FR2254879B1 - - Google Patents

Info

Publication number
FR2254879B1
FR2254879B1 FR7344329A FR7344329A FR2254879B1 FR 2254879 B1 FR2254879 B1 FR 2254879B1 FR 7344329 A FR7344329 A FR 7344329A FR 7344329 A FR7344329 A FR 7344329A FR 2254879 B1 FR2254879 B1 FR 2254879B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7344329A
Other languages
French (fr)
Other versions
FR2254879A1 (enrdf_load_html_response
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cegelec SA
Original Assignee
Cegelec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cegelec SA filed Critical Cegelec SA
Priority to FR7344329A priority Critical patent/FR2254879B1/fr
Priority to BE150718A priority patent/BE822433A/xx
Priority to GB5293774A priority patent/GB1488860A/en
Priority to IT3024274A priority patent/IT1030873B/it
Priority to DE2458410A priority patent/DE2458410C2/de
Priority to NL7416194A priority patent/NL7416194A/xx
Publication of FR2254879A1 publication Critical patent/FR2254879A1/fr
Application granted granted Critical
Publication of FR2254879B1 publication Critical patent/FR2254879B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
FR7344329A 1973-12-12 1973-12-12 Expired FR2254879B1 (enrdf_load_html_response)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7344329A FR2254879B1 (enrdf_load_html_response) 1973-12-12 1973-12-12
BE150718A BE822433A (fr) 1973-12-12 1974-11-20 De realisation de dispositif semiconducteur de de puissance a contacts presses
GB5293774A GB1488860A (en) 1973-12-12 1974-12-06 Method of manufacturing a semiconductor device having pressed contacts
IT3024274A IT1030873B (it) 1973-12-12 1974-12-06 Procedimento di realizzazione di dispositivo semiconduttore di potenza a contatti pressati
DE2458410A DE2458410C2 (de) 1973-12-12 1974-12-10 Herstellungsverfahren für eine Halbleiteranordnung
NL7416194A NL7416194A (nl) 1973-12-12 1974-12-12 Werkwijze voor de vervaardiging van een vermo- genshalfgeleider met drukcontacten.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7344329A FR2254879B1 (enrdf_load_html_response) 1973-12-12 1973-12-12

Publications (2)

Publication Number Publication Date
FR2254879A1 FR2254879A1 (enrdf_load_html_response) 1975-07-11
FR2254879B1 true FR2254879B1 (enrdf_load_html_response) 1977-09-23

Family

ID=9129097

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7344329A Expired FR2254879B1 (enrdf_load_html_response) 1973-12-12 1973-12-12

Country Status (6)

Country Link
BE (1) BE822433A (enrdf_load_html_response)
DE (1) DE2458410C2 (enrdf_load_html_response)
FR (1) FR2254879B1 (enrdf_load_html_response)
GB (1) GB1488860A (enrdf_load_html_response)
IT (1) IT1030873B (enrdf_load_html_response)
NL (1) NL7416194A (enrdf_load_html_response)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2431506C3 (de) * 1974-07-01 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen eines Thyristors
JPS5382278A (en) 1976-12-28 1978-07-20 Toshiba Corp Production of semiconductor device
FR2378354A1 (fr) 1977-01-19 1978-08-18 Alsthom Atlantique Procede de fabrication de semiconducteurs de puissance a contacts presses
GB2095904B (en) * 1981-03-23 1985-11-27 Gen Electric Semiconductor device with built-up low resistance contact and laterally conducting second contact
JPS5871633A (ja) * 1981-10-23 1983-04-28 Toshiba Corp 圧接型半導体装置
DE3232837A1 (de) * 1982-09-03 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer 2-ebenen-metallisierung fuer halbleiterbauelemente, insbesondere fuer leistungshalbleiterbauelemente wie thyristoren
JPS60132366A (ja) * 1983-12-21 1985-07-15 Toshiba Corp 半導体装置
EP0220469B1 (de) * 1985-10-15 1989-12-06 Siemens Aktiengesellschaft Leistungsthyristor
DE3840226A1 (de) * 1988-11-29 1990-05-31 Siemens Ag Verfahren zur herstellung von selbstjustierten metallisierungen fuer fet
DE19640242C2 (de) * 1996-09-30 2002-01-10 Infineon Technologies Ag Kathodenanordnung für GTO-Thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3525910A (en) * 1968-05-31 1970-08-25 Westinghouse Electric Corp Contact system for intricate geometry devices

Also Published As

Publication number Publication date
NL7416194A (nl) 1975-06-16
FR2254879A1 (enrdf_load_html_response) 1975-07-11
DE2458410C2 (de) 1983-07-28
GB1488860A (en) 1977-10-12
DE2458410A1 (de) 1975-06-19
BE822433A (fr) 1975-05-20
IT1030873B (it) 1979-04-10

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Legal Events

Date Code Title Description
TP Transmission of property