BE813048A - Procede pour fabriquer des transistors a effet de champ en utilisant une getterisation selective - Google Patents

Procede pour fabriquer des transistors a effet de champ en utilisant une getterisation selective

Info

Publication number
BE813048A
BE813048A BE142635A BE142635A BE813048A BE 813048 A BE813048 A BE 813048A BE 142635 A BE142635 A BE 142635A BE 142635 A BE142635 A BE 142635A BE 813048 A BE813048 A BE 813048A
Authority
BE
Belgium
Prior art keywords
getterization
selective
effect transistors
manufacturing field
manufacturing
Prior art date
Application number
BE142635A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE813048A publication Critical patent/BE813048A/xx

Links

Classifications

    • H10P32/141—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/913—Active solid-state devices, e.g. transistors, solid-state diodes with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering
BE142635A 1973-03-30 1974-03-29 Procede pour fabriquer des transistors a effet de champ en utilisant une getterisation selective BE813048A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2316118A DE2316118C3 (de) 1973-03-30 1973-03-30 Verfahren zur Herstellung von Feldeffekttransistoren durch Anwendung einer selektiven Getterung

Publications (1)

Publication Number Publication Date
BE813048A true BE813048A (fr) 1974-07-15

Family

ID=5876584

Family Applications (1)

Application Number Title Priority Date Filing Date
BE142635A BE813048A (fr) 1973-03-30 1974-03-29 Procede pour fabriquer des transistors a effet de champ en utilisant une getterisation selective

Country Status (13)

Country Link
US (1) US3897625A (cg-RX-API-DMAC10.html)
JP (1) JPS5648986B2 (cg-RX-API-DMAC10.html)
AT (1) AT339378B (cg-RX-API-DMAC10.html)
BE (1) BE813048A (cg-RX-API-DMAC10.html)
CA (1) CA991317A (cg-RX-API-DMAC10.html)
CH (1) CH570041A5 (cg-RX-API-DMAC10.html)
DE (1) DE2316118C3 (cg-RX-API-DMAC10.html)
FR (1) FR2223839B1 (cg-RX-API-DMAC10.html)
GB (1) GB1460489A (cg-RX-API-DMAC10.html)
IT (1) IT1003883B (cg-RX-API-DMAC10.html)
LU (1) LU69732A1 (cg-RX-API-DMAC10.html)
NL (1) NL7404256A (cg-RX-API-DMAC10.html)
SE (1) SE394767B (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2801085A1 (de) * 1977-01-11 1978-07-13 Zaidan Hojin Handotai Kenkyu Statischer induktionstransistor
US4333224A (en) * 1978-04-24 1982-06-08 Buchanan Bobby L Method of fabricating polysilicon/silicon junction field effect transistors
US4380113A (en) * 1980-11-17 1983-04-19 Signetics Corporation Process for fabricating a high capacity memory cell
US4998146A (en) * 1989-05-24 1991-03-05 Xerox Corporation High voltage thin film transistor
FR2774509B1 (fr) * 1998-01-30 2001-11-16 Sgs Thomson Microelectronics Procede de depot d'une region de silicium monocristallin

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3490964A (en) * 1966-04-29 1970-01-20 Texas Instruments Inc Process of forming semiconductor devices by masking and diffusion
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate
US3837071A (en) * 1973-01-16 1974-09-24 Rca Corp Method of simultaneously making a sigfet and a mosfet

Also Published As

Publication number Publication date
CA991317A (en) 1976-06-15
NL7404256A (cg-RX-API-DMAC10.html) 1974-10-02
GB1460489A (en) 1977-01-06
SE394767B (sv) 1977-07-04
LU69732A1 (cg-RX-API-DMAC10.html) 1974-07-17
DE2316118B2 (cg-RX-API-DMAC10.html) 1975-04-03
FR2223839A1 (cg-RX-API-DMAC10.html) 1974-10-25
CH570041A5 (cg-RX-API-DMAC10.html) 1975-11-28
JPS49131082A (cg-RX-API-DMAC10.html) 1974-12-16
FR2223839B1 (cg-RX-API-DMAC10.html) 1978-02-10
DE2316118C3 (de) 1975-11-27
IT1003883B (it) 1976-06-10
JPS5648986B2 (cg-RX-API-DMAC10.html) 1981-11-19
DE2316118A1 (de) 1974-10-10
ATA222874A (de) 1977-02-15
US3897625A (en) 1975-08-05
AT339378B (de) 1977-10-10

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