AU775671B2 - Integrated wavelength tunable single and two-stage all-optical wavelength converter - Google Patents
Integrated wavelength tunable single and two-stage all-optical wavelength converter Download PDFInfo
- Publication number
- AU775671B2 AU775671B2 AU77275/00A AU7727500A AU775671B2 AU 775671 B2 AU775671 B2 AU 775671B2 AU 77275/00 A AU77275/00 A AU 77275/00A AU 7727500 A AU7727500 A AU 7727500A AU 775671 B2 AU775671 B2 AU 775671B2
- Authority
- AU
- Australia
- Prior art keywords
- output
- coupled
- interferometer
- input
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
- G02F2/004—Transferring the modulation of modulated light, i.e. transferring the information from one optical carrier of a first wavelength to a second optical carrier of a second wavelength, e.g. all-optical wavelength converter
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
- G02F2/004—Transferring the modulation of modulated light, i.e. transferring the information from one optical carrier of a first wavelength to a second optical carrier of a second wavelength, e.g. all-optical wavelength converter
- G02F2/006—All-optical wavelength conversion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
- H01S5/5018—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive using two or more amplifiers or multiple passes through the same amplifier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5054—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 in which the wavelength is transformed by non-linear properties of the active medium, e.g. four wave mixing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Nonlinear Science (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15645999P | 1999-09-28 | 1999-09-28 | |
US60/156459 | 1999-09-28 | ||
PCT/US2000/026655 WO2001024329A1 (en) | 1999-09-28 | 2000-09-28 | Integrated wavelength tunable single and two-stage all-optical wavelength converter |
Publications (2)
Publication Number | Publication Date |
---|---|
AU7727500A AU7727500A (en) | 2001-04-30 |
AU775671B2 true AU775671B2 (en) | 2004-08-12 |
Family
ID=22559659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU77275/00A Ceased AU775671B2 (en) | 1999-09-28 | 2000-09-28 | Integrated wavelength tunable single and two-stage all-optical wavelength converter |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1218988A4 (zh) |
JP (1) | JP2003510664A (zh) |
CN (1) | CN1376326A (zh) |
AU (1) | AU775671B2 (zh) |
CA (1) | CA2380374A1 (zh) |
WO (1) | WO2001024329A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6563627B2 (en) | 2001-04-06 | 2003-05-13 | Sung-Joo Ben Yoo | Wavelength converter with modulated absorber |
WO2003021733A1 (en) | 2001-09-05 | 2003-03-13 | Kamelian Limited | Variable-gain gain-clamped optical amplifiers |
KR100928963B1 (ko) * | 2003-01-10 | 2009-11-26 | 삼성전자주식회사 | 양자우물을 가지는 광소자 |
CN1312812C (zh) * | 2003-03-03 | 2007-04-25 | 中国科学院半导体研究所 | 波长可调谐分布布拉格反射半导体激光器的制作方法 |
US7139490B2 (en) * | 2004-02-06 | 2006-11-21 | General Instrument Corporation | All-optical wavelength converter circuit |
KR100579512B1 (ko) * | 2004-12-08 | 2006-05-15 | 삼성전자주식회사 | 자체적으로 파장가변 레이저 광원을 생성하는 파장변환기 |
CN102082392A (zh) * | 2010-12-28 | 2011-06-01 | 中国科学院半导体研究所 | 可调谐激光器与光放大器的单片集成器件及其制作方法 |
CN107078462B (zh) * | 2014-07-11 | 2019-08-27 | 阿卡西亚通信有限公司 | 具有可调输出的集成大功率可调谐激光器 |
CN104104011A (zh) * | 2014-08-08 | 2014-10-15 | 武汉光迅科技股份有限公司 | 一种宽带可调谐激光器 |
EP2985645B1 (en) * | 2014-08-13 | 2019-10-16 | Caliopa NV | Method for producing an integrated optical circuit |
US9312662B1 (en) | 2014-09-30 | 2016-04-12 | Lumentum Operations Llc | Tunable laser source |
KR20210125102A (ko) * | 2019-03-01 | 2021-10-15 | 네오포토닉스 코포레이션 | 실리콘 포토닉 외부 캐비티 가변 레이저의 파장 제어 방법 |
EP4050741A1 (en) * | 2021-02-26 | 2022-08-31 | EFFECT Photonics B.V. | Monolithic photonic integrated circuit and opto-electronic system comprising the same |
CN112882311B (zh) * | 2021-03-29 | 2024-09-10 | 国网江苏省电力有限公司无锡供电分公司 | 一种基于soa的全光波长转换控制器及控制方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5105433A (en) * | 1989-09-22 | 1992-04-14 | Alcatel N.V. | Interferometric semiconductor laser |
US5444724A (en) * | 1993-08-26 | 1995-08-22 | Anritsu Corporation | Tunable wavelength light source incorporated optical filter using interferometer into external cavity |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07153933A (ja) * | 1993-11-30 | 1995-06-16 | Nippon Telegr & Teleph Corp <Ntt> | 波長変換素子 |
