JPS4865882A - - Google Patents

Info

Publication number
JPS4865882A
JPS4865882A JP11996372A JP11996372A JPS4865882A JP S4865882 A JPS4865882 A JP S4865882A JP 11996372 A JP11996372 A JP 11996372A JP 11996372 A JP11996372 A JP 11996372A JP S4865882 A JPS4865882 A JP S4865882A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11996372A
Other languages
Japanese (ja)
Other versions
JPS5117876B2 (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4865882A publication Critical patent/JPS4865882A/ja
Publication of JPS5117876B2 publication Critical patent/JPS5117876B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H10P30/206—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10P30/208—
    • H10P30/22—
    • H10W10/00—
    • H10W10/01—

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP11996372A 1971-12-02 1972-12-01 Expired JPS5117876B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00204222A US3824133A (en) 1971-12-02 1971-12-02 Fabrication of electrically insulating regions in optical devices by proton bombardment

Publications (2)

Publication Number Publication Date
JPS4865882A true JPS4865882A (enExample) 1973-09-10
JPS5117876B2 JPS5117876B2 (enExample) 1976-06-05

Family

ID=22757099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11996372A Expired JPS5117876B2 (enExample) 1971-12-02 1972-12-01

Country Status (6)

Country Link
US (1) US3824133A (enExample)
JP (1) JPS5117876B2 (enExample)
BE (1) BE791929A (enExample)
CA (1) CA962374A (enExample)
DE (1) DE2258444B2 (enExample)
GB (1) GB1365570A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4884650A (enExample) * 1972-02-10 1973-11-10
JPS516491A (en) * 1974-07-04 1976-01-20 Nippon Electric Co Handotaireezano seizohoho
JPS5277687A (en) * 1975-12-24 1977-06-30 Sharp Corp Manufacture of semiconductor laser element
JPS52116088A (en) * 1976-03-25 1977-09-29 Sharp Corp Preparation of semiconductor laser element
JPS53988A (en) * 1977-07-22 1978-01-07 Sharp Corp Structure of semiconductor laser element
JPS58162091A (ja) * 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ素子及びその製造方法
JPS58194333A (ja) * 1982-05-10 1983-11-12 Rikagaku Kenkyusho イオン注入による結晶層界面の結晶組成制御方法
JPS58219790A (ja) * 1982-06-14 1983-12-21 Sanyo Electric Co Ltd 半導体発光素子
JPH03276661A (ja) * 1990-03-26 1991-12-06 Mitsubishi Electric Corp 絶縁領域の形成方法

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562407B2 (enExample) * 1973-01-31 1981-01-20
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
US3936322A (en) * 1974-07-29 1976-02-03 International Business Machines Corporation Method of making a double heterojunction diode laser
US4010483A (en) * 1974-08-08 1977-03-01 International Telephone And Telegraph Corporation Current confining light emitting diode
GB1564702A (en) * 1975-11-17 1980-04-10 Post Office Semiconductor devices
US4080617A (en) * 1976-06-09 1978-03-21 Northern Telecom Limited Optoelectronic devices with control of light propagation
US4138274A (en) * 1976-06-09 1979-02-06 Northern Telecom Limited Method of producing optoelectronic devices with control of light propagation by proton bombardment
US4047976A (en) * 1976-06-21 1977-09-13 Motorola, Inc. Method for manufacturing a high-speed semiconductor device
US4124826A (en) * 1977-03-01 1978-11-07 Bell Telephone Laboratories, Incorporated Current confinement in semiconductor lasers
NL7800583A (nl) * 1978-01-18 1979-07-20 Philips Nv Werkwijze voor het vervaardigen van een in- richting en inrichting vervaardigd met behulp van de werkwijze.
JPS5837713B2 (ja) * 1978-12-01 1983-08-18 富士通株式会社 半導体レ−ザ−装置の製造方法
NL8003336A (nl) * 1979-06-12 1980-12-16 Dearnaley G Werkwijze voor de vervaardiging van een halfgeleider- inrichting.
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
JPS56104488A (en) * 1980-01-23 1981-08-20 Hitachi Ltd Semiconductor laser element
US4340967A (en) * 1980-06-02 1982-07-20 Bell Telephone Laboratories, Incorporated Semiconductor lasers with stable higher-order modes parallel to the junction plane
US4514896A (en) * 1981-03-25 1985-05-07 At&T Bell Laboratories Method of forming current confinement channels in semiconductor devices
US4447905A (en) * 1981-03-25 1984-05-08 Bell Telephone Laboratories, Incorporated Current confinement in semiconductor light emitting devices
US4352835A (en) * 1981-07-01 1982-10-05 Western Electric Co., Inc. Masking portions of a substrate
US4403397A (en) * 1981-07-13 1983-09-13 The United States Of America As Represented By The Secretary Of The Navy Method of making avalanche photodiodes
US4391651A (en) * 1981-10-15 1983-07-05 The United States Of America As Represented By The Secretary Of The Navy Method of forming a hyperabrupt interface in a GaAs substrate
US4523961A (en) * 1982-11-12 1985-06-18 At&T Bell Laboratories Method of improving current confinement in semiconductor lasers by inert ion bombardment
US4539743A (en) * 1983-11-28 1985-09-10 At&T Bell Laboratories Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment
US4599791A (en) * 1983-11-28 1986-07-15 At&T Bell Laboratories Method of making integrated circuits employing proton-bombarded AlGaAs layers
US4597165A (en) * 1983-11-28 1986-07-01 At&T Bell Laboratories Method of making integrated circuits employing ion-bombarded InP layers
US5358877A (en) * 1991-03-29 1994-10-25 Electronic Decisions Inc. Soft proton isolation process for an acoustic charge transport integrated circuit
US5804461A (en) * 1994-12-22 1998-09-08 Polaroid Corporation Laser diode with an ion-implant region
DE19918651A1 (de) * 1999-04-16 2000-10-19 Friedrich Schiller Uni Jena Bu Lichtemittierende Halbleiterdiode und Verfahren zu ihrer Herstellung
EP1623467B1 (en) * 2003-05-09 2016-12-07 Cree, Inc. LED fabrication via ion implant isolation
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4884650A (enExample) * 1972-02-10 1973-11-10
JPS516491A (en) * 1974-07-04 1976-01-20 Nippon Electric Co Handotaireezano seizohoho
JPS5277687A (en) * 1975-12-24 1977-06-30 Sharp Corp Manufacture of semiconductor laser element
JPS52116088A (en) * 1976-03-25 1977-09-29 Sharp Corp Preparation of semiconductor laser element
JPS53988A (en) * 1977-07-22 1978-01-07 Sharp Corp Structure of semiconductor laser element
JPS58162091A (ja) * 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ素子及びその製造方法
JPS58194333A (ja) * 1982-05-10 1983-11-12 Rikagaku Kenkyusho イオン注入による結晶層界面の結晶組成制御方法
JPS58219790A (ja) * 1982-06-14 1983-12-21 Sanyo Electric Co Ltd 半導体発光素子
JPH03276661A (ja) * 1990-03-26 1991-12-06 Mitsubishi Electric Corp 絶縁領域の形成方法

Also Published As

Publication number Publication date
BE791929A (fr) 1973-03-16
DE2258444A1 (de) 1973-06-07
AU4948672A (en) 1973-05-24
JPS5117876B2 (enExample) 1976-06-05
US3824133A (en) 1974-07-16
DE2258444B2 (de) 1975-09-18
CA962374A (en) 1975-02-04
GB1365570A (en) 1974-09-04

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