AU775671B2 - Integrated wavelength tunable single and two-stage all-optical wavelength converter - Google Patents

Integrated wavelength tunable single and two-stage all-optical wavelength converter Download PDF

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Publication number
AU775671B2
AU775671B2 AU77275/00A AU7727500A AU775671B2 AU 775671 B2 AU775671 B2 AU 775671B2 AU 77275/00 A AU77275/00 A AU 77275/00A AU 7727500 A AU7727500 A AU 7727500A AU 775671 B2 AU775671 B2 AU 775671B2
Authority
AU
Australia
Prior art keywords
output
coupled
interferometer
input
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU77275/00A
Other languages
English (en)
Other versions
AU7727500A (en
Inventor
Daniel J. Blumenthal
Gregory A. Fish
Thomas Gordon Beck Mason
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California filed Critical University of California
Publication of AU7727500A publication Critical patent/AU7727500A/en
Application granted granted Critical
Publication of AU775671B2 publication Critical patent/AU775671B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
    • G02F2/004—Transferring the modulation of modulated light, i.e. transferring the information from one optical carrier of a first wavelength to a second optical carrier of a second wavelength, e.g. all-optical wavelength converter
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
    • G02F2/004—Transferring the modulation of modulated light, i.e. transferring the information from one optical carrier of a first wavelength to a second optical carrier of a second wavelength, e.g. all-optical wavelength converter
    • G02F2/006—All-optical wavelength conversion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • H01S5/5018—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive using two or more amplifiers or multiple passes through the same amplifier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5054—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 in which the wavelength is transformed by non-linear properties of the active medium, e.g. four wave mixing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
AU77275/00A 1999-09-28 2000-09-28 Integrated wavelength tunable single and two-stage all-optical wavelength converter Ceased AU775671B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15645999P 1999-09-28 1999-09-28
US60/156459 1999-09-28
PCT/US2000/026655 WO2001024329A1 (en) 1999-09-28 2000-09-28 Integrated wavelength tunable single and two-stage all-optical wavelength converter

Publications (2)

Publication Number Publication Date
AU7727500A AU7727500A (en) 2001-04-30
AU775671B2 true AU775671B2 (en) 2004-08-12

Family

ID=22559659

Family Applications (1)

Application Number Title Priority Date Filing Date
AU77275/00A Ceased AU775671B2 (en) 1999-09-28 2000-09-28 Integrated wavelength tunable single and two-stage all-optical wavelength converter

Country Status (6)

Country Link
EP (1) EP1218988A4 (ja)
JP (1) JP2003510664A (ja)
CN (1) CN1376326A (ja)
AU (1) AU775671B2 (ja)
CA (1) CA2380374A1 (ja)
WO (1) WO2001024329A1 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6563627B2 (en) 2001-04-06 2003-05-13 Sung-Joo Ben Yoo Wavelength converter with modulated absorber
WO2003021733A1 (en) 2001-09-05 2003-03-13 Kamelian Limited Variable-gain gain-clamped optical amplifiers
KR100928963B1 (ko) * 2003-01-10 2009-11-26 삼성전자주식회사 양자우물을 가지는 광소자
CN1312812C (zh) * 2003-03-03 2007-04-25 中国科学院半导体研究所 波长可调谐分布布拉格反射半导体激光器的制作方法
US7139490B2 (en) * 2004-02-06 2006-11-21 General Instrument Corporation All-optical wavelength converter circuit
KR100579512B1 (ko) * 2004-12-08 2006-05-15 삼성전자주식회사 자체적으로 파장가변 레이저 광원을 생성하는 파장변환기
CN102082392A (zh) * 2010-12-28 2011-06-01 中国科学院半导体研究所 可调谐激光器与光放大器的单片集成器件及其制作方法
CN107078462B (zh) * 2014-07-11 2019-08-27 阿卡西亚通信有限公司 具有可调输出的集成大功率可调谐激光器
CN104104011A (zh) * 2014-08-08 2014-10-15 武汉光迅科技股份有限公司 一种宽带可调谐激光器
EP2985645B1 (en) * 2014-08-13 2019-10-16 Caliopa NV Method for producing an integrated optical circuit
US9312662B1 (en) 2014-09-30 2016-04-12 Lumentum Operations Llc Tunable laser source
KR20210125102A (ko) * 2019-03-01 2021-10-15 네오포토닉스 코포레이션 실리콘 포토닉 외부 캐비티 가변 레이저의 파장 제어 방법
EP4050741A1 (en) * 2021-02-26 2022-08-31 EFFECT Photonics B.V. Monolithic photonic integrated circuit and opto-electronic system comprising the same
CN112882311B (zh) * 2021-03-29 2024-09-10 国网江苏省电力有限公司无锡供电分公司 一种基于soa的全光波长转换控制器及控制方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5105433A (en) * 1989-09-22 1992-04-14 Alcatel N.V. Interferometric semiconductor laser
US5444724A (en) * 1993-08-26 1995-08-22 Anritsu Corporation Tunable wavelength light source incorporated optical filter using interferometer into external cavity

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07153933A (ja) * 1993-11-30 1995-06-16 Nippon Telegr & Teleph Corp <Ntt> 波長変換素子
EP0717482A1 (en) * 1994-12-14 1996-06-19 AT&T Corp. Semiconductor interferometric optical wavelength conversion device
JPH08307014A (ja) * 1995-05-08 1996-11-22 Mitsubishi Electric Corp 光半導体装置
JPH08334796A (ja) * 1995-06-07 1996-12-17 Oki Electric Ind Co Ltd 光波長変換集積素子
FR2749946B1 (fr) * 1996-06-14 1998-07-31 Alsthom Cge Alcatel Dispositif de mise en forme de signaux optiques binaires et son utilisation pour modifier lesdits signaux
JPH1174599A (ja) * 1997-07-01 1999-03-16 Canon Inc 信号伝送用半導体光源装置の駆動方法、信号伝送用光源装置、およびそれを用いた光通信方法および光通信システム
JP3393533B2 (ja) * 1997-07-04 2003-04-07 日本電信電話株式会社 波長板集積型偏波無依存半導体増幅器
JPH1187853A (ja) * 1997-09-05 1999-03-30 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
DE60012704T2 (de) * 1999-03-01 2005-01-13 The Regents Of The University Of California, Oakland Abstimmbarer laser mit einer integrierten vorrichtung zur wellenlängenüberwachung und zugehöriges betriebsverfahren

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5105433A (en) * 1989-09-22 1992-04-14 Alcatel N.V. Interferometric semiconductor laser
US5444724A (en) * 1993-08-26 1995-08-22 Anritsu Corporation Tunable wavelength light source incorporated optical filter using interferometer into external cavity

Also Published As

Publication number Publication date
CN1376326A (zh) 2002-10-23
WO2001024329A1 (en) 2001-04-05
EP1218988A1 (en) 2002-07-03
AU7727500A (en) 2001-04-30
JP2003510664A (ja) 2003-03-18
EP1218988A4 (en) 2005-11-23
CA2380374A1 (en) 2001-04-05

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