BE849906A - Commande automatique d'un dispositif d'affinage par zones de barres de semi-conducteurs - Google Patents

Commande automatique d'un dispositif d'affinage par zones de barres de semi-conducteurs

Info

Publication number
BE849906A
BE849906A BE173678A BE173678A BE849906A BE 849906 A BE849906 A BE 849906A BE 173678 A BE173678 A BE 173678A BE 173678 A BE173678 A BE 173678A BE 849906 A BE849906 A BE 849906A
Authority
BE
Belgium
Prior art keywords
zones
automatic control
refining device
semiconductor bars
bars
Prior art date
Application number
BE173678A
Other languages
English (en)
Inventor
L H Fricke
Th E Reichard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE849906A publication Critical patent/BE849906A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE173678A 1975-12-29 1976-12-28 Commande automatique d'un dispositif d'affinage par zones de barres de semi-conducteurs BE849906A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/645,186 US4080172A (en) 1975-12-29 1975-12-29 Zone refiner automatic control

Publications (1)

Publication Number Publication Date
BE849906A true BE849906A (fr) 1977-06-28

Family

ID=24587976

Family Applications (1)

Application Number Title Priority Date Filing Date
BE173678A BE849906A (fr) 1975-12-29 1976-12-28 Commande automatique d'un dispositif d'affinage par zones de barres de semi-conducteurs

Country Status (6)

Country Link
US (1) US4080172A (fr)
JP (1) JPS52101603A (fr)
BE (1) BE849906A (fr)
CA (1) CA1070222A (fr)
DE (1) DE2659194A1 (fr)
GB (1) GB1570590A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2731250C2 (de) * 1977-07-11 1986-04-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Regelung des Stabquerschnittes beim tiegellosen Zonenschmelzen eines Halbleiterstabes
JPS63307186A (ja) * 1987-06-05 1988-12-14 Shin Etsu Handotai Co Ltd 晶出結晶径制御装置
JPH0651599B2 (ja) * 1987-12-05 1994-07-06 信越半導体株式会社 浮遊帯域制御方法
US5217565A (en) * 1991-11-13 1993-06-08 Wisconsin Alumni Research Foundation Contactless heater floating zone refining and crystal growth
RU94036650A (ru) * 1994-09-28 1996-08-27 Г.С. Бурханов Способ бестигельной зонной плавки для выращивания кристаллических слитков и устройство для его осуществления
EP2558232B1 (fr) * 2010-04-13 2017-07-12 Schmid Silicon Technology GmbH Fabrication de matériaux semi-conducteurs monocristallins
DE102012108009B4 (de) * 2012-08-30 2016-09-01 Topsil Semiconductor Materials A/S Modellprädiktive Regelung des Zonenschmelz-Verfahrens
CN104907006B (zh) * 2015-06-08 2017-03-08 南京邮电大学 一种基于区域熔炼原理的有机固体纯化装置
CN109402725A (zh) * 2018-12-04 2019-03-01 中国电子科技集团公司第四十六研究所 一种用于大直径多晶硅棒料的提纯线圈及方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB911515A (en) * 1959-10-19 1962-11-28 Ckd Praha Improvements in or relating to the purification of materials by the zone melting method
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods
CH417542A (de) * 1961-12-07 1966-07-31 Siemens Ag Anordnung zur Durchführung von Zonenschmelzprozessen an Halbleiterstäben
BE631568A (fr) * 1962-04-27
FR1455670A (fr) * 1964-12-11 1966-10-14 Siemens Ag Procédé de fabrication de barreaux semi-conducteurs de diamètre pratiquement constant par fusion par zone sans creuset
NL6512921A (fr) * 1965-10-06 1967-04-07
US3621213A (en) * 1969-11-26 1971-11-16 Ibm Programmed digital-computer-controlled system for automatic growth of semiconductor crystals
US3718757A (en) * 1970-12-29 1973-02-27 Ibm Temperature monitoring
US3740563A (en) * 1971-06-25 1973-06-19 Monsanto Co Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals
US3865554A (en) * 1971-09-23 1975-02-11 Little Inc A Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique
US3958129A (en) * 1974-08-05 1976-05-18 Motorola, Inc. Automatic crystal diameter control for growth of semiconductor crystals

Also Published As

Publication number Publication date
US4080172A (en) 1978-03-21
GB1570590A (en) 1980-07-02
CA1070222A (fr) 1980-01-22
JPS52101603A (en) 1977-08-25
DE2659194A1 (de) 1977-07-07

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