BG64069B1 - Полупроводников конструктивен елемент, по-специално елемент за слънчева батерия, както и метод за неговото производство - Google Patents
Полупроводников конструктивен елемент, по-специално елемент за слънчева батерия, както и метод за неговото производство Download PDFInfo
- Publication number
- BG64069B1 BG64069B1 BG103706A BG10370699A BG64069B1 BG 64069 B1 BG64069 B1 BG 64069B1 BG 103706 A BG103706 A BG 103706A BG 10370699 A BG10370699 A BG 10370699A BG 64069 B1 BG64069 B1 BG 64069B1
- Authority
- BG
- Bulgaria
- Prior art keywords
- pyrite
- semiconductor
- structural element
- boron
- phosphorus
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 28
- 239000007787 solid Substances 0.000 title abstract description 4
- 239000000463 material Substances 0.000 claims abstract description 49
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052796 boron Inorganic materials 0.000 claims abstract description 23
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 23
- 239000011574 phosphorus Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims description 82
- 229910052683 pyrite Inorganic materials 0.000 claims description 56
- NIFIFKQPDTWWGU-UHFFFAOYSA-N pyrite Chemical compound [Fe+2].[S-][S-] NIFIFKQPDTWWGU-UHFFFAOYSA-N 0.000 claims description 55
- 239000011028 pyrite Substances 0.000 claims description 54
- 239000010410 layer Substances 0.000 claims description 42
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 7
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 6
- 238000000746 purification Methods 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- -1 pyrite compound Chemical class 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 210000001198 duodenum Anatomy 0.000 claims 1
- 238000001027 hydrothermal synthesis Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 238000005118 spray pyrolysis Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 8
- 230000007704 transition Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000005445 natural material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910014265 BrCl Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 102000005298 Iron-Sulfur Proteins Human genes 0.000 description 1
- 108010081409 Iron-Sulfur Proteins Proteins 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- AZOWAFFTOUGEDU-UHFFFAOYSA-N [Ar].[S] Chemical compound [Ar].[S] AZOWAFFTOUGEDU-UHFFFAOYSA-N 0.000 description 1
- 238000005263 ab initio calculation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- AQLMHYSWFMLWBS-UHFFFAOYSA-N arsenite(1-) Chemical compound O[As](O)[O-] AQLMHYSWFMLWBS-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- CODNYICXDISAEA-UHFFFAOYSA-N bromine monochloride Chemical compound BrCl CODNYICXDISAEA-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000097 high energy electron diffraction Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98810382A EP0954033A1 (de) | 1998-04-29 | 1998-04-29 | Halbleiterbauelement, insbesondere eine Solarzelle, mit einer Schicht aus Pyrit, sowie Verfahren zu dessen Herstellung |
| PCT/CH1998/000455 WO1999056325A1 (de) | 1998-04-29 | 1998-10-23 | Halbleiterbauelement, insbesondere eine solarzelle, sowie verfahren zu dessen herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BG103706A BG103706A (en) | 2000-05-31 |
| BG64069B1 true BG64069B1 (bg) | 2003-11-28 |
Family
ID=8236060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BG103706A BG64069B1 (bg) | 1998-04-29 | 1999-09-01 | Полупроводников конструктивен елемент, по-специално елемент за слънчева батерия, както и метод за неговото производство |
Country Status (26)
| Country | Link |
|---|---|
| US (1) | US6635942B2 (pl) |
| EP (2) | EP0954033A1 (pl) |
| JP (1) | JP3874429B2 (pl) |
| KR (1) | KR100613524B1 (pl) |
| CN (1) | CN1218405C (pl) |
| AR (1) | AR019111A1 (pl) |
| AT (1) | ATE287576T1 (pl) |
| AU (1) | AU756671B2 (pl) |
| BG (1) | BG64069B1 (pl) |
| BR (1) | BR9808074B1 (pl) |
| CA (1) | CA2275298C (pl) |
| CZ (1) | CZ298589B6 (pl) |
| DE (1) | DE59812504D1 (pl) |
| DK (1) | DK1032949T3 (pl) |
| ES (1) | ES2239406T3 (pl) |
| HU (1) | HU227655B1 (pl) |
| IL (1) | IL131534A (pl) |
| MY (1) | MY124379A (pl) |
| NO (1) | NO993552L (pl) |
| NZ (1) | NZ336848A (pl) |
| PL (1) | PL192742B1 (pl) |
| PT (1) | PT1032949E (pl) |
| RU (1) | RU2219620C2 (pl) |
| TR (1) | TR199903266T1 (pl) |
| TW (1) | TW434915B (pl) |
| WO (1) | WO1999056325A1 (pl) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300375C (zh) * | 2004-12-07 | 2007-02-14 | 浙江大学 | 电沉积氧化及热硫化合成二硫化铁薄膜的方法 |
| US8093684B2 (en) * | 2006-01-16 | 2012-01-10 | Sharp Kabushiki Kaisha | Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same |
