AU5563096A - Apparatus and method for batch thermal conditioning of subst rates - Google Patents

Apparatus and method for batch thermal conditioning of subst rates

Info

Publication number
AU5563096A
AU5563096A AU55630/96A AU5563096A AU5563096A AU 5563096 A AU5563096 A AU 5563096A AU 55630/96 A AU55630/96 A AU 55630/96A AU 5563096 A AU5563096 A AU 5563096A AU 5563096 A AU5563096 A AU 5563096A
Authority
AU
Australia
Prior art keywords
subst
rates
thermal conditioning
batch thermal
batch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU55630/96A
Other languages
English (en)
Inventor
Richard S. Muka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Azenta Inc
Original Assignee
Brooks Automation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brooks Automation Inc filed Critical Brooks Automation Inc
Publication of AU5563096A publication Critical patent/AU5563096A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
AU55630/96A 1995-05-24 1996-04-23 Apparatus and method for batch thermal conditioning of subst rates Abandoned AU5563096A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/449,809 US6193506B1 (en) 1995-05-24 1995-05-24 Apparatus and method for batch thermal conditioning of substrates
US449809 1995-05-24
PCT/US1996/005546 WO1996037744A1 (en) 1995-05-24 1996-04-23 Apparatus and method for batch thermal conditioning of substrates

Publications (1)

Publication Number Publication Date
AU5563096A true AU5563096A (en) 1996-12-11

Family

ID=23785579

Family Applications (1)

Application Number Title Priority Date Filing Date
AU55630/96A Abandoned AU5563096A (en) 1995-05-24 1996-04-23 Apparatus and method for batch thermal conditioning of subst rates

Country Status (4)

Country Link
US (1) US6193506B1 (ja)
JP (1) JP4597272B2 (ja)
AU (1) AU5563096A (ja)
WO (1) WO1996037744A1 (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080156657A1 (en) * 2000-02-17 2008-07-03 Butterfield Paul D Conductive polishing article for electrochemical mechanical polishing
US20040020789A1 (en) * 2000-02-17 2004-02-05 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7374644B2 (en) * 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
EP1174910A3 (en) * 2000-07-20 2010-01-06 Applied Materials, Inc. Method and apparatus for dechucking a substrate
US6528435B1 (en) * 2000-08-25 2003-03-04 Wafermasters, Inc. Plasma processing
DE10112731A1 (de) * 2001-03-14 2002-10-02 Schott Glas Beschichtung von Substraten
US6528767B2 (en) * 2001-05-22 2003-03-04 Applied Materials, Inc. Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications
JP2003148872A (ja) * 2001-08-28 2003-05-21 Sankyo Seiki Mfg Co Ltd オーブンシステム
JP3662893B2 (ja) * 2002-04-23 2005-06-22 株式会社ノリタケカンパニーリミテド 熱処理装置
US20040096636A1 (en) * 2002-11-18 2004-05-20 Applied Materials, Inc. Lifting glass substrate without center lift pins
US6917755B2 (en) * 2003-02-27 2005-07-12 Applied Materials, Inc. Substrate support
US20040226513A1 (en) * 2003-05-12 2004-11-18 Applied Materials, Inc. Chamber for uniform heating of large area substrates
JP3802889B2 (ja) * 2003-07-01 2006-07-26 東京エレクトロン株式会社 熱処理装置及びその校正方法
WO2005044694A1 (ja) * 2003-11-06 2005-05-19 Sharp Kabushiki Kaisha 基板搬送用トレイ
US8033245B2 (en) * 2004-02-12 2011-10-11 Applied Materials, Inc. Substrate support bushing
US20060005770A1 (en) * 2004-07-09 2006-01-12 Robin Tiner Independently moving substrate supports
CN104364888B (zh) * 2012-05-28 2017-02-22 株式会社日立国际电气 基板处理装置、温度计测系统、处理装置的温度计测方法、输送装置以及记录介质
CN108350572A (zh) * 2015-09-22 2018-07-31 应用材料公司 大面积双基板处理系统
JP6802128B2 (ja) * 2017-08-28 2020-12-16 エスペック株式会社 熱処理装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3272350A (en) 1964-09-25 1966-09-13 Westinghouse Electric Corp Method and apparatus for semiconductor wafer handling
US3935646A (en) 1974-11-15 1976-02-03 Millipore Corporation Gel electrophoresis slide drying
US4381965A (en) * 1982-01-06 1983-05-03 Drytek, Inc. Multi-planar electrode plasma etching
US4490111A (en) 1982-09-23 1984-12-25 California Linear Circuits, Inc. Apparatus for making stacked high voltage rectifiers
US4610628A (en) * 1983-12-28 1986-09-09 Denkoh Co., Ltd. Vertical furnace for heat-treating semiconductor
US4597736A (en) 1985-05-03 1986-07-01 Yield Engineering Systems, Inc. Method and apparatus for heating semiconductor wafers
DE3516490A1 (de) 1985-05-08 1986-11-13 Elektroschmelzwerk Kempten GmbH, 8000 München Brennhilfsmittel
US4715921A (en) 1986-10-24 1987-12-29 General Signal Corporation Quad processor
JPS63153388A (ja) * 1986-08-23 1988-06-25 東レ株式会社 熱処理炉
US4721462A (en) 1986-10-21 1988-01-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Active hold-down for heat treating
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
ES2163388T3 (es) 1988-05-24 2002-02-01 Unaxis Balzers Ag Instalacion de vacio.
US5046909A (en) 1989-06-29 1991-09-10 Applied Materials, Inc. Method and apparatus for handling semiconductor wafers
US5044752A (en) * 1989-06-30 1991-09-03 General Signal Corporation Apparatus and process for positioning wafers in receiving devices
FR2656599B1 (fr) 1989-12-29 1992-03-27 Commissariat Energie Atomique Dispositif de rangement d'objets plats dans une cassette avec rayonnages intermediaires.
JP2808826B2 (ja) 1990-05-25 1998-10-08 松下電器産業株式会社 基板の移し換え装置
US5252807A (en) 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US5060354A (en) 1990-07-02 1991-10-29 George Chizinsky Heated plate rapid thermal processor
JP3204699B2 (ja) * 1990-11-30 2001-09-04 株式会社東芝 熱処理装置
JP3108459B2 (ja) * 1991-02-26 2000-11-13 東京エレクトロン株式会社 縦型熱処理装置
US5249960A (en) * 1991-06-14 1993-10-05 Tokyo Electron Sagami Kabushiki Kaisha Forced cooling apparatus for heat treatment apparatus
JP3234617B2 (ja) * 1991-12-16 2001-12-04 東京エレクトロン株式会社 熱処理装置用基板支持具
US5404894A (en) 1992-05-20 1995-04-11 Tokyo Electron Kabushiki Kaisha Conveyor apparatus
ES2090893T3 (es) 1993-01-28 1996-10-16 Applied Materials Inc Aparato de tratamiento en vacio que tiene una capacidad de produccion mejorada.