EP0717482A1 (en) * | 1994-12-14 | 1996-06-19 | AT&T Corp. | Semiconductor interferometric optical wavelength conversion device |
JPH08307014A (ja) * | 1995-05-08 | 1996-11-22 | Mitsubishi Electric Corp | 光半導体装置 |
JPH08334796A (ja) * | 1995-06-07 | 1996-12-17 | Oki Electric Ind Co Ltd | 光波長変換集積素子 |
FR2749946B1 (fr) * | 1996-06-14 | 1998-07-31 | Alsthom Cge Alcatel | Dispositif de mise en forme de signaux optiques binaires et son utilisation pour modifier lesdits signaux |
JPH1174599A (ja) * | 1997-07-01 | 1999-03-16 | Canon Inc | 信号伝送用半導体光源装置の駆動方法、信号伝送用光源装置、およびそれを用いた光通信方法および光通信システム |
JP3393533B2 (ja) * | 1997-07-04 | 2003-04-07 | 日本電信電話株式会社 | 波長板集積型偏波無依存半導体増幅器 |
JPH1187853A (ja) * | 1997-09-05 | 1999-03-30 | Nippon Telegr & Teleph Corp <Ntt> | 光半導体装置 |
DE60012704T2 (de) * | 1999-03-01 | 2005-01-13 | The Regents Of The University Of California, Oakland | Abstimmbarer laser mit einer integrierten vorrichtung zur wellenlängenüberwachung und zugehöriges betriebsverfahren |
-
2000
- 2000-09-28 EP EP00967013A patent/EP1218988A4/en not_active Withdrawn
- 2000-09-28 WO PCT/US2000/026655 patent/WO2001024329A1/en not_active Application Discontinuation
- 2000-09-28 JP JP2001527410A patent/JP2003510664A/ja active Pending
- 2000-09-28 CA CA002380374A patent/CA2380374A1/en not_active Abandoned
- 2000-09-28 CN CN00813401A patent/CN1376326A/zh active Pending
- 2000-09-28 AU AU77275/00A patent/AU775671B2/en not_active Ceased
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5105433A (en) * | 1989-09-22 | 1992-04-14 | Alcatel N.V. | Interferometric semiconductor laser |
US5444724A (en) * | 1993-08-26 | 1995-08-22 | Anritsu Corporation | Tunable wavelength light source incorporated optical filter using interferometer into external cavity |
Also Published As
Publication number | Publication date |
---|---|
CN1376326A (zh) | 2002-10-23 |
WO2001024329A1 (en) | 2001-04-05 |
EP1218988A1 (en) | 2002-07-03 |
AU7727500A (en) | 2001-04-30 |
JP2003510664A (ja) | 2003-03-18 |
EP1218988A4 (en) | 2005-11-23 |
CA2380374A1 (en) | 2001-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1210754B1 (en) | Method of converting an optical wavelength with an opto-electronic laser with integrated modulator | |
US7622315B2 (en) | Tunable laser source with integrated optical modulator | |
US6574259B1 (en) | Method of making an opto-electronic laser with integrated modulator | |
US6628690B1 (en) | Opto-electronic laser with integrated modulator | |
US8363314B2 (en) | Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD) | |
US7424041B2 (en) | Wide tuneable laser sources | |
US6614819B1 (en) | Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator | |
US6282345B1 (en) | Device for coupling waveguides to one another | |
AU775671B2 (en) | Integrated wavelength tunable single and two-stage all-optical wavelength converter | |
WO2007107187A1 (en) | Integrated laser optical source with active and passive sections formed in distinct substrates | |
EP1083642B1 (en) | Broad band semiconductor optical amplifier and optical communication system | |
US7382817B2 (en) | V-coupled-cavity semiconductor laser | |
US7065300B1 (en) | Optical transmitter including a linear semiconductor optical amplifier | |
Suzaki et al. | Multi-channel modulation in a DWDM monolithic photonic integrated circuit | |
US7310363B1 (en) | Integrated wavelength tunable single and two-stage all-optical wavelength converter | |
US7110169B1 (en) | Integrated optical device including a vertical lasing semiconductor optical amplifier | |
US6363093B1 (en) | Method and apparatus for a single-frequency laser | |
Harmsma et al. | Multi wavelength lasers fabricated using selective area chemical beam epitaxy | |
Gotoda et al. | A widely tunable SOA-integrated DBR laser by combination of sampled and superstructure gratings | |
Tohmori | Semiconductor photonic devices for WDM applications | |
Broeke et al. | A MOVPE grown phasar-based multi-wavelength laser with suppression of unwanted orders | |
Suzaki et al. | High extinction ratio performance of DWDM monolithic multichannel modulation circuit | |
Ramdane et al. | Tunable distributed Bragg reflector laser-electroabsorption modulator based on the identical active layer integration approach. | |
Zhao et al. | Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing | |
Kudo et al. | Wavelength-Selectable Microarray Light Sources for WDM Transmission Systems |