AU3530000A - Apparatus and method for determining the active dopant profile in a semiconductor wafer - Google Patents
Apparatus and method for determining the active dopant profile in a semiconductor waferInfo
- Publication number
- AU3530000A AU3530000A AU35300/00A AU3530000A AU3530000A AU 3530000 A AU3530000 A AU 3530000A AU 35300/00 A AU35300/00 A AU 35300/00A AU 3530000 A AU3530000 A AU 3530000A AU 3530000 A AU3530000 A AU 3530000A
- Authority
- AU
- Australia
- Prior art keywords
- determining
- semiconductor wafer
- dopant profile
- active dopant
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/274,821 US6323951B1 (en) | 1999-03-22 | 1999-03-22 | Apparatus and method for determining the active dopant profile in a semiconductor wafer |
| US09274821 | 1999-03-22 | ||
| PCT/US2000/007357 WO2000057159A1 (en) | 1999-03-22 | 2000-03-20 | Apparatus and method for determining the active dopant profile in a semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU3530000A true AU3530000A (en) | 2000-10-09 |
Family
ID=23049742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU35300/00A Abandoned AU3530000A (en) | 1999-03-22 | 2000-03-20 | Apparatus and method for determining the active dopant profile in a semiconductor wafer |
Country Status (5)
| Country | Link |
|---|---|
| US (5) | US6323951B1 (https=) |
| EP (1) | EP1192444A1 (https=) |
| JP (1) | JP2002540396A (https=) |
| AU (1) | AU3530000A (https=) |
| WO (1) | WO2000057159A1 (https=) |
Families Citing this family (66)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6885444B2 (en) | 1998-06-10 | 2005-04-26 | Boxer Cross Inc | Evaluating a multi-layered structure for voids |
| US6049220A (en) | 1998-06-10 | 2000-04-11 | Boxer Cross Incorporated | Apparatus and method for evaluating a wafer of semiconductor material |
| US6925346B1 (en) * | 1998-06-30 | 2005-08-02 | Jyoti Mazumder | Closed-loop, rapid manufacturing of three-dimensional components using direct metal deposition |
| US6323951B1 (en) * | 1999-03-22 | 2001-11-27 | Boxer Cross Incorporated | Apparatus and method for determining the active dopant profile in a semiconductor wafer |
| US6477685B1 (en) * | 1999-09-22 | 2002-11-05 | Texas Instruments Incorporated | Method and apparatus for yield and failure analysis in the manufacturing of semiconductors |
| JP2003512617A (ja) * | 1999-10-15 | 2003-04-02 | フェイ エレクトロン オプティクス ビー ヴィ | 材料、特に半導体中の電荷担体濃度の決定方法 |
| JP3288670B2 (ja) * | 2000-02-17 | 2002-06-04 | 科学技術振興事業団 | 試料の物理的性質の測定装置 |
| JP3288671B2 (ja) * | 2000-02-17 | 2002-06-04 | 科学技術振興事業団 | 試料の物理的性質の測定装置 |
| JP3288672B2 (ja) * | 2000-02-17 | 2002-06-04 | 科学技術振興事業団 | 試料の物理的性質の測定装置 |
| US6812047B1 (en) * | 2000-03-08 | 2004-11-02 | Boxer Cross, Inc. | Evaluating a geometric or material property of a multilayered structure |
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| US6812717B2 (en) * | 2001-03-05 | 2004-11-02 | Boxer Cross, Inc | Use of a coefficient of a power curve to evaluate a semiconductor wafer |
| US6940592B2 (en) * | 2001-10-09 | 2005-09-06 | Applied Materials, Inc. | Calibration as well as measurement on the same workpiece during fabrication |
| US6890772B2 (en) * | 2002-01-09 | 2005-05-10 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for determining two dimensional doping profiles with SIMS |
| AT411496B (de) * | 2002-01-25 | 2004-01-26 | Gornik Erich Dipl Ing Dr | Verfahren und einrichtung zum optischen testen von halbleiterbauelementen |
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| US6777251B2 (en) * | 2002-06-20 | 2004-08-17 | Taiwan Semiconductor Manufacturing Co. Ltd | Metrology for monitoring a rapid thermal annealing process |
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| ATE520140T1 (de) * | 2002-09-16 | 2011-08-15 | Imec | Geschaltete kapazität |
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| US6878559B2 (en) * | 2002-09-23 | 2005-04-12 | Applied Materials, Inc. | Measurement of lateral diffusion of diffused layers |
| US6836139B2 (en) | 2002-10-22 | 2004-12-28 | Solid State Measurments, Inc. | Method and apparatus for determining defect and impurity concentration in semiconducting material of a semiconductor wafer |
| US7663385B2 (en) | 2002-12-13 | 2010-02-16 | Nanometrics Incorporated | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor |
