BE873472A - Procede d'epitaxie par faisceau moleculaire avec pre-melange - Google Patents

Procede d'epitaxie par faisceau moleculaire avec pre-melange

Info

Publication number
BE873472A
BE873472A BE192891A BE192891A BE873472A BE 873472 A BE873472 A BE 873472A BE 192891 A BE192891 A BE 192891A BE 192891 A BE192891 A BE 192891A BE 873472 A BE873472 A BE 873472A
Authority
BE
Belgium
Prior art keywords
mix
molecular beam
beam epitaxy
epitaxy process
molecular
Prior art date
Application number
BE192891A
Other languages
English (en)
French (fr)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE873472A publication Critical patent/BE873472A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/961—Ion beam source and generation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE192891A 1978-01-16 1979-01-15 Procede d'epitaxie par faisceau moleculaire avec pre-melange BE873472A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/869,779 US4159919A (en) 1978-01-16 1978-01-16 Molecular beam epitaxy using premixing

Publications (1)

Publication Number Publication Date
BE873472A true BE873472A (fr) 1979-05-02

Family

ID=25354256

Family Applications (1)

Application Number Title Priority Date Filing Date
BE192891A BE873472A (fr) 1978-01-16 1979-01-15 Procede d'epitaxie par faisceau moleculaire avec pre-melange

Country Status (9)

Country Link
US (1) US4159919A (de)
JP (1) JPS54101779A (de)
BE (1) BE873472A (de)
DE (1) DE2901439A1 (de)
FR (1) FR2414367A1 (de)
GB (1) GB2012818B (de)
IT (1) IT1110988B (de)
NL (1) NL7900308A (de)
SE (1) SE432032B (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0031180A3 (de) * 1979-12-19 1983-07-20 Philips Electronics Uk Limited Verfahren zum Züchten einer gedopten III-V-Legierungsschicht durch Molekularstrahl-Epitaxie und Halbleitervorrichtung, bestehend aus einem Halbleitersubstrat, bedeckt mit einer epitaxialen gedopten III-V-Legierungsschicht, die durch ein solches Verfahren gezüchtet wird
JPS5711899A (en) * 1980-06-24 1982-01-21 Fujitsu Ltd Molecular beam epitaxial growth
US4392453A (en) * 1981-08-26 1983-07-12 Varian Associates, Inc. Molecular beam converters for vacuum coating systems
US4550411A (en) * 1983-03-30 1985-10-29 Vg Instruments Group Limited Sources used in molecular beam epitaxy
JPS6051696A (ja) * 1983-08-30 1985-03-23 Rohm Co Ltd 分子線エピタキシャル装置のウエハ装着構造
US4504329A (en) * 1983-10-06 1985-03-12 The United States Of America As Represented By The Secretary Of The Air Force Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source
JPS60117468U (ja) * 1984-01-17 1985-08-08 土田　静夫 ろうそく用火消具
GB2158843A (en) * 1984-05-14 1985-11-20 Philips Electronic Associated Method of manufacturing a semiconductor device by molecular beam epitaxy
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
JPH0669025B2 (ja) * 1984-12-07 1994-08-31 シャープ株式会社 半導体結晶成長装置
US5047111A (en) * 1985-03-16 1991-09-10 Director-General Of The Agency Of Industrial Science And Technology Method of forming a metal silicide film
US5250148A (en) * 1985-05-15 1993-10-05 Research Development Corporation Process for growing GaAs monocrystal film
GB2192902B (en) * 1985-08-07 1989-08-16 Commw Of Australia Control of uniformity of growing alloy film
KR900002687B1 (ko) * 1985-12-16 1990-04-23 후지쓰가부시끼가이샤 Mbe법에 의한 기판에 격자 정합시키는 4원 또는 5원 흔정 반도체의 성장방법
US4786616A (en) * 1987-06-12 1988-11-22 American Telephone And Telegraph Company Method for heteroepitaxial growth using multiple MBE chambers
EP0307096A3 (de) * 1987-09-08 1990-12-05 Varian Associates, Inc. Einrichtung zur Messung der Wachstumsgeschwindigkeit für Molekularstrahl-Epitaxie
JPH0647515B2 (ja) * 1988-12-08 1994-06-22 シャープ株式会社 化合物半導体エピタキシャル成長法
US5028561A (en) * 1989-06-15 1991-07-02 Hughes Aircraft Company Method of growing p-type group II-VI material
JP2559492B2 (ja) * 1989-07-05 1996-12-04 シャープ株式会社 化合物半導体発光素子の製造方法
JPH0751478B2 (ja) * 1989-11-24 1995-06-05 新技術事業団 化合物結晶のエピタキシャル成長方法
JPH07115990B2 (ja) * 1990-06-11 1995-12-13 松下電器産業株式会社 結晶表面検査方法および結晶成長装置
US5171399A (en) * 1990-08-15 1992-12-15 The United States Of America As Represented By The United States Department Of Energy Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy
JP2987379B2 (ja) * 1991-11-30 1999-12-06 科学技術振興事業団 半導体結晶のエピタキシャル成長方法
US5364492A (en) * 1992-09-17 1994-11-15 Varian Associates, Inc. Method of deposing by molecular beam epitaxy
US6214712B1 (en) * 1999-09-16 2001-04-10 Ut-Battelle, Llc Method of physical vapor deposition of metal oxides on semiconductors
JP3964367B2 (ja) * 2003-08-25 2007-08-22 シャープ株式会社 分子線エピタキシャル成長装置及びその制御方法
JP2006176831A (ja) * 2004-12-22 2006-07-06 Tokyo Electron Ltd 蒸着装置
WO2011082179A1 (en) * 2009-12-28 2011-07-07 Global Solar Energy, Inc. Apparatus and methods of mixing and depositing thin film photovoltaic compositions

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3634143A (en) * 1969-05-08 1972-01-11 Avco Corp Preparation of iii{14 v alloys for infrared detectors
US3672992A (en) * 1969-07-30 1972-06-27 Gen Electric Method of forming group iii-v compound photoemitters having a high quantum efficiency and long wavelength response
US3716424A (en) * 1970-04-02 1973-02-13 Us Navy Method of preparation of lead sulfide pn junction diodes
US3793070A (en) * 1971-06-01 1974-02-19 Us Navy Method of varying the carrier concentration of lead-tin sulfide epitaxial films
JPS4874484A (de) * 1972-01-12 1973-10-06
US3839084A (en) * 1972-11-29 1974-10-01 Bell Telephone Labor Inc Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds
US3915765A (en) * 1973-06-25 1975-10-28 Bell Telephone Labor Inc MBE technique for fabricating semiconductor devices having low series resistance
IN145018B (de) * 1974-08-22 1978-08-12 Westinghouse Electric Corp

Also Published As

Publication number Publication date
NL7900308A (nl) 1979-07-18
GB2012818A (en) 1979-08-01
DE2901439A1 (de) 1979-07-19
IT1110988B (it) 1986-01-13
FR2414367B1 (de) 1982-10-22
JPS54101779A (en) 1979-08-10
SE432032B (sv) 1984-03-12
FR2414367A1 (fr) 1979-08-10
GB2012818B (en) 1982-07-14
IT7919291A0 (it) 1979-01-15
US4159919A (en) 1979-07-03
JPS5745715B2 (de) 1982-09-29
SE7900143L (sv) 1979-07-17

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTERN ELECTRIC CY INC.

Effective date: 19850115