BE822433A - De realisation de dispositif semiconducteur de de puissance a contacts presses - Google Patents

De realisation de dispositif semiconducteur de de puissance a contacts presses

Info

Publication number
BE822433A
BE822433A BE150718A BE150718A BE822433A BE 822433 A BE822433 A BE 822433A BE 150718 A BE150718 A BE 150718A BE 150718 A BE150718 A BE 150718A BE 822433 A BE822433 A BE 822433A
Authority
BE
Belgium
Prior art keywords
producing
semiconductor device
power semiconductor
pressed contacts
contacts
Prior art date
Application number
BE150718A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE822433A publication Critical patent/BE822433A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233Cathode or anode electrodes for thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231Emitter or collector electrodes for bipolar transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10W72/00
BE150718A 1973-12-12 1974-11-20 De realisation de dispositif semiconducteur de de puissance a contacts presses BE822433A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7344329A FR2254879B1 (cg-RX-API-DMAC10.html) 1973-12-12 1973-12-12

Publications (1)

Publication Number Publication Date
BE822433A true BE822433A (fr) 1975-05-20

Family

ID=9129097

Family Applications (1)

Application Number Title Priority Date Filing Date
BE150718A BE822433A (fr) 1973-12-12 1974-11-20 De realisation de dispositif semiconducteur de de puissance a contacts presses

Country Status (6)

Country Link
BE (1) BE822433A (cg-RX-API-DMAC10.html)
DE (1) DE2458410C2 (cg-RX-API-DMAC10.html)
FR (1) FR2254879B1 (cg-RX-API-DMAC10.html)
GB (1) GB1488860A (cg-RX-API-DMAC10.html)
IT (1) IT1030873B (cg-RX-API-DMAC10.html)
NL (1) NL7416194A (cg-RX-API-DMAC10.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2431506C3 (de) * 1974-07-01 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen eines Thyristors
JPS5382278A (en) 1976-12-28 1978-07-20 Toshiba Corp Production of semiconductor device
FR2378354A1 (fr) 1977-01-19 1978-08-18 Alsthom Atlantique Procede de fabrication de semiconducteurs de puissance a contacts presses
GB2095904B (en) * 1981-03-23 1985-11-27 Gen Electric Semiconductor device with built-up low resistance contact and laterally conducting second contact
JPS5871633A (ja) * 1981-10-23 1983-04-28 Toshiba Corp 圧接型半導体装置
DE3232837A1 (de) * 1982-09-03 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer 2-ebenen-metallisierung fuer halbleiterbauelemente, insbesondere fuer leistungshalbleiterbauelemente wie thyristoren
JPS60132366A (ja) * 1983-12-21 1985-07-15 Toshiba Corp 半導体装置
EP0220469B1 (de) * 1985-10-15 1989-12-06 Siemens Aktiengesellschaft Leistungsthyristor
DE3840226A1 (de) * 1988-11-29 1990-05-31 Siemens Ag Verfahren zur herstellung von selbstjustierten metallisierungen fuer fet
DE19640242C2 (de) * 1996-09-30 2002-01-10 Infineon Technologies Ag Kathodenanordnung für GTO-Thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3525910A (en) * 1968-05-31 1970-08-25 Westinghouse Electric Corp Contact system for intricate geometry devices

Also Published As

Publication number Publication date
NL7416194A (nl) 1975-06-16
FR2254879A1 (cg-RX-API-DMAC10.html) 1975-07-11
DE2458410C2 (de) 1983-07-28
GB1488860A (en) 1977-10-12
IT1030873B (it) 1979-04-10
DE2458410A1 (de) 1975-06-19
FR2254879B1 (cg-RX-API-DMAC10.html) 1977-09-23

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