IT1058673B - Tiristore - Google Patents
TiristoreInfo
- Publication number
- IT1058673B IT1058673B IT21489/76A IT2148976A IT1058673B IT 1058673 B IT1058673 B IT 1058673B IT 21489/76 A IT21489/76 A IT 21489/76A IT 2148976 A IT2148976 A IT 2148976A IT 1058673 B IT1058673 B IT 1058673B
- Authority
- IT
- Italy
- Prior art keywords
- thyristor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0646—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB12648/75A GB1499845A (en) | 1975-03-26 | 1975-03-26 | Thyristors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1058673B true IT1058673B (it) | 1982-05-10 |
Family
ID=10008565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT21489/76A IT1058673B (it) | 1975-03-26 | 1976-03-23 | Tiristore |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US4148053A (it) |
| JP (1) | JPS5840345B2 (it) |
| AU (1) | AU504477B2 (it) |
| BE (1) | BE839971A (it) |
| CA (1) | CA1066428A (it) |
| CH (1) | CH600573A5 (it) |
| DE (1) | DE2610828C2 (it) |
| FR (1) | FR2305854A1 (it) |
| GB (1) | GB1499845A (it) |
| IT (1) | IT1058673B (it) |
| SE (1) | SE404107B (it) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55133569A (en) * | 1979-04-06 | 1980-10-17 | Hitachi Ltd | Semiconductor device |
| US4261000A (en) * | 1980-05-23 | 1981-04-07 | General Electric Company | High voltage semiconductor device having an improved dv/dt capability |
| US4261001A (en) * | 1980-05-23 | 1981-04-07 | General Electric Company | Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity |
| JPS5773956A (en) * | 1980-10-27 | 1982-05-08 | Hitachi Ltd | Glass coated semiconductor device |
| US4412242A (en) * | 1980-11-17 | 1983-10-25 | International Rectifier Corporation | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
| BR8203630A (pt) * | 1981-06-29 | 1983-06-14 | Westinghouse Electric Corp | Dispositivo semicondutor processo de preparacao de uma pluralidade de dispositivos semicondutores apassivados com vidro |
| DE3151141A1 (de) * | 1981-12-23 | 1983-06-30 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement mit hoher stossstrombelastbarkeit |
| FR2542148B1 (fr) * | 1983-03-01 | 1986-12-05 | Telemecanique Electrique | Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible |
| DE3331298A1 (de) * | 1983-08-31 | 1985-03-14 | Brown, Boveri & Cie Ag, 6800 Mannheim | Leistungsthyristor auf einem substrat |
| JPS63205955A (ja) * | 1987-02-21 | 1988-08-25 | Nec Corp | プレ−ナ型高耐圧サイリスタ |
| DE3832709A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Thyristor |
| US4974050A (en) * | 1989-05-30 | 1990-11-27 | Motorola Inc. | High voltage semiconductor device and method |
| FR2666174B1 (fr) * | 1990-08-21 | 1997-03-21 | Sgs Thomson Microelectronics | Composant semiconducteur haute tension a faible courant de fuite. |
| DE4119904A1 (de) * | 1991-06-17 | 1992-12-24 | Telefunken Electronic Gmbh | Halbleiteranordnung |
| US20040061170A1 (en) * | 1995-07-31 | 2004-04-01 | Ixys Corporation | Reverse blocking IGBT |
| US6727527B1 (en) | 1995-07-31 | 2004-04-27 | Ixys Corporation | Reverse blocking IGBT |
| US5698454A (en) * | 1995-07-31 | 1997-12-16 | Ixys Corporation | Method of making a reverse blocking IGBT |
| JP4222092B2 (ja) * | 2003-05-07 | 2009-02-12 | 富士電機デバイステクノロジー株式会社 | 半導体ウェハ、半導体装置および半導体装置の製造方法 |
| US7326596B2 (en) | 2004-04-26 | 2008-02-05 | Ixys Corporation | High voltage power device with low diffusion pipe resistance |
| FR2987698B1 (fr) | 2012-03-02 | 2014-04-04 | St Microelectronics Tours Sas | Composant de puissance vertical |
| DE102016124669B3 (de) | 2016-12-16 | 2018-05-17 | Semikron Elektronik Gmbh & Co. Kg | Thyristoren mit einem jeweiligen Halbleiterkörper |
| DE102016124670B4 (de) * | 2016-12-16 | 2020-01-23 | Semikron Elektronik Gmbh & Co. Kg | Thyristor mit einem Halbleiterkörper |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE636316A (it) * | 1962-08-23 | 1900-01-01 | ||
| US3446995A (en) * | 1964-05-27 | 1969-05-27 | Ibm | Semiconductor circuits,devices and methods of improving electrical characteristics of latter |
| DE1614751A1 (de) * | 1967-01-07 | 1970-12-03 | Telefunken Patent | Halbleiteranordnung |
| NL6904619A (it) * | 1969-03-25 | 1970-09-29 | ||
| US3628106A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with protective peripheral junction portion |
| US3608186A (en) * | 1969-10-30 | 1971-09-28 | Jearld L Hutson | Semiconductor device manufacture with junction passivation |
| CH517379A (de) * | 1971-06-18 | 1971-12-31 | Transistor Ag | Halbleitervorrichtung |
| US3772577A (en) * | 1972-02-10 | 1973-11-13 | Texas Instruments Inc | Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same |
| JPS4974486A (it) * | 1972-11-17 | 1974-07-18 | ||
| NL161301C (nl) * | 1972-12-29 | 1980-01-15 | Philips Nv | Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan. |
| JPS4994285A (it) * | 1973-01-12 | 1974-09-06 | ||
| DE2306842C3 (de) * | 1973-02-12 | 1981-10-29 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen einer Vielzahl von Halbleiterelementen aus einer einzigen Halbleiterscheibe |
-
1975
- 1975-03-26 GB GB12648/75A patent/GB1499845A/en not_active Expired
-
1976
- 1976-02-24 SE SE7602247A patent/SE404107B/xx unknown
- 1976-03-15 DE DE2610828A patent/DE2610828C2/de not_active Expired
- 1976-03-16 CA CA248,046A patent/CA1066428A/en not_active Expired
- 1976-03-22 CH CH354676A patent/CH600573A5/xx not_active IP Right Cessation
- 1976-03-23 IT IT21489/76A patent/IT1058673B/it active
- 1976-03-24 AU AU12280/76A patent/AU504477B2/en not_active Expired
- 1976-03-24 JP JP51032393A patent/JPS5840345B2/ja not_active Expired
- 1976-03-24 BE BE165512A patent/BE839971A/xx unknown
- 1976-03-26 FR FR7608864A patent/FR2305854A1/fr active Granted
-
1977
- 1977-12-12 US US05/859,688 patent/US4148053A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| SE7602247L (sv) | 1976-09-27 |
| BE839971A (fr) | 1976-09-24 |
| AU1228076A (en) | 1977-09-29 |
| FR2305854B1 (it) | 1981-11-27 |
| DE2610828A1 (de) | 1976-10-07 |
| CH600573A5 (it) | 1978-06-15 |
| US4148053A (en) | 1979-04-03 |
| JPS51120681A (en) | 1976-10-22 |
| FR2305854A1 (fr) | 1976-10-22 |
| CA1066428A (en) | 1979-11-13 |
| JPS5840345B2 (ja) | 1983-09-05 |
| DE2610828C2 (de) | 1982-06-03 |
| GB1499845A (en) | 1978-02-01 |
| AU504477B2 (en) | 1979-10-18 |
| SE404107B (sv) | 1978-09-18 |
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