-27 | 2016-04-29 | Osram Opto Semiconductors Gmbh | Półprzewodnikowa struktura warstwowa z supersiecią |
EP1883140B1 (de) * | 2006-07-27 | 2013-02-27 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten |
EP1883141B1 (de) * | 2006-07-27 | 2017-05-24 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht |
DE102006046228A1 (de) * | 2006-07-27 | 2008-01-31 | Osram Opto Semiconductors Gmbh | Halbleiter-Schichtstruktur mit Übergitter |
US7714340B2 (en) | 2006-09-06 | 2010-05-11 | Palo Alto Research Center Incorporated | Nitride light-emitting device |
US7872272B2 (en) * | 2006-09-06 | 2011-01-18 | Palo Alto Research Center Incorporated | Nitride semiconductor ultraviolet LEDs with tunnel junctions and reflective contact |
DE102007023878A1 (de) * | 2007-05-23 | 2008-11-27 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
KR101438808B1 (ko) * | 2007-10-08 | 2014-09-05 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
DE102007057674A1 (de) * | 2007-11-30 | 2009-06-04 | Osram Opto Semiconductors Gmbh | LED mit Stromaufweitungsschicht |
DE102009015569B9 (de) * | 2009-03-30 | 2023-06-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
US8604461B2 (en) * | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
JP6018360B2 (ja) * | 2010-12-02 | 2016-11-02 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US10134948B2 (en) | 2011-02-25 | 2018-11-20 | Sensor Electronic Technology, Inc. | Light emitting diode with polarization control |
CN102299482B (zh) * | 2011-07-25 | 2013-06-19 | 苏州纳睿光电有限公司 | 氮化镓基半导体激光器外延结构及其制作方法 |
KR20140019635A (ko) * | 2012-08-06 | 2014-02-17 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
US9082637B2 (en) | 2012-08-17 | 2015-07-14 | The University Of Connecticut | Optoelectronic integrated circuit |
US20160005919A1 (en) * | 2013-02-05 | 2016-01-07 | Tokuyama Corporation | Nitride semiconductor light emitting device |
JP6275817B2 (ja) * | 2013-03-15 | 2018-02-07 | クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. | 仮像電子及び光学電子装置に対する平面コンタクト |
CN103337568B (zh) * | 2013-05-22 | 2016-01-20 | 西安交通大学 | 应变超晶格隧道结紫外led外延结构及其制备方法 |
CN104916745A (zh) * | 2015-06-29 | 2015-09-16 | 聚灿光电科技股份有限公司 | GaN基LED外延结构及其制备方法 |
EP3350844B1 (en) | 2015-09-17 | 2021-10-27 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating two-dimensional hole gases |
CN107180899B (zh) * | 2017-07-21 | 2023-11-14 | 广东工业大学 | 一种深紫外led |
DE102017119931A1 (de) * | 2017-08-30 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
CN108231960B (zh) * | 2018-01-05 | 2023-10-27 | 广东省半导体产业技术研究院 | 一种提高光效的AlGaN基半导体紫外器件及其制备方法 |
WO2019193487A1 (en) * | 2018-04-06 | 2019-10-10 | Silanna UV Technologies Pte Ltd | Semiconductor structure with chirp layer |
US11552217B2 (en) * | 2018-11-12 | 2023-01-10 | Epistar Corporation | Semiconductor device |
US11769780B2 (en) * | 2020-02-26 | 2023-09-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensors with stress adjusting layers |
CN114142344B (zh) * | 2021-11-19 | 2023-11-17 | 北京大学 | 一种提高蓝、绿光半导体激光器电学特性的方法及器件 |
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US5170407A (en) * | 1991-10-11 | 1992-12-08 | At&T Bell Laboratories | Elimination of heterojunction band discontinuities |
US5530715A (en) | 1994-11-29 | 1996-06-25 | Motorola, Inc. | Vertical cavity surface emitting laser having continuous grading |
JPH1079530A (ja) * | 1996-07-08 | 1998-03-24 | Toshiba Corp | 窒化ガリウム系化合物半導体発光素子 |
US5898721A (en) | 1997-02-14 | 1999-04-27 | Opto Power Corporation | InGaAsP/AlGaAs/GaAs hetero structure diode laser containing indium |
JP3279266B2 (ja) * | 1998-09-11 | 2002-04-30 | 日本電気株式会社 | 窒化ガリウム系半導体発光素子 |
JP2000091708A (ja) * | 1998-09-14 | 2000-03-31 | Toshiba Corp | 半導体発光素子 |
JP2000244070A (ja) * | 1999-02-19 | 2000-09-08 | Sony Corp | 半導体装置および半導体発光素子 |
JP4850324B2 (ja) * | 1999-07-16 | 2012-01-11 | アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド | 窒化物半導体素子および窒化物半導体レーザ素子 |
US6535536B2 (en) * | 2000-04-10 | 2003-03-18 | Fuji Photo Film Co., Ltd. | Semiconductor laser element |
-
2001
- 2001-12-21 US US10/024,239 patent/US6618413B2/en not_active Expired - Lifetime
-
2002
- 2002-12-17 DE DE60227232T patent/DE60227232D1/de not_active Expired - Lifetime
- 2002-12-17 EP EP02258688A patent/EP1328025B1/en not_active Expired - Lifetime
- 2002-12-19 BR BR0205192-3A patent/BR0205192A/pt not_active Application Discontinuation
- 2002-12-20 JP JP2002369168A patent/JP2003218454A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1328025A2 (en) | 2003-07-16 |
DE60227232D1 (de) | 2008-08-07 |
JP2003218454A (ja) | 2003-07-31 |
EP1328025A3 (en) | 2004-12-22 |
US6618413B2 (en) | 2003-09-09 |
US20030118066A1 (en) | 2003-06-26 |
EP1328025B1 (en) | 2008-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
B09B | Patent application refused [chapter 9.2 patent gazette] |
Free format text: INDEFIRO O PEDIDO DE ACORDO COM ART. 8O COMBINADO COM ART. 13 DA LPI |
|
B12B | Appeal against refusal [chapter 12.2 patent gazette] | ||
B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 16A ANUIDADE. |