BE512461A - - Google Patents
Info
- Publication number
- BE512461A BE512461A BE512461DA BE512461A BE 512461 A BE512461 A BE 512461A BE 512461D A BE512461D A BE 512461DA BE 512461 A BE512461 A BE 512461A
- Authority
- BE
- Belgium
- Prior art keywords
- crystal
- bath
- seed crystal
- impurity
- germanium
- Prior art date
Links
- 239000013078 crystal Substances 0.000 claims description 203
- 238000000605 extraction Methods 0.000 claims description 101
- 239000012535 impurity Substances 0.000 claims description 84
- 239000000463 material Substances 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 65
- 239000006187 pill Substances 0.000 claims description 58
- 230000008569 process Effects 0.000 claims description 47
- 229910052732 germanium Inorganic materials 0.000 claims description 41
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 41
- 239000004065 semiconductor Substances 0.000 claims description 40
- 239000000155 melt Substances 0.000 claims description 23
- 229910000927 Ge alloy Inorganic materials 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 8
- 230000003247 decreasing effect Effects 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000010899 nucleation Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 36
- 238000007792 addition Methods 0.000 description 10
- 238000002194 freeze distillation Methods 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012421 spiking Methods 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- HJTAZXHBEBIQQX-UHFFFAOYSA-N 1,5-bis(chloromethyl)naphthalene Chemical compound C1=CC=C2C(CCl)=CC=CC2=C1CCl HJTAZXHBEBIQQX-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 description 1
- GOLCXWYRSKYTSP-UHFFFAOYSA-N arsenic trioxide Inorganic materials O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical class [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE512461A true BE512461A (enrdf_load_stackoverflow) |
Family
ID=150908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE512461D BE512461A (enrdf_load_stackoverflow) |
Country Status (1)
| Country | Link |
|---|---|
| BE (1) | BE512461A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2792317A (en) * | 1954-01-28 | 1957-05-14 | Westinghouse Electric Corp | Method of producing multiple p-n junctions |
| DE1015151B (de) * | 1953-02-23 | 1957-09-05 | Siemens Ag | Verfahren zum Ziehen von Halbleiterkristallen |
| DE1021494B (de) * | 1953-04-02 | 1957-12-27 | Standard Elektrik Ag | Verfahren zur Herstellung von Schichtkristallen aus Germanium, Silizium oder anderen Halbleitern fuer Gleichrichter und Transistoren durch thermische Behandlung und anschliessendes Abschrecken |
| US2851341A (en) * | 1953-07-08 | 1958-09-09 | Shirley I Weiss | Method and equipment for growing crystals |
| US2852890A (en) * | 1955-08-12 | 1958-09-23 | Union Carbide Corp | Synthetic unicrystalline bodies and methods for making same |
| US2944875A (en) * | 1953-07-13 | 1960-07-12 | Raytheon Co | Crystal-growing apparatus and methods |
-
0
- BE BE512461D patent/BE512461A/fr unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1015151B (de) * | 1953-02-23 | 1957-09-05 | Siemens Ag | Verfahren zum Ziehen von Halbleiterkristallen |
| DE1021494B (de) * | 1953-04-02 | 1957-12-27 | Standard Elektrik Ag | Verfahren zur Herstellung von Schichtkristallen aus Germanium, Silizium oder anderen Halbleitern fuer Gleichrichter und Transistoren durch thermische Behandlung und anschliessendes Abschrecken |
| US2851341A (en) * | 1953-07-08 | 1958-09-09 | Shirley I Weiss | Method and equipment for growing crystals |
| US2944875A (en) * | 1953-07-13 | 1960-07-12 | Raytheon Co | Crystal-growing apparatus and methods |
| US2792317A (en) * | 1954-01-28 | 1957-05-14 | Westinghouse Electric Corp | Method of producing multiple p-n junctions |
| US2852890A (en) * | 1955-08-12 | 1958-09-23 | Union Carbide Corp | Synthetic unicrystalline bodies and methods for making same |
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