BE559732A - - Google Patents

Info

Publication number
BE559732A
BE559732A BE559732DA BE559732A BE 559732 A BE559732 A BE 559732A BE 559732D A BE559732D A BE 559732DA BE 559732 A BE559732 A BE 559732A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE559732A publication Critical patent/BE559732A/xx

Links

Classifications

    • H10P95/00—
    • H10P95/50—
    • H10W70/69—
    • H10W72/071—
    • H10W76/18—
    • H10W76/60—
    • H10W99/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45605—Gallium (Ga) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45609—Indium (In) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/4562—Antimony (Sb) as principal constituent
    • H10W72/0711—
    • H10W72/07118—
    • H10W72/07532—
    • H10W72/522—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5449—
    • H10W72/552—
    • H10W72/5522—
    • H10W72/5524—
    • H10W72/5525—
    • H10W72/555—
    • H10W72/59—
    • H10W72/932—
    • H10W72/952—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/903—Metal to nonmetal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
BE559732D 1956-10-31 BE559732A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US619639A US3006067A (en) 1956-10-31 1956-10-31 Thermo-compression bonding of metal to semiconductors, and the like

Publications (1)

Publication Number Publication Date
BE559732A true BE559732A (cg-RX-API-DMAC10.html) 1900-01-01

Family

ID=24482720

Family Applications (1)

Application Number Title Priority Date Filing Date
BE559732D BE559732A (cg-RX-API-DMAC10.html) 1956-10-31

Country Status (7)

Country Link
US (1) US3006067A (cg-RX-API-DMAC10.html)
BE (1) BE559732A (cg-RX-API-DMAC10.html)
CH (1) CH351342A (cg-RX-API-DMAC10.html)
DE (1) DE1127000C2 (cg-RX-API-DMAC10.html)
FR (1) FR1179416A (cg-RX-API-DMAC10.html)
GB (2) GB881832A (cg-RX-API-DMAC10.html)
NL (2) NL219101A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1190107B (de) * 1961-09-19 1965-04-01 Siemens Ag Thermokompressionsverfahren zum Anbringen der Kontaktelektrode oder Zuleitung eines Halbleiterbauelements

