BE836434A - Memoire a semi-conducteurs a acces aleatoire - Google Patents

Memoire a semi-conducteurs a acces aleatoire

Info

Publication number
BE836434A
BE836434A BE162574A BE162574A BE836434A BE 836434 A BE836434 A BE 836434A BE 162574 A BE162574 A BE 162574A BE 162574 A BE162574 A BE 162574A BE 836434 A BE836434 A BE 836434A
Authority
BE
Belgium
Prior art keywords
random access
semiconductor memory
semiconductor
memory
random
Prior art date
Application number
BE162574A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE836434A publication Critical patent/BE836434A/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/169Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
BE162574A 1974-12-09 1975-12-09 Memoire a semi-conducteurs a acces aleatoire BE836434A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US530574A US3916394A (en) 1974-12-09 1974-12-09 High-speed random access memory

Publications (1)

Publication Number Publication Date
BE836434A true BE836434A (fr) 1976-04-01

Family

ID=24114139

Family Applications (1)

Application Number Title Priority Date Filing Date
BE162574A BE836434A (fr) 1974-12-09 1975-12-09 Memoire a semi-conducteurs a acces aleatoire

Country Status (7)

Country Link
US (1) US3916394A (xx)
JP (1) JPS5757791B2 (xx)
BE (1) BE836434A (xx)
CA (1) CA1047645A (xx)
DE (1) DE2554707C2 (xx)
FR (1) FR2294510A1 (xx)
GB (1) GB1518200A (xx)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833634B2 (ja) * 1979-02-28 1983-07-21 富士通株式会社 メモリセルアレイの駆動方式
US4395765A (en) * 1981-04-23 1983-07-26 Bell Telephone Laboratories, Incorporated Multiport memory array

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821719A (en) * 1970-06-12 1974-06-28 Hitachi Ltd Semiconductor memory
US3725878A (en) * 1970-10-30 1973-04-03 Ibm Memory cell circuit
ES404185A1 (es) * 1971-07-06 1975-06-01 Ibm Una disposicion de celula de memoria de acceso casual aco- plada por carga electrica.
JPS5248777B2 (xx) * 1971-09-20 1977-12-12
US3764825A (en) * 1972-01-10 1973-10-09 R Stewart Active element memory

Also Published As

Publication number Publication date
FR2294510A1 (fr) 1976-07-09
JPS5168736A (xx) 1976-06-14
JPS5757791B2 (xx) 1982-12-06
DE2554707C2 (de) 1984-02-23
DE2554707A1 (de) 1976-06-10
US3916394A (en) 1975-10-28
FR2294510B1 (xx) 1980-04-30
CA1047645A (en) 1979-01-30
AU8681475A (en) 1977-05-26
GB1518200A (en) 1978-07-19

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: HONEYWELL INFORMATION SYSTEMS INC.

Effective date: 19891231