BR0006785A - Transistor sic nmosfet para uso como interruptor de força e método para sua fabricação - Google Patents

Transistor sic nmosfet para uso como interruptor de força e método para sua fabricação

Info

Publication number
BR0006785A
BR0006785A BR0006785-7A BR0006785A BR0006785A BR 0006785 A BR0006785 A BR 0006785A BR 0006785 A BR0006785 A BR 0006785A BR 0006785 A BR0006785 A BR 0006785A
Authority
BR
Brazil
Prior art keywords
mosfet
silicon carbide
sic
manufacture
power switch
Prior art date
Application number
BR0006785-7A
Other languages
English (en)
Inventor
Jian Tan
Ashraf Wagih Lotfi
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of BR0006785A publication Critical patent/BR0006785A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

<B>TRANSISTOR SIC NMOSFET PARA USO COMO INTERRUPTOR DE FORçA E MéTODO PARA SUA FABRICAçãO<D> Transistor de efeito de campo de semicondutor de óxido metálico lateral (MOSFET) formado sobre o substrato de uma pastilha semicondutora, método para sua fabricação e dispositivo semicondutor incorporando o MOSFET ou o método. Numa modalidade, o MOSFET inclui uma camada de carbureto de silício localizada sobre ou dentro do substrato, uma porta formada sobre a camada de carbureto de silício. O MOSFET inclui, ainda, regiões de fonte e dreno localizadas na camada de carbureto de silício e em contato com a porta, sendo que a camada de carbureto de silício aumenta a tensão de ruptura do MOSFET.
BR0006785-7A 1999-11-23 2000-11-13 Transistor sic nmosfet para uso como interruptor de força e método para sua fabricação BR0006785A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/448,856 US6903373B1 (en) 1999-11-23 1999-11-23 SiC MOSFET for use as a power switch and a method of manufacturing the same

Publications (1)

Publication Number Publication Date
BR0006785A true BR0006785A (pt) 2001-09-04

Family

ID=23781925

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0006785-7A BR0006785A (pt) 1999-11-23 2000-11-13 Transistor sic nmosfet para uso como interruptor de força e método para sua fabricação

Country Status (7)

Country Link
US (1) US6903373B1 (pt)
EP (1) EP1104028B1 (pt)
JP (1) JP3955434B2 (pt)
KR (1) KR100774112B1 (pt)
CN (1) CN1297258A (pt)
BR (1) BR0006785A (pt)
DE (1) DE60043646D1 (pt)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2837322B1 (fr) * 2002-03-14 2005-02-04 Commissariat Energie Atomique DIODE SCHOTTKY DE PUISSANCE A SUBSTRAT SiCOI, ET PROCEDE DE REALISATION D'UN TELLE DIODE
US7391133B1 (en) * 2002-09-28 2008-06-24 Hennessy Michael J Hybrid switch
CN1302558C (zh) * 2003-03-06 2007-02-28 北京大学 一种场效应晶体管
US7598134B2 (en) 2004-07-28 2009-10-06 Micron Technology, Inc. Memory device forming methods
US7598576B2 (en) 2005-06-29 2009-10-06 Cree, Inc. Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
US8114693B1 (en) * 2007-09-18 2012-02-14 Partial Assignment University of Central Florida Method of fabricating solid state gas dissociating device by laser doping
JP6278591B2 (ja) * 2012-11-13 2018-02-14 株式会社Sumco 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法
US9257407B2 (en) * 2013-10-28 2016-02-09 Qualcomm Incorporated Heterogeneous channel material integration into wafer
US10060966B2 (en) * 2015-03-24 2018-08-28 Intel Corporation Method and apparatus for enhancing guardbands using “in-situ” silicon measurements
US10243039B2 (en) 2016-03-22 2019-03-26 General Electric Company Super-junction semiconductor power devices with fast switching capability
JP6889048B2 (ja) * 2017-06-30 2021-06-18 株式会社日立製作所 炭化ケイ素半導体装置およびその製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441146A (en) 1982-02-04 1984-04-03 Vicor Corporation Optimal resetting of the transformer's core in single ended forward converters
JPS6414949A (en) * 1987-07-08 1989-01-19 Nec Corp Semiconductor device and manufacture of the same
JPH067594B2 (ja) * 1987-11-20 1994-01-26 富士通株式会社 半導体基板の製造方法
US5135885A (en) 1989-03-27 1992-08-04 Sharp Corporation Method of manufacturing silicon carbide fets
JPH0766971B2 (ja) 1989-06-07 1995-07-19 シャープ株式会社 炭化珪素半導体装置
JP2542448B2 (ja) * 1990-05-24 1996-10-09 シャープ株式会社 電界効果トランジスタおよびその製造方法
US5173846A (en) 1991-03-13 1992-12-22 Astec International Ltd. Zero voltage switching power converter
JPH0529621A (ja) * 1991-07-19 1993-02-05 Rohm Co Ltd 炭化珪素薄膜回路素子とその製造方法
JP3058954B2 (ja) * 1991-09-24 2000-07-04 ローム株式会社 絶縁層の上に成長層を有する半導体装置の製造方法
WO1993024987A1 (en) 1992-06-02 1993-12-09 Astec International Limited Dual active clamp power converter
US6344663B1 (en) 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
US5303138A (en) 1993-04-29 1994-04-12 At&T Bell Laboratories Low loss synchronous rectifier for application to clamped-mode power converters
JPH07254706A (ja) * 1993-11-29 1995-10-03 Texas Instr Inc <Ti> 高電圧デバイス構造およびその製造方法
US5489792A (en) * 1994-04-07 1996-02-06 Regents Of The University Of California Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
US5672889A (en) * 1995-03-15 1997-09-30 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making
US5661312A (en) * 1995-03-30 1997-08-26 Motorola Silicon carbide MOSFET
JP3724026B2 (ja) * 1995-04-24 2005-12-07 株式会社デンソー 車両用同期発電装置及びその励磁制御方法
US5574295A (en) 1995-08-09 1996-11-12 Kulite Semiconductor Products Dielectrically isolated SiC mosfet
DE19612692C1 (de) 1996-03-29 1997-11-20 Siemens Ag Verfahren zum Erzeugen einer Oxidschicht auf Siliciumcarbid und Verwendung des Verfahrens
SE9700215L (sv) 1997-01-27 1998-02-18 Abb Research Ltd Förfarande för framställning av ett halvledarskikt av SiC av 3C-polytypen ovanpå ett halvledarsubstratskikt utnyttjas wafer-bindningstekniken

Also Published As

Publication number Publication date
JP2001196584A (ja) 2001-07-19
KR20010051900A (ko) 2001-06-25
US6903373B1 (en) 2005-06-07
EP1104028A3 (en) 2001-08-22
KR100774112B1 (ko) 2007-11-07
DE60043646D1 (de) 2010-02-25
EP1104028A2 (en) 2001-05-30
CN1297258A (zh) 2001-05-30
EP1104028B1 (en) 2010-01-06
JP3955434B2 (ja) 2007-08-08

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Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal acc. article 33 of ipl - extension of time limit for request of examination expired