BE822433A - De realisation de dispositif semiconducteur de de puissance a contacts presses - Google Patents
De realisation de dispositif semiconducteur de de puissance a contacts pressesInfo
- Publication number
- BE822433A BE822433A BE150718A BE150718A BE822433A BE 822433 A BE822433 A BE 822433A BE 150718 A BE150718 A BE 150718A BE 150718 A BE150718 A BE 150718A BE 822433 A BE822433 A BE 822433A
- Authority
- BE
- Belgium
- Prior art keywords
- producing
- semiconductor device
- power semiconductor
- pressed contacts
- contacts
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/233—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7344329A FR2254879B1 (enrdf_load_html_response) | 1973-12-12 | 1973-12-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE822433A true BE822433A (fr) | 1975-05-20 |
Family
ID=9129097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE150718A BE822433A (fr) | 1973-12-12 | 1974-11-20 | De realisation de dispositif semiconducteur de de puissance a contacts presses |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE822433A (enrdf_load_html_response) |
DE (1) | DE2458410C2 (enrdf_load_html_response) |
FR (1) | FR2254879B1 (enrdf_load_html_response) |
GB (1) | GB1488860A (enrdf_load_html_response) |
IT (1) | IT1030873B (enrdf_load_html_response) |
NL (1) | NL7416194A (enrdf_load_html_response) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2431506C3 (de) * | 1974-07-01 | 1979-06-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen eines Thyristors |
JPS5382278A (en) | 1976-12-28 | 1978-07-20 | Toshiba Corp | Production of semiconductor device |
FR2378354A1 (fr) | 1977-01-19 | 1978-08-18 | Alsthom Atlantique | Procede de fabrication de semiconducteurs de puissance a contacts presses |
GB2095904B (en) * | 1981-03-23 | 1985-11-27 | Gen Electric | Semiconductor device with built-up low resistance contact and laterally conducting second contact |
JPS5871633A (ja) * | 1981-10-23 | 1983-04-28 | Toshiba Corp | 圧接型半導体装置 |
DE3232837A1 (de) * | 1982-09-03 | 1984-03-08 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen einer 2-ebenen-metallisierung fuer halbleiterbauelemente, insbesondere fuer leistungshalbleiterbauelemente wie thyristoren |
JPS60132366A (ja) * | 1983-12-21 | 1985-07-15 | Toshiba Corp | 半導体装置 |
EP0220469B1 (de) * | 1985-10-15 | 1989-12-06 | Siemens Aktiengesellschaft | Leistungsthyristor |
DE3840226A1 (de) * | 1988-11-29 | 1990-05-31 | Siemens Ag | Verfahren zur herstellung von selbstjustierten metallisierungen fuer fet |
DE19640242C2 (de) * | 1996-09-30 | 2002-01-10 | Infineon Technologies Ag | Kathodenanordnung für GTO-Thyristor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3525910A (en) * | 1968-05-31 | 1970-08-25 | Westinghouse Electric Corp | Contact system for intricate geometry devices |
-
1973
- 1973-12-12 FR FR7344329A patent/FR2254879B1/fr not_active Expired
-
1974
- 1974-11-20 BE BE150718A patent/BE822433A/xx unknown
- 1974-12-06 IT IT3024274A patent/IT1030873B/it active
- 1974-12-06 GB GB5293774A patent/GB1488860A/en not_active Expired
- 1974-12-10 DE DE2458410A patent/DE2458410C2/de not_active Expired
- 1974-12-12 NL NL7416194A patent/NL7416194A/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
NL7416194A (nl) | 1975-06-16 |
FR2254879B1 (enrdf_load_html_response) | 1977-09-23 |
FR2254879A1 (enrdf_load_html_response) | 1975-07-11 |
DE2458410C2 (de) | 1983-07-28 |
GB1488860A (en) | 1977-10-12 |
DE2458410A1 (de) | 1975-06-19 |
IT1030873B (it) | 1979-04-10 |
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