BE859992A - Thyristor declenche par une tension qui diminue rapidement - Google Patents

Thyristor declenche par une tension qui diminue rapidement

Info

Publication number
BE859992A
BE859992A BE181962A BE181962A BE859992A BE 859992 A BE859992 A BE 859992A BE 181962 A BE181962 A BE 181962A BE 181962 A BE181962 A BE 181962A BE 859992 A BE859992 A BE 859992A
Authority
BE
Belgium
Prior art keywords
decreasing voltage
quickly decreasing
thyristor triggered
thyristor
triggered
Prior art date
Application number
BE181962A
Other languages
English (en)
French (fr)
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE859992A publication Critical patent/BE859992A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/87Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Rectifiers (AREA)
BE181962A 1976-10-29 1977-10-21 Thyristor declenche par une tension qui diminue rapidement BE859992A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73679576A 1976-10-29 1976-10-29

Publications (1)

Publication Number Publication Date
BE859992A true BE859992A (fr) 1978-04-21

Family

ID=24961330

Family Applications (1)

Application Number Title Priority Date Filing Date
BE181962A BE859992A (fr) 1976-10-29 1977-10-21 Thyristor declenche par une tension qui diminue rapidement

Country Status (13)

Country Link
JP (1) JPS5356979A (ja)
AU (1) AU516308B2 (ja)
BE (1) BE859992A (ja)
BR (1) BR7707015A (ja)
CA (1) CA1104726A (ja)
DE (1) DE2748528A1 (ja)
FR (1) FR2393432A1 (ja)
GB (1) GB1592877A (ja)
HK (1) HK64384A (ja)
IN (1) IN148845B (ja)
PL (1) PL117693B1 (ja)
SE (1) SE7712091L (ja)
ZA (1) ZA775629B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3000804A1 (de) * 1980-01-11 1981-07-16 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Thyristor mit kurzgeschlossenem emitter fuer kurze stromflussdauer
JPS5935689U (ja) * 1982-08-30 1984-03-06 株式会社東芝 冷凍サイクル装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573572A (en) * 1968-09-23 1971-04-06 Int Rectifier Corp Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current
US3731162A (en) * 1969-09-25 1973-05-01 Tokyo Shibaura Electric Co Semiconductor switching device
FR2144581B1 (ja) * 1971-07-06 1976-03-19 Silec Semi Conducteurs
DE2141627C3 (de) * 1971-08-19 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device
DE2210386A1 (de) * 1972-03-03 1973-09-06 Siemens Ag Thyristor
GB1425651A (en) * 1972-04-03 1976-02-18 Motorola Inc Channel firing thyristor
DE2346256C3 (de) * 1973-09-13 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Thyristor
JPS5413959B2 (ja) * 1973-10-17 1979-06-04
JPS5927108B2 (ja) * 1975-02-07 1984-07-03 株式会社日立製作所 半導体制御整流装置

Also Published As

Publication number Publication date
AU2974177A (en) 1979-04-26
PL201799A1 (pl) 1978-05-08
PL117693B1 (en) 1981-08-31
AU516308B2 (en) 1981-05-28
IN148845B (ja) 1981-06-27
CA1104726A (en) 1981-07-07
SE7712091L (sv) 1978-04-30
DE2748528A1 (de) 1978-05-03
FR2393432A1 (fr) 1978-12-29
HK64384A (en) 1984-08-24
GB1592877A (en) 1981-07-08
FR2393432B1 (ja) 1983-08-26
JPS5356979A (en) 1978-05-23
JPS5649459B2 (ja) 1981-11-21
ZA775629B (en) 1978-08-30
BR7707015A (pt) 1978-07-18

Similar Documents

Publication Publication Date Title
FR2321144A1 (fr) Multiplicateur de tension
BR7601109A (pt) Dispositivo repelente anti-artropodes
IT1058673B (it) Tiristore
SE424485B (sv) Tyristor
PL200347A1 (pl) Przyrzad polprzewodnikowy wysokonapieciowy
FR2343602A1 (fr) Imprimante par points
SE7611430L (sv) Spenne
FR2308242A1 (fr) Generateur de tension alternative
IT1085731B (it) Tiristore
BR7700082A (pt) Tiristor de silicio
FR2321773A1 (fr) Redresseur a haute tension
SE7513041L (sv) Spennanordning
BE859992A (fr) Thyristor declenche par une tension qui diminue rapidement
FR2352405A1 (fr) Thyristor declenche par un rayonnement lumineux
BE856827A (fr) Thyristor a haute tension
SE7601319L (sv) Tyristor
SE7502923L (sv) Lastvakt
BE842484A (fr) Diarylbutanolamines anti-arythmiques
AT350668B (de) Gasisolierte thyristoranordnung
FR2310636A1 (fr) Thyristor
SE7706264L (sv) Tyristor
SE7712252L (sv) Tyristoranordning
SU463839A1 (ru) Устройство дл контрол факела
BE856484A (fr) Structure de thyristor integre
IT1081647B (it) Dispositivo di impregnazione per filo

Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19881031