BE707208A - - Google Patents

Info

Publication number
BE707208A
BE707208A BE707208DA BE707208A BE 707208 A BE707208 A BE 707208A BE 707208D A BE707208D A BE 707208DA BE 707208 A BE707208 A BE 707208A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE707208A publication Critical patent/BE707208A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289Lateral isolation by air gap
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/115Orientation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
BE707208D 1966-12-01 1967-11-28 BE707208A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59847766A 1966-12-01 1966-12-01

Publications (1)

Publication Number Publication Date
BE707208A true BE707208A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1968-04-01

Family

ID=24395696

Family Applications (1)

Application Number Title Priority Date Filing Date
BE707208D BE707208A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1966-12-01 1967-11-28

Country Status (8)

Country Link
US (1) US3493820A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS507429B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE707208A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH474851A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE6606541U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1143148A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL152117B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE342525B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4180422A (en) * 1969-02-03 1979-12-25 Raytheon Company Method of making semiconductor diodes
US3806771A (en) * 1969-05-05 1974-04-23 Gen Electric Smoothly beveled semiconductor device with thick glass passivant
DE2120388A1 (de) * 1970-04-28 1971-12-16 Agency Ind Science Techn Verbindungshalbleitervorrichtung
US3670396A (en) * 1971-04-12 1972-06-20 Us Navy Method of making a circuit assembly
US3888708A (en) * 1972-02-17 1975-06-10 Kensall D Wise Method for forming regions of predetermined thickness in silicon
US4187516A (en) * 1972-04-10 1980-02-05 Raytheon Company Semiconductor integrated circuits
US3979237A (en) * 1972-04-24 1976-09-07 Harris Corporation Device isolation in integrated circuits
DE2432544C3 (de) * 1974-07-04 1978-11-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Als Halbleiterschaltung ausgebildetes Bauelement mit einem dielektrischen Träger sowie Verfahren zu seiner Herstellung
DE2753207C2 (de) * 1976-11-30 1989-10-12 Mitsubishi Denki K.K., Tokio/Tokyo Verfahren zum Herstellen von Halbleiterbauelementen
JPS5386026U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1976-12-16 1978-07-15
US4312117A (en) * 1977-09-01 1982-01-26 Raytheon Company Integrated test and assembly device
US4257061A (en) * 1977-10-17 1981-03-17 John Fluke Mfg. Co., Inc. Thermally isolated monolithic semiconductor die
DE3137695A1 (de) * 1981-09-22 1983-04-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem mehrschichten-halbleiterkoerper mit pnpn-schichtfolge und verfahren zu seiner herstellung
US4381341A (en) * 1982-02-01 1983-04-26 Westinghouse Electric Corp. Two stage etching process for through the substrate contacts
US4613891A (en) * 1984-02-17 1986-09-23 At&T Bell Laboratories Packaging microminiature devices
US4889832A (en) * 1987-12-23 1989-12-26 Texas Instruments Incorporated Method of fabricating an integrated circuit with metal interconnecting layers above and below active circuitry
US4918505A (en) * 1988-07-19 1990-04-17 Tektronix, Inc. Method of treating an integrated circuit to provide a temperature sensor that is integral therewith
DE4401782C2 (de) * 1994-01-21 2001-08-02 Angew Solarenergie Ase Gmbh Verfahren zur Herstellung eines lokal flachen Emitters zwischen den Kontaktfingern einer Solarzelle
EP1251557B1 (en) * 1994-07-26 2007-01-03 Koninklijke Philips Electronics N.V. Method of manufacturing semiconductor devices and semiconductor device
US20020071169A1 (en) 2000-02-01 2002-06-13 Bowers John Edward Micro-electro-mechanical-system (MEMS) mirror device
US6753638B2 (en) * 2000-02-03 2004-06-22 Calient Networks, Inc. Electrostatic actuator for micromechanical systems
US6585383B2 (en) 2000-05-18 2003-07-01 Calient Networks, Inc. Micromachined apparatus for improved reflection of light
US6560384B1 (en) 2000-06-01 2003-05-06 Calient Networks, Inc. Optical switch having mirrors arranged to accommodate freedom of movement
WO2001094253A2 (en) * 2000-06-02 2001-12-13 Calient Networks, Inc. Bulk silicon structures with thin film flexible elements
US6825967B1 (en) 2000-09-29 2004-11-30 Calient Networks, Inc. Shaped electrodes for micro-electro-mechanical-system (MEMS) devices to improve actuator performance and methods for fabricating the same
US6544863B1 (en) 2001-08-21 2003-04-08 Calient Networks, Inc. Method of fabricating semiconductor wafers having multiple height subsurface layers
US7728339B1 (en) 2002-05-03 2010-06-01 Calient Networks, Inc. Boundary isolation for microelectromechanical devices
US8335077B2 (en) * 2008-01-31 2012-12-18 Hewlett-Packard Development Company, L.P. Insulating aperture in printed circuit boards
US12103843B2 (en) 2021-01-20 2024-10-01 Calient.Ai Inc. MEMS mirror arrays with reduced crosstalk

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3313013A (en) * 1960-08-15 1967-04-11 Fairchild Camera Instr Co Method of making solid-state circuitry
NL134170C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1963-12-17 1900-01-01
US3396312A (en) * 1965-06-30 1968-08-06 Texas Instruments Inc Air-isolated integrated circuits
US3426252A (en) * 1966-05-03 1969-02-04 Bell Telephone Labor Inc Semiconductive device including beam leads

Also Published As

Publication number Publication date
DE1614393A1 (de) 1970-05-27
NL152117B (nl) 1977-01-17
GB1143148A (en) 1969-02-19
JPS507429B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-03-25
CH474851A (de) 1969-06-30
DE6606541U (de) 1970-11-05
SE342525B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-02-07
NL6716314A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1968-06-04
US3493820A (en) 1970-02-03

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Legal Events

Date Code Title Description
RE20 Patent expired

Owner name: RAYTHEON CY

Effective date: 19871128