FR2130453A1 - - Google Patents

Info

Publication number
FR2130453A1
FR2130453A1 FR7209619A FR7209619A FR2130453A1 FR 2130453 A1 FR2130453 A1 FR 2130453A1 FR 7209619 A FR7209619 A FR 7209619A FR 7209619 A FR7209619 A FR 7209619A FR 2130453 A1 FR2130453 A1 FR 2130453A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7209619A
Other languages
French (fr)
Other versions
FR2130453B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2130453A1 publication Critical patent/FR2130453A1/fr
Application granted granted Critical
Publication of FR2130453B1 publication Critical patent/FR2130453B1/fr
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • C30B13/30Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
FR7209619A 1971-03-22 1972-03-20 Expired FR2130453B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2113720A DE2113720C3 (en) 1971-03-22 1971-03-22 Process for diameter control in crucible-free zone melting of semiconductor rods

Publications (2)

Publication Number Publication Date
FR2130453A1 true FR2130453A1 (en) 1972-11-03
FR2130453B1 FR2130453B1 (en) 1975-04-11

Family

ID=5802339

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7209619A Expired FR2130453B1 (en) 1971-03-22 1972-03-20

Country Status (11)

Country Link
US (1) US3757071A (en)
JP (1) JPS5233042B1 (en)
BE (1) BE781067A (en)
CA (1) CA970255A (en)
CH (1) CH538885A (en)
DE (1) DE2113720C3 (en)
DK (1) DK140822B (en)
FR (1) FR2130453B1 (en)
GB (1) GB1373718A (en)
IT (1) IT962055B (en)
NL (1) NL7115341A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0288605A2 (en) * 1987-04-27 1988-11-02 Shin-Etsu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2332968C3 (en) * 1973-06-28 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Device for controlling the diameter of a semiconductor rod
DE2518853C3 (en) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for separating elemental silicon from a reaction gas
US4185233A (en) * 1978-03-30 1980-01-22 General Electric Company High efficiency ballast system for gaseous discharge lamps
JPH0651599B2 (en) * 1987-12-05 1994-07-06 信越半導体株式会社 Floating band control method
IL163974A0 (en) * 2003-09-10 2005-12-18 Dana Corp Method for monitoring the performance of a magnetic pulse forming or welding process
DE102012108009B4 (en) * 2012-08-30 2016-09-01 Topsil Semiconductor Materials A/S Model predictive control of the zone melting process
JP2014240338A (en) * 2013-06-12 2014-12-25 信越半導体株式会社 Method of producing semiconductor single crystal rod
JP6642234B2 (en) * 2016-04-20 2020-02-05 株式会社Sumco Method and apparatus for producing single crystal

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0288605A2 (en) * 1987-04-27 1988-11-02 Shin-Etsu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
EP0288605A3 (en) * 1987-04-27 1988-11-23 Shinetsu Handotai Kk Method of and apparatus for controlling floating zone of semiconductor rod
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod

Also Published As

Publication number Publication date
CA970255A (en) 1975-07-01
NL7115341A (en) 1972-09-26
GB1373718A (en) 1974-11-13
US3757071A (en) 1973-09-04
DE2113720B2 (en) 1980-01-10
DK140822B (en) 1979-11-26
DE2113720C3 (en) 1980-09-11
JPS5233042B1 (en) 1977-08-25
DE2113720A1 (en) 1972-09-28
CH538885A (en) 1973-07-15
FR2130453B1 (en) 1975-04-11
IT962055B (en) 1973-12-20
BE781067A (en) 1972-07-17
DK140822C (en) 1980-05-12

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Legal Events

Date Code Title Description
ST Notification of lapse