IT1030873B - Procedimento di realizzazione di dispositivo semiconduttore di potenza a contatti pressati - Google Patents

Procedimento di realizzazione di dispositivo semiconduttore di potenza a contatti pressati

Info

Publication number
IT1030873B
IT1030873B IT3024274A IT3024274A IT1030873B IT 1030873 B IT1030873 B IT 1030873B IT 3024274 A IT3024274 A IT 3024274A IT 3024274 A IT3024274 A IT 3024274A IT 1030873 B IT1030873 B IT 1030873B
Authority
IT
Italy
Prior art keywords
realization
procedure
power device
pressed contacts
semiconductive power
Prior art date
Application number
IT3024274A
Other languages
English (en)
Italian (it)
Original Assignee
Alsthom Cgee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alsthom Cgee filed Critical Alsthom Cgee
Application granted granted Critical
Publication of IT1030873B publication Critical patent/IT1030873B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W72/00—
IT3024274A 1973-12-12 1974-12-06 Procedimento di realizzazione di dispositivo semiconduttore di potenza a contatti pressati IT1030873B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7344329A FR2254879B1 (cg-RX-API-DMAC10.html) 1973-12-12 1973-12-12

Publications (1)

Publication Number Publication Date
IT1030873B true IT1030873B (it) 1979-04-10

Family

ID=9129097

Family Applications (1)

Application Number Title Priority Date Filing Date
IT3024274A IT1030873B (it) 1973-12-12 1974-12-06 Procedimento di realizzazione di dispositivo semiconduttore di potenza a contatti pressati

Country Status (6)

Country Link
BE (1) BE822433A (cg-RX-API-DMAC10.html)
DE (1) DE2458410C2 (cg-RX-API-DMAC10.html)
FR (1) FR2254879B1 (cg-RX-API-DMAC10.html)
GB (1) GB1488860A (cg-RX-API-DMAC10.html)
IT (1) IT1030873B (cg-RX-API-DMAC10.html)
NL (1) NL7416194A (cg-RX-API-DMAC10.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2431506C3 (de) * 1974-07-01 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen eines Thyristors
JPS5382278A (en) 1976-12-28 1978-07-20 Toshiba Corp Production of semiconductor device
FR2378354A1 (fr) 1977-01-19 1978-08-18 Alsthom Atlantique Procede de fabrication de semiconducteurs de puissance a contacts presses
GB2095904B (en) * 1981-03-23 1985-11-27 Gen Electric Semiconductor device with built-up low resistance contact and laterally conducting second contact
JPS5871633A (ja) * 1981-10-23 1983-04-28 Toshiba Corp 圧接型半導体装置
DE3232837A1 (de) * 1982-09-03 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer 2-ebenen-metallisierung fuer halbleiterbauelemente, insbesondere fuer leistungshalbleiterbauelemente wie thyristoren
JPS60132366A (ja) * 1983-12-21 1985-07-15 Toshiba Corp 半導体装置
EP0220469B1 (de) * 1985-10-15 1989-12-06 Siemens Aktiengesellschaft Leistungsthyristor
DE3840226A1 (de) * 1988-11-29 1990-05-31 Siemens Ag Verfahren zur herstellung von selbstjustierten metallisierungen fuer fet
DE19640242C2 (de) * 1996-09-30 2002-01-10 Infineon Technologies Ag Kathodenanordnung für GTO-Thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3525910A (en) * 1968-05-31 1970-08-25 Westinghouse Electric Corp Contact system for intricate geometry devices

Also Published As

Publication number Publication date
GB1488860A (en) 1977-10-12
NL7416194A (nl) 1975-06-16
DE2458410C2 (de) 1983-07-28
DE2458410A1 (de) 1975-06-19
FR2254879B1 (cg-RX-API-DMAC10.html) 1977-09-23
FR2254879A1 (cg-RX-API-DMAC10.html) 1975-07-11
BE822433A (fr) 1975-05-20

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19931229