FR2352405A1 - Thyristor declenche par un rayonnement lumineux - Google Patents

Thyristor declenche par un rayonnement lumineux

Info

Publication number
FR2352405A1
FR2352405A1 FR7715343A FR7715343A FR2352405A1 FR 2352405 A1 FR2352405 A1 FR 2352405A1 FR 7715343 A FR7715343 A FR 7715343A FR 7715343 A FR7715343 A FR 7715343A FR 2352405 A1 FR2352405 A1 FR 2352405A1
Authority
FR
France
Prior art keywords
luminous radiation
thyristor triggered
thyristor
triggered
luminous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7715343A
Other languages
English (en)
Other versions
FR2352405B1 (fr
Inventor
Armand Pasquale Ferro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2352405A1 publication Critical patent/FR2352405A1/fr
Application granted granted Critical
Publication of FR2352405B1 publication Critical patent/FR2352405B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
FR7715343A 1976-05-19 1977-05-18 Thyristor declenche par un rayonnement lumineux Granted FR2352405A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/687,986 US4053922A (en) 1976-05-19 1976-05-19 Light triggered thyristor having controlled turn on delay

Publications (2)

Publication Number Publication Date
FR2352405A1 true FR2352405A1 (fr) 1977-12-16
FR2352405B1 FR2352405B1 (fr) 1982-06-04

Family

ID=24762654

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7715343A Granted FR2352405A1 (fr) 1976-05-19 1977-05-18 Thyristor declenche par un rayonnement lumineux

Country Status (7)

Country Link
US (1) US4053922A (fr)
JP (2) JPS52152180A (fr)
AR (1) AR211964A1 (fr)
BR (1) BR7703262A (fr)
DE (1) DE2722517A1 (fr)
FR (1) FR2352405A1 (fr)
GB (1) GB1573826A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH622127A5 (fr) * 1977-12-21 1981-03-13 Bbc Brown Boveri & Cie
US4318115A (en) * 1978-07-24 1982-03-02 Sharp Kabushiki Kaisha Dual junction photoelectric semiconductor device
DE2855265A1 (de) * 1978-12-21 1980-07-10 Bbc Brown Boveri & Cie Thyristor
DE3769188D1 (de) * 1986-03-05 1991-05-16 Siemens Ag Thyristor mit einstellbarem basis-emitter-widerstand.
US6154477A (en) * 1997-05-13 2000-11-28 Berkeley Research Associates, Inc. On-board laser-triggered multi-layer semiconductor power switch
US8536617B2 (en) * 2011-12-16 2013-09-17 General Electric Company Optically triggered semiconductor device and method for making the same
US9142692B2 (en) * 2012-07-23 2015-09-22 Bae Systems Information And Electronic Systems Integration Inc. Thyristor-based, dual-polarity blocking photo-conductive semiconductor switch (PCSS) for short pulse switching and methods

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE344386B (fr) * 1968-04-17 1972-04-10 Hitachi Ltd
JPS508315B1 (fr) * 1970-02-20 1975-04-03
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device
JPS4860589A (fr) * 1971-11-29 1973-08-24
DE2256688B2 (de) * 1972-11-18 1976-05-06 Robert Bosch Gmbh, 7000 Stuttgart Verfahren zum auftrennen von leiterbahnen auf integrierten schaltkreisen
US3969752A (en) * 1973-12-03 1976-07-13 Power Hybrids, Inc. Hybrid transistor
US3893153A (en) * 1974-01-10 1975-07-01 Westinghouse Electric Corp Light activated thyristor with high di/dt capability
US3990092A (en) * 1974-01-11 1976-11-02 Hitachi, Ltd. Resistance element for semiconductor integrated circuit
US3922708A (en) * 1974-03-04 1975-11-25 Ibm Method of producing high value ion implanted resistors
US4012761A (en) * 1976-04-19 1977-03-15 General Electric Company Self-protected semiconductor device

Also Published As

Publication number Publication date
US4053922A (en) 1977-10-11
JPH0220849Y2 (fr) 1990-06-06
GB1573826A (en) 1980-08-28
BR7703262A (pt) 1978-02-08
JPS611857U (ja) 1986-01-08
DE2722517A1 (de) 1977-12-08
JPS52152180A (en) 1977-12-17
FR2352405B1 (fr) 1982-06-04
DE2722517C2 (fr) 1990-12-06
AR211964A1 (es) 1978-04-14

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Legal Events

Date Code Title Description
ST Notification of lapse
ST Notification of lapse