BE807674R - MELTING PROCESS BY ZONE WITHOUT CRUCIBLE OF A SEMICONDUCTOR BAR - Google Patents
MELTING PROCESS BY ZONE WITHOUT CRUCIBLE OF A SEMICONDUCTOR BARInfo
- Publication number
- BE807674R BE807674R BE138054A BE138054A BE807674R BE 807674 R BE807674 R BE 807674R BE 138054 A BE138054 A BE 138054A BE 138054 A BE138054 A BE 138054A BE 807674 R BE807674 R BE 807674R
- Authority
- BE
- Belgium
- Prior art keywords
- crucible
- zone
- melting process
- semiconductor bar
- semiconductor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- General Induction Heating (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19732332968 DE2332968C3 (en) | 1973-06-28 | 1973-06-28 | Device for controlling the diameter of a semiconductor rod |
Publications (1)
Publication Number | Publication Date |
---|---|
BE807674R true BE807674R (en) | 1974-03-15 |
Family
ID=5885367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE138054A BE807674R (en) | 1973-06-28 | 1973-11-22 | MELTING PROCESS BY ZONE WITHOUT CRUCIBLE OF A SEMICONDUCTOR BAR |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5321728B2 (en) |
BE (1) | BE807674R (en) |
DE (1) | DE2332968C3 (en) |
NL (1) | NL7314687A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2529329C3 (en) * | 1975-07-01 | 1982-06-16 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Process for crucible zone melting |
JPS55126416U (en) * | 1979-02-28 | 1980-09-06 | ||
JPS56100968A (en) * | 1980-01-12 | 1981-08-13 | Kohkoku Chem Ind | Heat insulation executing method for floor |
JPS56148413U (en) * | 1980-04-05 | 1981-11-07 | ||
JPH0651599B2 (en) * | 1987-12-05 | 1994-07-06 | 信越半導体株式会社 | Floating band control method |
JP2517550Y2 (en) * | 1989-12-28 | 1996-11-20 | 神鋼電機株式会社 | Power supply control device for melting furnace |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE631568A (en) * | 1962-04-27 | |||
DE2113720C3 (en) * | 1971-03-22 | 1980-09-11 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Process for diameter control in crucible-free zone melting of semiconductor rods |
-
1973
- 1973-06-28 DE DE19732332968 patent/DE2332968C3/en not_active Expired
- 1973-10-25 NL NL7314687A patent/NL7314687A/xx unknown
- 1973-11-22 BE BE138054A patent/BE807674R/en active
-
1974
- 1974-06-28 JP JP7420074A patent/JPS5321728B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2332968C3 (en) | 1981-12-10 |
JPS5038147A (en) | 1975-04-09 |
DE2332968A1 (en) | 1975-01-16 |
JPS5321728B2 (en) | 1978-07-04 |
DE2332968B2 (en) | 1981-03-12 |
NL7314687A (en) | 1974-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BE800346A (en) | CONTINUOUS PROCESS FOR THE REFINING OF SULPHIDE ORES, | |
RO86236A (en) | PROCESS FOR OBTAINING THERMOPLASTIC TUBULAR ARTICLES | |
RO70162A (en) | PROCESS FOR OBTAINING 7-ALCOXY-5-METHYL-ISOFLAVONE DERIVATIVES | |
BE814094A (en) | CONTINUOUS STEEL CASTING PROCESS | |
RO64649A (en) | PROCESS FOR THE PREPARATION OF SUBSTITUTED FLUORALCOXY-PHENYL NITROGEN CONTAINING HETEROCYCLES | |
RO62657A (en) | CONTINUOUS PROCESS FOR MANUFACTURING A | |
BE807674R (en) | MELTING PROCESS BY ZONE WITHOUT CRUCIBLE OF A SEMICONDUCTOR BAR | |
BE820297A (en) | IMPROVED PROCESS FOR STEEL PRODUCTION | |
BE857924A (en) | PROCESS FOR THE PURIFICATION OF ORGANIC PRODUCTS WITH A HIGH MELTING POINT | |
BE814093A (en) | CONTINUOUS STEEL CASTING PROCESS | |
RO72583A (en) | PROCESS FOR ELECTROETAMING METALS | |
BE781067A (en) | MELTING PROCESS BY ZONES WITHOUT CRUCIBLE | |
BE831924R (en) | METHOD AND DEVICE FOR MELTING BY ZONES WITHOUT CRUCIBLE OF A SEMICONDUCTOR CRYSTALLINE BAR | |
BE816506A (en) | METHOD AND DEVICE FOR MELTING BY ZONES WITHOUT CRUCIBLE OF A SEMICONDUCTOR CRYSTALLINE BAR | |
BE795488A (en) | MELTING PROCESS BY ZONES WITHOUT CRUCIBLE OF A SEMICONDUCTOR BAR | |
BE802246A (en) | PROCESS FOR THE PROTECTION OF ELEMENTS IN ELECTRO-CONDUCTIVE MATERIAL IN FLUORIDE BATHS CROSSED BY A DIRECT CURRENT | |
BE822579A (en) | METHOD FOR ADJUSTING THE DIMENSION OF THE MELTING ZONE OF A CONTINUOUS MELTING OVEN | |
BE816209A (en) | PROCESS FOR OBTAINING EPSILON-CAPROLACTAM | |
BE811354A (en) | PROCESS FOR MANUFACTURING A WELD | |
RO72138A (en) | PROCESS FOR OBTAINING NON-CALCINATED REFRACTORY BASIC MASSES | |
BE813906A (en) | PROCESS FOR INFLUENCING THE ALLURE OF RADIAL RESISTANCE IN A SEMICONDUCTOR SINGLE CRYSTALLINE BAR DURING A MELTING BY ZONES WITHOUT CRUCIBLE | |
BE861593A (en) | IMPROVED PROCESS FOR THE CONTINUOUS EXTRACTION OF CAPROLACTAM BY BENZENE | |
BE843542A (en) | MELTING PROCESS BY ZONE WITHOUT CRUCIBLE | |
FR2002994A1 (en) | PROCESS FOR SUPPORTING A CONTINUOUSLY CAST INGOT | |
BE807275R (en) | PROCESS FOR THE PRODUCTION OF HIGH PURE NICKEL FROM SULPHIDE CONCENTRATES |