BG103706A - Полупроводников конструктивен елемент, по-специално елемент за слънчева батерия, както и метод за неговото производство - Google Patents

Полупроводников конструктивен елемент, по-специално елемент за слънчева батерия, както и метод за неговото производство

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Publication number
BG103706A
BG103706A BG103706A BG10370699A BG103706A BG 103706 A BG103706 A BG 103706A BG 103706 A BG103706 A BG 103706A BG 10370699 A BG10370699 A BG 10370699A BG 103706 A BG103706 A BG 103706A
Authority
BG
Bulgaria
Prior art keywords
component
solid state
preparation
well
solar battery
Prior art date
Application number
BG103706A
Other languages
English (en)
Other versions
BG64069B1 (bg
Inventor
VECCHIA Nunzio LA
Original Assignee
VECCHIA Nunzio LA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by VECCHIA Nunzio LA filed Critical VECCHIA Nunzio LA
Publication of BG103706A publication Critical patent/BG103706A/bg
Publication of BG64069B1 publication Critical patent/BG64069B1/bg

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Елементът (50) е с повишена ефективност, особено когато се използва като соларен елемент. Той включва поне един полупроводников основен материал (40), състоящ се поне от един слой очистен пирит (51),един слой бор (52) и един слой фосфор (53).
BG103706A 1998-04-29 1999-09-01 Полупроводников конструктивен елемент, по-специално елемент за слънчева батерия, както и метод за неговото производство BG64069B1 (bg)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP98810382A EP0954033A1 (de) 1998-04-29 1998-04-29 Halbleiterbauelement, insbesondere eine Solarzelle, mit einer Schicht aus Pyrit, sowie Verfahren zu dessen Herstellung
PCT/CH1998/000455 WO1999056325A1 (de) 1998-04-29 1998-10-23 Halbleiterbauelement, insbesondere eine solarzelle, sowie verfahren zu dessen herstellung

Publications (2)

Publication Number Publication Date
BG103706A true BG103706A (bg) 2000-05-31
BG64069B1 BG64069B1 (bg) 2003-11-28

Family

ID=8236060

Family Applications (1)

Application Number Title Priority Date Filing Date
BG103706A BG64069B1 (bg) 1998-04-29 1999-09-01 Полупроводников конструктивен елемент, по-специално елемент за слънчева батерия, както и метод за неговото производство

Country Status (26)

Country Link
US (1) US6635942B2 (bg)
EP (2) EP0954033A1 (bg)
JP (1) JP3874429B2 (bg)
KR (1) KR100613524B1 (bg)
CN (1) CN1218405C (bg)
AR (1) AR019111A1 (bg)
AT (1) ATE287576T1 (bg)
AU (1) AU756671B2 (bg)
BG (1) BG64069B1 (bg)
BR (1) BR9808074B1 (bg)
CA (1) CA2275298C (bg)
CZ (1) CZ298589B6 (bg)
DE (1) DE59812504D1 (bg)
DK (1) DK1032949T3 (bg)
ES (1) ES2239406T3 (bg)
HU (1) HU227655B1 (bg)
IL (1) IL131534A (bg)
MY (1) MY124379A (bg)
NO (1) NO993552L (bg)
NZ (1) NZ336848A (bg)
PL (1) PL192742B1 (bg)
PT (1) PT1032949E (bg)
RU (1) RU2219620C2 (bg)
TR (1) TR199903266T1 (bg)
TW (1) TW434915B (bg)
WO (1) WO1999056325A1 (bg)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1300375C (zh) * 2004-12-07 2007-02-14 浙江大学 电沉积氧化及热硫化合成二硫化铁薄膜的方法
JP4938314B2 (ja) * 2006-01-16 2012-05-23 シャープ株式会社 光電変換装置および半導体接合素子の製造方法
US8093684B2 (en) * 2006-01-16 2012-01-10 Sharp Kabushiki Kaisha Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same
US20110240108A1 (en) 2010-04-02 2011-10-06 Matt Law Method To Synthesize Colloidal Iron Pyrite (FeS2) Nanocrystals And Fabricate Iron Pyrite Thin Film Solar Cells
US10680125B2 (en) * 2011-11-15 2020-06-09 Nutech Ventures Iron pyrite nanocrystals
JP5377732B2 (ja) * 2012-09-14 2013-12-25 シャープ株式会社 半導体、ｐ型半導体、半導体接合素子、ｐｎ接合素子、および光電変換装置
US10790144B2 (en) 2013-06-24 2020-09-29 Arizona Board Of Regents On Behalf Of Arizona State University Method to produce pyrite
US9705012B2 (en) * 2014-03-18 2017-07-11 The United States Of America, As Represented By The Secretary Of The Navy Method of passivating an iron disulfide surface via encapsulation in zinc sulfide
US10181598B2 (en) 2015-01-05 2019-01-15 University Of Florida Resarch Foundation, Inc. Lithium ion battery cathodes, methods of making, and methods of use thereof
CN105140338B (zh) * 2015-07-29 2017-07-04 云南师范大学 一种低成本FeS2薄膜太阳电池的制备方法
EP3418719A1 (en) 2017-06-23 2018-12-26 Cellix Limited System and method for improved identification of particles or cells
EP3418717A1 (en) 2017-06-23 2018-12-26 Cellix Limited A microfluidic apparatus for separation of particulates in a fluid
EP3418721A1 (en) 2017-06-23 2018-12-26 Cellix Limited A microfluidic chip

