|
JPS5340096B2
(enExample)
*
|
1972-02-10 |
1978-10-25 |
|
|
|
JPS562407B2
(enExample)
*
|
1973-01-31 |
1981-01-20 |
|
|
|
US3974002A
(en)
*
|
1974-06-10 |
1976-08-10 |
Bell Telephone Laboratories, Incorporated |
MBE growth: gettering contaminants and fabricating heterostructure junction lasers
|
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JPS516491A
(en)
*
|
1974-07-04 |
1976-01-20 |
Nippon Electric Co |
Handotaireezano seizohoho
|
|
US3936322A
(en)
*
|
1974-07-29 |
1976-02-03 |
International Business Machines Corporation |
Method of making a double heterojunction diode laser
|
|
US4010483A
(en)
*
|
1974-08-08 |
1977-03-01 |
International Telephone And Telegraph Corporation |
Current confining light emitting diode
|
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GB1564702A
(en)
*
|
1975-11-17 |
1980-04-10 |
Post Office |
Semiconductor devices
|
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JPS5277687A
(en)
*
|
1975-12-24 |
1977-06-30 |
Sharp Corp |
Manufacture of semiconductor laser element
|
|
JPS52116088A
(en)
*
|
1976-03-25 |
1977-09-29 |
Sharp Corp |
Preparation of semiconductor laser element
|
|
US4080617A
(en)
*
|
1976-06-09 |
1978-03-21 |
Northern Telecom Limited |
Optoelectronic devices with control of light propagation
|
|
US4138274A
(en)
*
|
1976-06-09 |
1979-02-06 |
Northern Telecom Limited |
Method of producing optoelectronic devices with control of light propagation by proton bombardment
|
|
US4047976A
(en)
*
|
1976-06-21 |
1977-09-13 |
Motorola, Inc. |
Method for manufacturing a high-speed semiconductor device
|
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US4124826A
(en)
*
|
1977-03-01 |
1978-11-07 |
Bell Telephone Laboratories, Incorporated |
Current confinement in semiconductor lasers
|
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JPS53988A
(en)
*
|
1977-07-22 |
1978-01-07 |
Sharp Corp |
Structure of semiconductor laser element
|
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NL7800583A
(nl)
*
|
1978-01-18 |
1979-07-20 |
Philips Nv |
Werkwijze voor het vervaardigen van een in- richting en inrichting vervaardigd met behulp van de werkwijze.
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JPS5837713B2
(ja)
*
|
1978-12-01 |
1983-08-18 |
富士通株式会社 |
半導体レ−ザ−装置の製造方法
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NL8003336A
(nl)
*
|
1979-06-12 |
1980-12-16 |
Dearnaley G |
Werkwijze voor de vervaardiging van een halfgeleider- inrichting.
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US5298787A
(en)
*
|
1979-08-10 |
1994-03-29 |
Massachusetts Institute Of Technology |
Semiconductor embedded layer technology including permeable base transistor
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(en)
*
|
1979-08-10 |
1983-04-05 |
Massachusetts Institute Of Technology |
Semiconductor embedded layer technology including permeable base transistor, fabrication method
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JPS56104488A
(en)
*
|
1980-01-23 |
1981-08-20 |
Hitachi Ltd |
Semiconductor laser element
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(en)
*
|
1980-06-02 |
1982-07-20 |
Bell Telephone Laboratories, Incorporated |
Semiconductor lasers with stable higher-order modes parallel to the junction plane
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(en)
*
|
1981-03-25 |
1985-05-07 |
At&T Bell Laboratories |
Method of forming current confinement channels in semiconductor devices
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US4447905A
(en)
*
|
1981-03-25 |
1984-05-08 |
Bell Telephone Laboratories, Incorporated |
Current confinement in semiconductor light emitting devices
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US4352835A
(en)
*
|
1981-07-01 |
1982-10-05 |
Western Electric Co., Inc. |
Masking portions of a substrate
|
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US4403397A
(en)
*
|
1981-07-13 |
1983-09-13 |
The United States Of America As Represented By The Secretary Of The Navy |
Method of making avalanche photodiodes
|
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US4391651A
(en)
*
|
1981-10-15 |
1983-07-05 |
The United States Of America As Represented By The Secretary Of The Navy |
Method of forming a hyperabrupt interface in a GaAs substrate
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JPS58162091A
(ja)
*
|
1982-03-23 |
1983-09-26 |
Nippon Telegr & Teleph Corp <Ntt> |
半導体レ−ザ素子及びその製造方法
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JPH0642488B2
(ja)
*
|
1982-05-10 |
1994-06-01 |
理化学研究所 |
イオン注入による結晶層界面の結晶組成制御方法
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JPS58219790A
(ja)
*
|
1982-06-14 |
1983-12-21 |
Sanyo Electric Co Ltd |
半導体発光素子
|
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US4523961A
(en)
*
|
1982-11-12 |
1985-06-18 |
At&T Bell Laboratories |
Method of improving current confinement in semiconductor lasers by inert ion bombardment
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US4539743A
(en)
*
|
1983-11-28 |
1985-09-10 |
At&T Bell Laboratories |
Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment
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US4599791A
(en)
*
|
1983-11-28 |
1986-07-15 |
At&T Bell Laboratories |
Method of making integrated circuits employing proton-bombarded AlGaAs layers
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US4597165A
(en)
*
|
1983-11-28 |
1986-07-01 |
At&T Bell Laboratories |
Method of making integrated circuits employing ion-bombarded InP layers
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JPH03276661A
(ja)
*
|
1990-03-26 |
1991-12-06 |
Mitsubishi Electric Corp |
絶縁領域の形成方法
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(en)
*
|
1991-03-29 |
1994-10-25 |
Electronic Decisions Inc. |
Soft proton isolation process for an acoustic charge transport integrated circuit
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US5804461A
(en)
*
|
1994-12-22 |
1998-09-08 |
Polaroid Corporation |
Laser diode with an ion-implant region
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DE19918651A1
(de)
*
|
1999-04-16 |
2000-10-19 |
Friedrich Schiller Uni Jena Bu |
Lichtemittierende Halbleiterdiode und Verfahren zu ihrer Herstellung
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EP1623467B1
(en)
*
|
2003-05-09 |
2016-12-07 |
Cree, Inc. |
LED fabrication via ion implant isolation
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US20050194584A1
(en)
*
|
2003-11-12 |
2005-09-08 |
Slater David B.Jr. |
LED fabrication via ion implant isolation
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US7592634B2
(en)
*
|
2004-05-06 |
2009-09-22 |
Cree, Inc. |
LED fabrication via ion implant isolation
|