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3131459A (en) * 1959-11-09 1964-05-05 Corning Glass Works Method of bonding absorbing material to a delay line
US3131460A (en) * 1959-11-09 1964-05-05 Corning Glass Works Method of bonding a crystal to a delay line
US3136050A (en) * 1959-11-17 1964-06-09 Texas Instruments Inc Container closure method
US3179785A (en) * 1960-09-20 1965-04-20 Hughes Aircraft Co Apparatus for thermo-compression bonding
US3125803A (en) * 1960-10-24 1964-03-24 Terminals
NL270517A (cg-RX-API-DMAC10.html) * 1960-11-16
NL275554A (cg-RX-API-DMAC10.html) * 1961-04-19 1900-01-01
DE1172378B (de) * 1961-07-14 1964-06-18 Siemens Ag Verfahren zur Herstellung einer elektrisch unsymmetrisch leitenden Halbleiteranordnung
NL122607C (cg-RX-API-DMAC10.html) * 1961-07-26 1900-01-01
BE621898A (cg-RX-API-DMAC10.html) * 1961-08-30 1900-01-01
DE1251871B (cg-RX-API-DMAC10.html) * 1962-02-06 1900-01-01
NL292051A (cg-RX-API-DMAC10.html) * 1962-04-27
US3217401A (en) * 1962-06-08 1965-11-16 Transitron Electronic Corp Method of attaching metallic heads to silicon layers of semiconductor devices
US3271625A (en) * 1962-08-01 1966-09-06 Signetics Corp Electronic package assembly
US3304595A (en) * 1962-11-26 1967-02-21 Nippon Electric Co Method of making a conductive connection to a semiconductor device electrode
US3356914A (en) * 1963-05-03 1967-12-05 Westinghouse Electric Corp Integrated semiconductor rectifier assembly
US3296692A (en) * 1963-09-13 1967-01-10 Bell Telephone Labor Inc Thermocompression wire attachments to quartz crystals
US3310858A (en) * 1963-12-12 1967-03-28 Bell Telephone Labor Inc Semiconductor diode and method of making
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
US3286340A (en) * 1964-02-28 1966-11-22 Philco Corp Fabrication of semiconductor units
GB1106163A (en) * 1964-03-02 1968-03-13 Post Office Improvements in or relating to the bonding of metals to semiconductor, metallic or non-metallic surfaces
DE1282190B (de) * 1964-03-12 1968-11-07 Kabusihiki Kaisha Hitachi Seis Verfahren zum Herstellen von Transistoren
DE1514304A1 (de) * 1964-04-03 1969-05-14 Philco Ford Corp Halbleiteranordnung und Herstellungsverfahren hierfuer
US3362064A (en) * 1964-05-08 1968-01-09 Space Sciences Inc Measuring device
US3380155A (en) * 1965-05-12 1968-04-30 Sprague Electric Co Production of contact pads for semiconductors
US3373481A (en) * 1965-06-22 1968-03-19 Sperry Rand Corp Method of electrically interconnecting conductors
US3442003A (en) * 1965-07-26 1969-05-06 Teledyne Inc Method for interconnecting thin films
US3461542A (en) * 1966-01-06 1969-08-19 Western Electric Co Bonding leads to quartz crystals
US3523222A (en) * 1966-09-15 1970-08-04 Texas Instruments Inc Semiconductive contacts
US3465421A (en) * 1966-12-20 1969-09-09 American Standard Inc High temperature bonding to germanium
US3442007A (en) * 1966-12-29 1969-05-06 Kewanee Oil Co Process of attaching a collector grid to a photovoltaic cell
US3483610A (en) * 1967-06-08 1969-12-16 Bell Telephone Labor Inc Thermocompression bonding of foil leads
GB1256518A (cg-RX-API-DMAC10.html) * 1968-11-30 1971-12-08
US3623649A (en) * 1969-06-09 1971-11-30 Gen Motors Corp Wedge bonding tool for the attachment of semiconductor leads
US3641660A (en) * 1969-06-30 1972-02-15 Texas Instruments Inc The method of ball bonding with an automatic semiconductor bonding machine
US3754674A (en) * 1970-03-03 1973-08-28 Allis Chalmers Mfg Co Means for providing hermetic seals
US4402447A (en) * 1980-12-04 1983-09-06 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Joining lead wires to thin platinum alloy films
DE3104960A1 (de) * 1981-02-12 1982-08-26 W.C. Heraeus Gmbh, 6450 Hanau "feinstdraht"
US4441118A (en) * 1983-01-13 1984-04-03 Olin Corporation Composite copper nickel alloys with improved solderability shelf life
FR2555813B1 (fr) * 1983-09-28 1986-06-20 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
US4676827A (en) * 1985-03-27 1987-06-30 Mitsubishi Kinzoku Kabushiki Kaisha Wire for bonding a semiconductor device and process for producing the same
GB2178761B (en) * 1985-03-29 1989-09-20 Mitsubishi Metal Corp Wire for bonding a semiconductor device
GB8818050D0 (en) * 1988-07-28 1988-09-01 Lilliwyte Sa Joining of ceramic components to metal components
US7073254B2 (en) 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US5495667A (en) * 1994-11-07 1996-03-05 Micron Technology, Inc. Method for forming contact pins for semiconductor dice and interconnects
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US5994152A (en) * 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
JP2001034187A (ja) * 1999-07-22 2001-02-09 Nec Corp 熱圧着装置および熱圧着方法
DE10333465B4 (de) * 2003-07-22 2008-07-24 Infineon Technologies Ag Elektronisches Bauteil mit Halbleiterchip, Verfahren zur Herstellung desselben sowie Verfahren zur Herstellung eines Halbleiterwafers mit Kontaktflecken
JP4710700B2 (ja) * 2005-05-09 2011-06-29 株式会社デンソー 半導体装置およびその製造方法
US8381965B2 (en) 2010-07-22 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal compress bonding
US8104666B1 (en) 2010-09-01 2012-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal compressive bonding with separate die-attach and reflow processes
US9485873B2 (en) 2013-03-15 2016-11-01 Lawrence Livermore National Security, Llc Depositing bulk or micro-scale electrodes
US20160380120A1 (en) 2015-06-26 2016-12-29 Akira Terao Metallization and stringing for back-contact solar cells

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2564738A (en) * 1947-02-25 1951-08-21 Foerderung Forschung Gmbh Method of forming a vacuum-tight bond between ceramics and metals
US2671746A (en) * 1950-06-17 1954-03-09 Richard D Brew & Company Inc Bonding system
GB688866A (en) * 1950-10-19 1953-03-18 Gen Electric Co Ltd Improvements in or relating to crystal rectifiers
US2698548A (en) * 1950-10-31 1955-01-04 Gen Electric Co Ltd Method of pressure welding
NL91691C (cg-RX-API-DMAC10.html) * 1952-02-07
US2739369A (en) * 1952-03-28 1956-03-27 Metals & Controls Corp Method of making electrical contacts
BE523523A (cg-RX-API-DMAC10.html) * 1952-08-07
US2751808A (en) * 1953-05-04 1956-06-26 Remington Arms Co Inc Explosively driven stud having polished point
US2817607A (en) * 1953-08-24 1957-12-24 Rca Corp Method of making semi-conductor bodies
US2879587A (en) * 1954-07-23 1959-03-31 Gen Motors Corp Method for making composite stock
US2805370A (en) * 1956-04-26 1957-09-03 Bell Telephone Labor Inc Alloyed connections to semiconductors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1190107B (de) * 1961-09-19 1965-04-01 Siemens Ag Thermokompressionsverfahren zum Anbringen der Kontaktelektrode oder Zuleitung eines Halbleiterbauelements

Also Published As

Publication number Publication date
FR1179416A (fr) 1959-05-25
GB881832A (en) 1961-11-08
GB881834A (en) 1961-11-08
CH351342A (fr) 1961-01-15
DE1127000C2 (de) 1974-04-11
DE1127000B (cg-RX-API-DMAC10.html) 1974-04-11
NL219101A (cg-RX-API-DMAC10.html) 1900-01-01
US3006067A (en) 1961-10-31
NL113327C (cg-RX-API-DMAC10.html) 1900-01-01

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