BE505814A - - Google Patents

Info

Publication number
BE505814A
BE505814A BE505814DA BE505814A BE 505814 A BE505814 A BE 505814A BE 505814D A BE505814D A BE 505814DA BE 505814 A BE505814 A BE 505814A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE505814A publication Critical patent/BE505814A/xx
Priority claimed from US184870A external-priority patent/US2950425A/en
Priority claimed from US184869A external-priority patent/US2792538A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
BE505814D 1950-09-14 BE505814A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US184870A US2950425A (en) 1950-09-14 1950-09-14 Semiconductor signal translating devices
US184869A US2792538A (en) 1950-09-14 1950-09-14 Semiconductor translating devices with embedded electrode

Publications (1)

Publication Number Publication Date
BE505814A true BE505814A (de) 1900-01-01

Family

ID=26880550

Family Applications (1)

Application Number Title Priority Date Filing Date
BE505814D BE505814A (de) 1950-09-14

Country Status (6)

Country Link
BE (1) BE505814A (de)
CH (1) CH302296A (de)
DE (1) DE977615C (de)
FR (1) FR1038658A (de)
GB (1) GB759012A (de)
NL (2) NL162993B (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1179646B (de) * 1954-10-29 1964-10-15 Westinghouse Electric Corp Flaechentransistor und Verfahren zu seiner Herstellung
DE977596C (de) * 1952-03-13 1967-08-03 Siemens Ag Verfahren zur Herstellung eines Flaechen-p-n-Gleichrichters oder Flaechen-Transistors
DE1288687B (de) * 1957-06-06 1969-02-06 Ibm Deutschland Verfahren zur Herstellung eines Flaechentransistors mit einlegierter Elektrodenpille, aus welcher beim Einlegieren Stoerstoffe verschiedener Diffusionskoeffizienten in den Halbleitergrundkoerper eindiffundiert werden

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE520380A (de) * 1952-06-02
GB805292A (en) * 1953-12-02 1958-12-03 Philco Corp Semiconductor devices
NL183885B (nl) * 1953-12-23 Texaco Development Corp Werkwijze voor de bereiding van een gasmengsel, dat in hoofdzaak waterstof en koolmonoxide bevat door partiele oxydatie van een brandstof.
CA563722A (en) * 1953-12-31 1958-09-23 N.V. Philips Gloeilampenfabrieken Semiconductor junction electrodes and method
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
DE1109270B (de) * 1954-04-07 1961-06-22 Standard Elektrik Lorenz Ag Verfahren zum Anschmelzen einer Stromzufuehrung an eine Legierungs-elektrode einer Halbleiteranordnung
DE1032408B (de) * 1954-06-21 1958-06-19 Siemens Ag Verfahren zur Herstellung von p-n-UEbergaengen nach dem Legierungs- bzw. Diffusionsverfahren
US2846626A (en) * 1954-07-28 1958-08-05 Raytheon Mfg Co Junction transistors and methods of forming them
NL199836A (de) * 1954-08-23 1900-01-01
DE1107343B (de) * 1954-10-14 1961-05-25 Licentia Gmbh Verfahren zum Herstellen von elektrischen Halbleiteranordnungen
DE1027323B (de) * 1954-12-02 1958-04-03 Siemens Ag Flaechentransistor und Verfahren zur Herstellung
US2885608A (en) * 1954-12-03 1959-05-05 Philco Corp Semiconductive device and method of manufacture
US2941131A (en) * 1955-05-13 1960-06-14 Philco Corp Semiconductive apparatus
US2927222A (en) * 1955-05-27 1960-03-01 Philco Corp Polarizing semiconductive apparatus
NL199100A (de) * 1955-07-21
US2856320A (en) * 1955-09-08 1958-10-14 Ibm Method of making transistor with welded collector
US2862160A (en) * 1955-10-18 1958-11-25 Hoffmann Electronics Corp Light sensitive device and method of making the same
US2847336A (en) * 1956-01-30 1958-08-12 Rca Corp Processing semiconductor devices
US2916408A (en) * 1956-03-29 1959-12-08 Raytheon Co Fabrication of junction transistors
NL112317C (de) * 1956-05-15
US2845375A (en) * 1956-06-11 1958-07-29 Itt Method for making fused junction semiconductor devices
DE1100818B (de) * 1958-09-24 1961-03-02 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit einem einkristallinen scheiben-foermigen Grundkoerper aus Silizium
US3525146A (en) * 1965-12-11 1970-08-25 Sanyo Electric Co Method of making semiconductor devices having crystal extensions for leads

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE518421C (de) * 1927-02-12 1931-10-03 Kurt Brodowski Verfahren zur Herstellung von Gleichrichtern fuer Wechselstrom
GB342643A (en) * 1929-07-11 1931-02-05 British Thomson Houston Co Ltd Improvements relating to electric rectifiers
US2504628A (en) * 1946-03-23 1950-04-18 Purdue Research Foundation Electrical device with germanium alloys
NL85857C (de) * 1948-02-26
BE489418A (de) * 1948-06-26
NL89623C (de) * 1949-04-01
DE840418C (de) * 1949-05-30 1952-06-05 Licentia Gmbh Verfahren zum Herstellen Stoerstellen enthaltender Halbleiter, insbesondere fuer Trockengleichrichter
DE968911C (de) * 1949-06-14 1958-04-10 Licentia Gmbh Elektrisch steuerbarer Trockengleichrichter und Verfahren zu seiner Herstellung
DE976468C (de) * 1949-08-15 1963-09-19 Licentia Gmbh Verfahren zum Herstellen eines UEberschusshalbleiters aus einem Defekthalbleiter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE977596C (de) * 1952-03-13 1967-08-03 Siemens Ag Verfahren zur Herstellung eines Flaechen-p-n-Gleichrichters oder Flaechen-Transistors
DE1179646B (de) * 1954-10-29 1964-10-15 Westinghouse Electric Corp Flaechentransistor und Verfahren zu seiner Herstellung
DE1288687B (de) * 1957-06-06 1969-02-06 Ibm Deutschland Verfahren zur Herstellung eines Flaechentransistors mit einlegierter Elektrodenpille, aus welcher beim Einlegieren Stoerstoffe verschiedener Diffusionskoeffizienten in den Halbleitergrundkoerper eindiffundiert werden

Also Published As

Publication number Publication date
NL162993B (nl)
DE977615C (de) 1967-08-31
CH302296A (de) 1954-10-15
FR1038658A (fr) 1953-09-30
GB759012A (en) 1956-10-10
NL90092C (de) 1900-01-01

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AT14238B (de)
AT14150B (de)
AT12519B (de)
AT11668B (de)
AT12891B (de)
AT12919B (de)
AT13070B (de)
AT13288B (de)
AT13340B (de)
AT13656B (de)
AT13956B (de)
AT14008B (de)
AT12708B (de)
AT16150B (de)
AT2012B (de)
AT6374B (de)
AT2094B (de)
AT2717B (de)
AT2701B (de)