BE781067A - MELTING PROCESS BY ZONES WITHOUT CRUCIBLE - Google Patents

MELTING PROCESS BY ZONES WITHOUT CRUCIBLE

Info

Publication number
BE781067A
BE781067A BE781067A BE781067A BE781067A BE 781067 A BE781067 A BE 781067A BE 781067 A BE781067 A BE 781067A BE 781067 A BE781067 A BE 781067A BE 781067 A BE781067 A BE 781067A
Authority
BE
Belgium
Prior art keywords
crucible
zones
melting process
melting
Prior art date
Application number
BE781067A
Other languages
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE781067A publication Critical patent/BE781067A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE781067A 1971-03-22 1972-03-22 MELTING PROCESS BY ZONES WITHOUT CRUCIBLE BE781067A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2113720A DE2113720C3 (en) 1971-03-22 1971-03-22 Process for diameter control in crucible-free zone melting of semiconductor rods

Publications (1)

Publication Number Publication Date
BE781067A true BE781067A (en) 1972-07-17

Family

ID=5802339

Family Applications (1)

Application Number Title Priority Date Filing Date
BE781067A BE781067A (en) 1971-03-22 1972-03-22 MELTING PROCESS BY ZONES WITHOUT CRUCIBLE

Country Status (11)

Country Link
US (1) US3757071A (en)
JP (1) JPS5233042B1 (en)
BE (1) BE781067A (en)
CA (1) CA970255A (en)
CH (1) CH538885A (en)
DE (1) DE2113720C3 (en)
DK (1) DK140822B (en)
FR (1) FR2130453B1 (en)
GB (1) GB1373718A (en)
IT (1) IT962055B (en)
NL (1) NL7115341A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2332968C3 (en) * 1973-06-28 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Device for controlling the diameter of a semiconductor rod
DE2518853C3 (en) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for separating elemental silicon from a reaction gas
US4185233A (en) * 1978-03-30 1980-01-22 General Electric Company High efficiency ballast system for gaseous discharge lamps
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
JPH0651599B2 (en) * 1987-12-05 1994-07-06 信越半導体株式会社 Floating band control method
IL163974A0 (en) * 2003-09-10 2005-12-18 Dana Corp Method for monitoring the performance of a magnetic pulse forming or welding process
DE102012108009B4 (en) * 2012-08-30 2016-09-01 Topsil Semiconductor Materials A/S Model predictive control of the zone melting process
JP2014240338A (en) * 2013-06-12 2014-12-25 信越半導体株式会社 Method of producing semiconductor single crystal rod
JP6642234B2 (en) * 2016-04-20 2020-02-05 株式会社Sumco Method and apparatus for producing single crystal

Also Published As

Publication number Publication date
IT962055B (en) 1973-12-20
GB1373718A (en) 1974-11-13
DE2113720A1 (en) 1972-09-28
CA970255A (en) 1975-07-01
CH538885A (en) 1973-07-15
NL7115341A (en) 1972-09-26
DK140822B (en) 1979-11-26
JPS5233042B1 (en) 1977-08-25
FR2130453A1 (en) 1972-11-03
DE2113720B2 (en) 1980-01-10
US3757071A (en) 1973-09-04
DK140822C (en) 1980-05-12
FR2130453B1 (en) 1975-04-11
DE2113720C3 (en) 1980-09-11

Similar Documents

Publication Publication Date Title
SE389096B (en) PROCEDURE FOR MELTING GLASS QUANTITIES
BE781067A (en) MELTING PROCESS BY ZONES WITHOUT CRUCIBLE
BE795683A (en) PROCESS FOR THE PREPARATION OF 2,6-DICHLOROPYRIDINE
BE787668A (en) CRUCIBLE-FREE ZONE MELTING DEVICE
BE780308A (en) FRUCTOSE CRYSTALLIZATION PROCESS
BE798934A (en) CRYSTALLIZATION PROCESS
BE791800A (en) 2-MERCAPTOBENZOTHIAZOLE PREPARATION PROCESS
BE786329A (en) POLYURETHANNES PREPARATION PROCESS
BE794781A (en) HIGH MELTING POINT GLASS SHAPING PROCESS
FR2315993A1 (en) MELTING PROCESS BY ZONES WITHOUT CRUCIBLE
BE807674R (en) MELTING PROCESS BY ZONE WITHOUT CRUCIBLE OF A SEMICONDUCTOR BAR
RO68218A (en) PROCESS FOR REALIZING PURE CRYSTALLINE PENICILLINACYLASE
BE795488A (en) MELTING PROCESS BY ZONES WITHOUT CRUCIBLE OF A SEMICONDUCTOR BAR
BE809015A (en) PROCESS FOR THE PRODUCTION OF CARBON SNOW
BE798130A (en) VINCAMINE PREPARATION PROCESS
BE796525A (en) PROCESS FOR THE PREPARATION OF CARBON FILAMENTS
CH554334A (en) PROCESS FOR THE PREPARATION OF TETRAHYDROCARBAZOLE.
BE787990A (en) PEROXYDIESTERS PREPARATION PROCESS
BE774008A (en) PROCESS AND INSTALLATION OF FUSION BY ZONES WITHOUT CRUCIBLE
BE781492A (en) BETA-AMYLASE PRODUCTION PROCESS
BE802933A (en) FUSION STEEL NITRURATION PROCESS
BE774097A (en) HIGH QUALITY FERRO-SILICON FUSION PROCESS
BE786177R (en) PREPARATION PROCESS
BE792486R (en) PREPARATION PROCESS
BE807428A (en) CRYSTALLIZED BERYLLO-ALUMINO-SILICATES AND PROCESS FOR THEIR PREPARATION