BE771608A - Transistor a effet de champ et procede pour le former - Google Patents

Transistor a effet de champ et procede pour le former

Info

Publication number
BE771608A
BE771608A BE771608A BE771608A BE771608A BE 771608 A BE771608 A BE 771608A BE 771608 A BE771608 A BE 771608A BE 771608 A BE771608 A BE 771608A BE 771608 A BE771608 A BE 771608A
Authority
BE
Belgium
Prior art keywords
forming
field
effect transistor
transistor
effect
Prior art date
Application number
BE771608A
Other languages
English (en)
French (fr)
Inventor
R R Burgess
E M Cheskis
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of BE771608A publication Critical patent/BE771608A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83135—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different gate conductor materials or different gate conductor implants
BE771608A 1970-08-21 1971-08-20 Transistor a effet de champ et procede pour le former BE771608A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6585870A 1970-08-21 1970-08-21
US6585970A 1970-08-21 1970-08-21

Publications (1)

Publication Number Publication Date
BE771608A true BE771608A (fr) 1972-02-21

Family

ID=26746091

Family Applications (1)

Application Number Title Priority Date Filing Date
BE771608A BE771608A (fr) 1970-08-21 1971-08-20 Transistor a effet de champ et procede pour le former

Country Status (5)

Country Link
AU (1) AU3258271A (cs)
BE (1) BE771608A (cs)
DE (2) DE2142050A1 (cs)
FR (1) FR2103427A1 (cs)
NL (1) NL7111459A (cs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1360770A (en) * 1972-05-30 1974-07-24 Westinghouse Electric Corp N-channel mos transistor
US3943542A (en) * 1974-11-06 1976-03-09 International Business Machines, Corporation High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
US5159260A (en) * 1978-03-08 1992-10-27 Hitachi, Ltd. Reference voltage generator device
CH657712A5 (de) * 1978-03-08 1986-09-15 Hitachi Ltd Referenzspannungserzeuger.
JPS55132055A (en) * 1979-03-30 1980-10-14 Nec Corp Mos integrated circuit
US5260593A (en) * 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction

Also Published As

Publication number Publication date
NL7111459A (cs) 1972-02-23
DE2142050A1 (de) 1972-03-30
FR2103427A1 (cs) 1972-04-14
DE7132084U (de) 1972-01-05
AU3258271A (en) 1973-02-22

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