BE505814A - - Google Patents
Info
- Publication number
- BE505814A BE505814A BE505814DA BE505814A BE 505814 A BE505814 A BE 505814A BE 505814D A BE505814D A BE 505814DA BE 505814 A BE505814 A BE 505814A
- Authority
- BE
- Belgium
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H01L2924/01014—Silicon [Si]
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- H01L2924/01079—Gold [Au]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US184870A US2950425A (en) | 1950-09-14 | 1950-09-14 | Semiconductor signal translating devices |
US184869A US2792538A (en) | 1950-09-14 | 1950-09-14 | Semiconductor translating devices with embedded electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
BE505814A true BE505814A (de) | 1900-01-01 |
Family
ID=26880550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE505814D BE505814A (de) | 1950-09-14 |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE505814A (de) |
CH (1) | CH302296A (de) |
DE (1) | DE977615C (de) |
FR (1) | FR1038658A (de) |
GB (1) | GB759012A (de) |
NL (2) | NL162993B (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1179646B (de) * | 1954-10-29 | 1964-10-15 | Westinghouse Electric Corp | Flaechentransistor und Verfahren zu seiner Herstellung |
DE977596C (de) * | 1952-03-13 | 1967-08-03 | Siemens Ag | Verfahren zur Herstellung eines Flaechen-p-n-Gleichrichters oder Flaechen-Transistors |
DE1288687B (de) * | 1957-06-06 | 1969-02-06 | Ibm Deutschland | Verfahren zur Herstellung eines Flaechentransistors mit einlegierter Elektrodenpille, aus welcher beim Einlegieren Stoerstoffe verschiedener Diffusionskoeffizienten in den Halbleitergrundkoerper eindiffundiert werden |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE520380A (de) * | 1952-06-02 | |||
GB805292A (en) * | 1953-12-02 | 1958-12-03 | Philco Corp | Semiconductor devices |
NL183885B (nl) * | 1953-12-23 | Texaco Development Corp | Werkwijze voor de bereiding van een gasmengsel, dat in hoofdzaak waterstof en koolmonoxide bevat door partiele oxydatie van een brandstof. | |
CA563722A (en) * | 1953-12-31 | 1958-09-23 | N.V. Philips Gloeilampenfabrieken | Semiconductor junction electrodes and method |
US2829992A (en) * | 1954-02-02 | 1958-04-08 | Hughes Aircraft Co | Fused junction semiconductor devices and method of making same |
DE1109270B (de) * | 1954-04-07 | 1961-06-22 | Standard Elektrik Lorenz Ag | Verfahren zum Anschmelzen einer Stromzufuehrung an eine Legierungs-elektrode einer Halbleiteranordnung |
DE1032408B (de) * | 1954-06-21 | 1958-06-19 | Siemens Ag | Verfahren zur Herstellung von p-n-UEbergaengen nach dem Legierungs- bzw. Diffusionsverfahren |
US2846626A (en) * | 1954-07-28 | 1958-08-05 | Raytheon Mfg Co | Junction transistors and methods of forming them |
NL199836A (de) * | 1954-08-23 | 1900-01-01 | ||
DE1107343B (de) * | 1954-10-14 | 1961-05-25 | Licentia Gmbh | Verfahren zum Herstellen von elektrischen Halbleiteranordnungen |
DE1027323B (de) * | 1954-12-02 | 1958-04-03 | Siemens Ag | Flaechentransistor und Verfahren zur Herstellung |
US2885608A (en) * | 1954-12-03 | 1959-05-05 | Philco Corp | Semiconductive device and method of manufacture |
US2941131A (en) * | 1955-05-13 | 1960-06-14 | Philco Corp | Semiconductive apparatus |
US2927222A (en) * | 1955-05-27 | 1960-03-01 | Philco Corp | Polarizing semiconductive apparatus |
NL199100A (de) * | 1955-07-21 | |||
US2856320A (en) * | 1955-09-08 | 1958-10-14 | Ibm | Method of making transistor with welded collector |
US2862160A (en) * | 1955-10-18 | 1958-11-25 | Hoffmann Electronics Corp | Light sensitive device and method of making the same |
US2847336A (en) * | 1956-01-30 | 1958-08-12 | Rca Corp | Processing semiconductor devices |
US2916408A (en) * | 1956-03-29 | 1959-12-08 | Raytheon Co | Fabrication of junction transistors |
NL112317C (de) * | 1956-05-15 | |||
US2845375A (en) * | 1956-06-11 | 1958-07-29 | Itt | Method for making fused junction semiconductor devices |
DE1100818B (de) * | 1958-09-24 | 1961-03-02 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung mit einem einkristallinen scheiben-foermigen Grundkoerper aus Silizium |
US3525146A (en) * | 1965-12-11 | 1970-08-25 | Sanyo Electric Co | Method of making semiconductor devices having crystal extensions for leads |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE518421C (de) * | 1927-02-12 | 1931-10-03 | Kurt Brodowski | Verfahren zur Herstellung von Gleichrichtern fuer Wechselstrom |
GB342643A (en) * | 1929-07-11 | 1931-02-05 | British Thomson Houston Co Ltd | Improvements relating to electric rectifiers |
US2504628A (en) * | 1946-03-23 | 1950-04-18 | Purdue Research Foundation | Electrical device with germanium alloys |
NL85857C (de) * | 1948-02-26 | |||
BE489418A (de) * | 1948-06-26 | |||
NL89623C (de) * | 1949-04-01 | |||
DE840418C (de) * | 1949-05-30 | 1952-06-05 | Licentia Gmbh | Verfahren zum Herstellen Stoerstellen enthaltender Halbleiter, insbesondere fuer Trockengleichrichter |
DE968911C (de) * | 1949-06-14 | 1958-04-10 | Licentia Gmbh | Elektrisch steuerbarer Trockengleichrichter und Verfahren zu seiner Herstellung |
DE976468C (de) * | 1949-08-15 | 1963-09-19 | Licentia Gmbh | Verfahren zum Herstellen eines UEberschusshalbleiters aus einem Defekthalbleiter |
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0
- NL NL90092D patent/NL90092C/xx active
- NL NL7017464.A patent/NL162993B/xx unknown
- BE BE505814D patent/BE505814A/xx unknown
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1951
- 1951-03-29 FR FR1038658D patent/FR1038658A/fr not_active Expired
- 1951-09-06 DE DEW6649A patent/DE977615C/de not_active Expired
- 1951-09-12 CH CH302296D patent/CH302296A/de unknown
- 1951-09-14 GB GB2163451A patent/GB759012A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE977596C (de) * | 1952-03-13 | 1967-08-03 | Siemens Ag | Verfahren zur Herstellung eines Flaechen-p-n-Gleichrichters oder Flaechen-Transistors |
DE1179646B (de) * | 1954-10-29 | 1964-10-15 | Westinghouse Electric Corp | Flaechentransistor und Verfahren zu seiner Herstellung |
DE1288687B (de) * | 1957-06-06 | 1969-02-06 | Ibm Deutschland | Verfahren zur Herstellung eines Flaechentransistors mit einlegierter Elektrodenpille, aus welcher beim Einlegieren Stoerstoffe verschiedener Diffusionskoeffizienten in den Halbleitergrundkoerper eindiffundiert werden |
Also Published As
Publication number | Publication date |
---|---|
NL162993B (nl) | |
DE977615C (de) | 1967-08-31 |
CH302296A (de) | 1954-10-15 |
FR1038658A (fr) | 1953-09-30 |
GB759012A (en) | 1956-10-10 |
NL90092C (de) | 1900-01-01 |