DK140822B - Procedure for crucible-free zone melting. - Google Patents

Procedure for crucible-free zone melting.

Info

Publication number
DK140822B
DK140822B DK132072AA DK132072A DK140822B DK 140822 B DK140822 B DK 140822B DK 132072A A DK132072A A DK 132072AA DK 132072 A DK132072 A DK 132072A DK 140822 B DK140822 B DK 140822B
Authority
DK
Denmark
Prior art keywords
crucible
procedure
free zone
zone melting
melting
Prior art date
Application number
DK132072AA
Other languages
Danish (da)
Other versions
DK140822C (en
Inventor
Hans Stut
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK140822B publication Critical patent/DK140822B/en
Application granted granted Critical
Publication of DK140822C publication Critical patent/DK140822C/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK132072AA 1971-03-22 1972-03-21 Procedure for crucible-free zone melting. DK140822B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2113720A DE2113720C3 (en) 1971-03-22 1971-03-22 Process for diameter control in crucible-free zone melting of semiconductor rods

Publications (2)

Publication Number Publication Date
DK140822B true DK140822B (en) 1979-11-26
DK140822C DK140822C (en) 1980-05-12

Family

ID=5802339

Family Applications (1)

Application Number Title Priority Date Filing Date
DK132072AA DK140822B (en) 1971-03-22 1972-03-21 Procedure for crucible-free zone melting.

Country Status (11)

Country Link
US (1) US3757071A (en)
JP (1) JPS5233042B1 (en)
BE (1) BE781067A (en)
CA (1) CA970255A (en)
CH (1) CH538885A (en)
DE (1) DE2113720C3 (en)
DK (1) DK140822B (en)
FR (1) FR2130453B1 (en)
GB (1) GB1373718A (en)
IT (1) IT962055B (en)
NL (1) NL7115341A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2332968C3 (en) * 1973-06-28 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Device for controlling the diameter of a semiconductor rod
DE2518853C3 (en) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for separating elemental silicon from a reaction gas
US4185233A (en) * 1978-03-30 1980-01-22 General Electric Company High efficiency ballast system for gaseous discharge lamps
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
JPH0651599B2 (en) * 1987-12-05 1994-07-06 信越半導体株式会社 Floating band control method
IL163974A0 (en) * 2003-09-10 2005-12-18 Dana Corp Method for monitoring the performance of a magnetic pulse forming or welding process
DE102012108009B4 (en) * 2012-08-30 2016-09-01 Topsil Semiconductor Materials A/S Model predictive control of the zone melting process
JP2014240338A (en) * 2013-06-12 2014-12-25 信越半導体株式会社 Method of producing semiconductor single crystal rod
JP6642234B2 (en) * 2016-04-20 2020-02-05 株式会社Sumco Method and apparatus for producing single crystal

Also Published As

Publication number Publication date
IT962055B (en) 1973-12-20
GB1373718A (en) 1974-11-13
DE2113720A1 (en) 1972-09-28
CA970255A (en) 1975-07-01
CH538885A (en) 1973-07-15
NL7115341A (en) 1972-09-26
BE781067A (en) 1972-07-17
JPS5233042B1 (en) 1977-08-25
FR2130453A1 (en) 1972-11-03
DE2113720B2 (en) 1980-01-10
US3757071A (en) 1973-09-04
DK140822C (en) 1980-05-12
FR2130453B1 (en) 1975-04-11
DE2113720C3 (en) 1980-09-11

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Legal Events

Date Code Title Description
PBP Patent lapsed