Also Published As

Publication number Publication date
JP4597272B2 (ja) 2010-12-15
WO1996037744A1 (en) 1996-11-28
US6193506B1 (en) 2001-02-27
JPH11506531A (ja) 1999-06-08

Similar Documents

Publication Publication Date Title
AU5563096A (en) Apparatus and method for batch thermal conditioning of subst rates
AU7641996A (en) Method and apparatus for controlling the thermal profile of skin
AU1261195A (en) Method and apparatus for producing thin films
AU4765896A (en) Glass composition determination method and apparatus
AU4420996A (en) Method and apparatus for coating substrates using an air knife
EP0733728A3 (en) Single crystal-growing method and apparatus
AU1332595A (en) Apparatus and method for delivery of reactant gases
AU7091996A (en) Apparatus and method for microdermoabrasion
AU3985695A (en) Method and apparatus for growing thin films
AU7601396A (en) Method and apparatus for improving vision
AU6167196A (en) Apparatus and method for thermal ablation
AU7053896A (en) Completion apparatus and method
AU5593496A (en) Method and apparatus for communicating messages
AU2587295A (en) Process and apparatus for coloring glass
AU5584896A (en) Process and apparatus for producing phosphone-containing gas
IL117951A (en) Method and apparatus for true temperature determination
AU5792894A (en) Method of controlling process and apparatus thereof
AU5507696A (en) Apparatus for and method of bending glass sheets
AU4993396A (en) Thermal processing apparatus and process
AU2719095A (en) Method and apparatus for forming wide mouth glassware
AU6671796A (en) Method and apparatus for thermal treatment of non-gaseous material
AU3217695A (en) Method and apparatus for forming continuous glass fibers
AU689733B2 (en) Method and apparatus for holding molten metal
AU7658596A (en) Method and apparatus for temperature control
AU6230896A (en) Apparatus and method for cooling of liquids