| JP4938314B2 (ja) * | 2006-01-16 | 2012-05-23 | シャープ株式会社 | 光電変換装置および半導体接合素子の製造方法 |
| US20110240108A1 (en) * | 2010-04-02 | 2011-10-06 | Matt Law | Method To Synthesize Colloidal Iron Pyrite (FeS2) Nanocrystals And Fabricate Iron Pyrite Thin Film Solar Cells |
| US10680125B2 (en) * | 2011-11-15 | 2020-06-09 | Nutech Ventures | Iron pyrite nanocrystals |
| JP5377732B2 (ja) * | 2012-09-14 | 2013-12-25 | シャープ株式会社 | 半導体、ｐ型半導体、半導体接合素子、ｐｎ接合素子、および光電変換装置 |
| US10790144B2 (en) | 2013-06-24 | 2020-09-29 | Arizona Board Of Regents On Behalf Of Arizona State University | Method to produce pyrite |
| US9705012B2 (en) * | 2014-03-18 | 2017-07-11 | The United States Of America, As Represented By The Secretary Of The Navy | Method of passivating an iron disulfide surface via encapsulation in zinc sulfide |
| US10181598B2 (en) | 2015-01-05 | 2019-01-15 | University Of Florida Resarch Foundation, Inc. | Lithium ion battery cathodes, methods of making, and methods of use thereof |
| CN105140338B (zh) * | 2015-07-29 | 2017-07-04 | 云南师范大学 | 一种低成本FeS2薄膜太阳电池的制备方法 |
| EP3418719A1 (en) | 2017-06-23 | 2018-12-26 | Cellix Limited | System and method for improved identification of particles or cells |
| EP3418721A1 (en) | 2017-06-23 | 2018-12-26 | Cellix Limited | A microfluidic chip |
| EP3418717A1 (en) | 2017-06-23 | 2018-12-26 | Cellix Limited | A microfluidic apparatus for separation of particulates in a fluid |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852563A (en) * | 1974-02-01 | 1974-12-03 | Hewlett Packard Co | Thermal printing head |
| US4131486A (en) * | 1977-01-19 | 1978-12-26 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Back wall solar cell |
| US4710786A (en) * | 1978-03-16 | 1987-12-01 | Ovshinsky Stanford R | Wide band gap semiconductor alloy material |
| JPS59115574A (ja) * | 1982-12-23 | 1984-07-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| US4589918A (en) * | 1984-03-28 | 1986-05-20 | National Research Institute For Metals | Thermal shock resistant thermoelectric material |
| CA1265922A (en) * | 1984-07-27 | 1990-02-20 | Helmut Tributsch | Photoactive pyrite layer and process for making and using same |
| DE3526910A1 (de) * | 1984-07-27 | 1986-02-13 | Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin | Photoaktive pyritschicht, verfahren zu deren herstellung und verwendung derartiger pyritschichten |
| US4766471A (en) * | 1986-01-23 | 1988-08-23 | Energy Conversion Devices, Inc. | Thin film electro-optical devices |
| FR2694451B1 (fr) * | 1992-07-29 | 1994-09-30 | Asulab Sa | Cellule photovoltaïque. |
| CA2110097C (en) * | 1992-11-30 | 2002-07-09 | Soichiro Kawakami | Secondary battery |
-
1998
- 1998-04-29 EP EP98810382A patent/EP0954033A1/de not_active Withdrawn
- 1998-10-23 AT AT98948658T patent/ATE287576T1/de active
- 1998-10-23 WO PCT/CH1998/000455 patent/WO1999056325A1/de active IP Right Grant
- 1998-10-23 DK DK98948658T patent/DK1032949T3/da active
- 1998-10-23 ES ES98948658T patent/ES2239406T3/es not_active Expired - Lifetime
- 1998-10-23 NZ NZ336848A patent/NZ336848A/en not_active IP Right Cessation
- 1998-10-23 EP EP98948658A patent/EP1032949B1/de not_active Expired - Lifetime
- 1998-10-23 DE DE59812504T patent/DE59812504D1/de not_active Expired - Lifetime
- 1998-10-23 US US09/319,772 patent/US6635942B2/en not_active Expired - Lifetime
- 1998-10-23 CZ CZ0150499A patent/CZ298589B6/cs not_active IP Right Cessation
- 1998-10-23 IL IL13153498A patent/IL131534A/en not_active IP Right Cessation
- 1998-10-23 AU AU95275/98A patent/AU756671B2/en not_active Ceased
- 1998-10-23 KR KR1019997006817A patent/KR100613524B1/ko not_active IP Right Cessation
- 1998-10-23 RU RU99118904/28A patent/RU2219620C2/ru not_active IP Right Cessation
- 1998-10-23 CN CN988024780A patent/CN1218405C/zh not_active Expired - Fee Related
- 1998-10-23 PT PT98948658T patent/PT1032949E/pt unknown
- 1998-10-23 JP JP54086599A patent/JP3874429B2/ja not_active Expired - Fee Related
- 1998-10-23 TR TR1999/03266T patent/TR199903266T1/xx unknown
- 1998-10-23 CA CA002275298A patent/CA2275298C/en not_active Expired - Fee Related
- 1998-10-23 HU HU0004391A patent/HU227655B1/hu not_active IP Right Cessation
- 1998-10-23 BR BRPI9808074-1A patent/BR9808074B1/pt not_active IP Right Cessation
- 1998-10-23 PL PL337092A patent/PL192742B1/pl unknown
-
1999
- 1999-04-26 MY MYPI99001623A patent/MY124379A/en unknown
- 1999-04-27 AR ARP990101934A patent/AR019111A1/es active IP Right Grant
- 1999-04-28 TW TW088106833A patent/TW434915B/zh not_active IP Right Cessation
- 1999-07-20 NO NO993552A patent/NO993552L/no not_active Application Discontinuation
- 1999-09-01 BG BG103706A patent/BG64069B1/bg unknown
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