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852563A (en) * 1974-02-01 1974-12-03 Hewlett Packard Co Thermal printing head
US4131486A (en) * 1977-01-19 1978-12-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Back wall solar cell
US4710786A (en) * 1978-03-16 1987-12-01 Ovshinsky Stanford R Wide band gap semiconductor alloy material
JPS59115574A (ja) * 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
US4589918A (en) * 1984-03-28 1986-05-20 National Research Institute For Metals Thermal shock resistant thermoelectric material
DE3526910A1 (de) * 1984-07-27 1986-02-13 Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin Photoaktive pyritschicht, verfahren zu deren herstellung und verwendung derartiger pyritschichten
CA1265922A (en) * 1984-07-27 1990-02-20 Helmut Tributsch Photoactive pyrite layer and process for making and using same
US4766471A (en) * 1986-01-23 1988-08-23 Energy Conversion Devices, Inc. Thin film electro-optical devices
FR2694451B1 (fr) * 1992-07-29 1994-09-30 Asulab Sa Cellule photovoltaïque.
CA2110097C (en) * 1992-11-30 2002-07-09 Soichiro Kawakami Secondary battery

Also Published As

Publication number Publication date
CZ298589B6 (cs) 2007-11-14
NO993552D0 (no) 1999-07-20
TW434915B (en) 2001-05-16
IL131534A0 (en) 2001-01-28
WO1999056325A1 (de) 1999-11-04
NO993552L (no) 1999-11-04
CN1218405C (zh) 2005-09-07
KR20000070571A (ko) 2000-11-25
AU756671B2 (en) 2003-01-23
RU2219620C2 (ru) 2003-12-20
ATE287576T1 (de) 2005-02-15
CZ150499A3 (cs) 2000-05-17
JP3874429B2 (ja) 2007-01-31
NZ336848A (en) 2001-10-26
PL337092A1 (en) 2000-07-31
BR9808074C2 (pt) 2000-09-05
CA2275298C (en) 2005-07-19
HUP0004391A2 (en) 2001-03-28
EP1032949A1 (de) 2000-09-06
JP2002516651A (ja) 2002-06-04
US20030107099A1 (en) 2003-06-12
HU227655B1 (en) 2011-10-28
BR9808074B1 (pt) 2010-02-09
HUP0004391A3 (en) 2004-01-28
ES2239406T3 (es) 2005-09-16
BG64069B1 (bg) 2003-11-28
EP1032949B1 (de) 2005-01-19
AR019111A1 (es) 2001-12-26
PT1032949E (pt) 2005-06-30
EP0954033A1 (de) 1999-11-03
BR9808074A (pt) 2000-03-28
DE59812504D1 (de) 2005-02-24
KR100613524B1 (ko) 2006-08-16
US6635942B2 (en) 2003-10-21
CA2275298A1 (en) 1999-10-29
PL192742B1 (pl) 2006-12-29
TR199903266T1 (xx) 2002-01-21
IL131534A (en) 2004-06-01
MY124379A (en) 2006-06-30
DK1032949T3 (da) 2005-05-23
AU9527598A (en) 1999-11-16
CN1253665A (zh) 2000-05-17

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