| JP2004235648A (ja) * | 2003-01-31 | 2004-08-19 | Osram Opto Semiconductors Gmbh | 光電子デバイス用の半導体基板及びその製造方法 |
| DE10308646B4 (de) * | 2003-01-31 | 2008-07-10 | Osram Opto Semiconductors Gmbh | Halbleitersubstrat für optoelektronische Bauelemente und Verfahren zu dessen Herstellung |
| JP2004311580A (ja) * | 2003-04-03 | 2004-11-04 | Toshiba Corp | 半導体評価装置及び半導体評価方法 |
| US7248367B2 (en) * | 2003-06-10 | 2007-07-24 | Therma-Wave, Inc. | Characterization of ultra shallow junctions in semiconductor wafers |
| US6891628B2 (en) * | 2003-06-25 | 2005-05-10 | N & K Technology, Inc. | Method and apparatus for examining features on semi-transparent and transparent substrates |
| DE10339991A1 (de) * | 2003-08-29 | 2005-03-31 | Advanced Micro Devices, Inc., Sunnyvale | Verbesserte Technik zum Einstellen einer Eindringtiefe während der Implantation von Ionen in ein Halbleitergebiet |
| US7280215B2 (en) * | 2003-09-24 | 2007-10-09 | Therma-Wave, Inc. | Photothermal system with spectroscopic pump and probe |
| US7142297B2 (en) | 2003-10-31 | 2006-11-28 | Synopsys Switzerland Llc | Method for simulating the movement of particles |
| US7190458B2 (en) * | 2003-12-09 | 2007-03-13 | Applied Materials, Inc. | Use of scanning beam for differential evaluation of adjacent regions for change in reflectivity |
| US7136163B2 (en) * | 2003-12-09 | 2006-11-14 | Applied Materials, Inc. | Differential evaluation of adjacent regions for change in reflectivity |
| US7078711B2 (en) * | 2004-02-13 | 2006-07-18 | Applied Materials, Inc. | Matching dose and energy of multiple ion implanters |
| US7026175B2 (en) * | 2004-03-29 | 2006-04-11 | Applied Materials, Inc. | High throughput measurement of via defects in interconnects |
| US7190177B2 (en) * | 2004-08-18 | 2007-03-13 | The Curators Of The University Of Missouri | Method and apparatus for nondestructive sample inspection |
| US7250313B2 (en) * | 2004-09-30 | 2007-07-31 | Solid State Measurements, Inc. | Method of detecting un-annealed ion implants |
| US7666464B2 (en) * | 2004-10-23 | 2010-02-23 | Applied Materials, Inc. | RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor |
| US7379185B2 (en) | 2004-11-01 | 2008-05-27 | Applied Materials, Inc. | Evaluation of openings in a dielectric layer |
| US20060237811A1 (en) * | 2004-11-10 | 2006-10-26 | Boone Thomas | Non-destructive, in-line characterization of semiconductor materials |
| US20060114478A1 (en) * | 2004-11-26 | 2006-06-01 | Applied Materials, Inc. | Evaluating effects of tilt angle in ion implantation |
| GB0427318D0 (en) * | 2004-12-14 | 2005-01-19 | Imec Inter Uni Micro Electr | Method and device for the independent extraction of carrier concentration level and electrical junction depth in a semiconductor substrate |
| GB0518200D0 (en) * | 2005-09-07 | 2005-10-19 | Imec Inter Uni Micro Electr | A method and device to quantify active carrier profiles in ultra-shallow semiconductor structures |
| JP2008058108A (ja) | 2006-08-30 | 2008-03-13 | Honda Motor Co Ltd | 磁歪式トルクセンサの製造方法と電動パワーステアリング装置 |
| US7821637B1 (en) | 2007-02-22 | 2010-10-26 | J.A. Woollam Co., Inc. | System for controlling intensity of a beam of electromagnetic radiation and method for investigating materials with low specular reflectance and/or are depolarizing |
| US20080318345A1 (en) * | 2007-06-22 | 2008-12-25 | Persing Harold M | Plasma ion implantation process control using reflectometry |
| US7713757B2 (en) * | 2008-03-14 | 2010-05-11 | Applied Materials, Inc. | Method for measuring dopant concentration during plasma ion implantation |
| US20100002236A1 (en) | 2008-06-27 | 2010-01-07 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Method for determining the doping profile of a partially activated doped semiconductor region |
| US8384904B2 (en) * | 2009-03-17 | 2013-02-26 | Imec | Method and apparatus for determining the junction depth of a semiconductor region |
| WO2010115994A1 (en) | 2009-04-10 | 2010-10-14 | Imec | Determining active doping profiles in semiconductor structures |
| US8115932B2 (en) * | 2009-05-28 | 2012-02-14 | Corning Incorporated | Methods and apparatus for measuring ion implant dose |
| US9691650B2 (en) * | 2009-09-29 | 2017-06-27 | Applied Materials, Inc. | Substrate transfer robot with chamber and substrate monitoring capability |
| US8535957B1 (en) * | 2010-06-30 | 2013-09-17 | Kla-Tencor Corporation | Dopant metrology with information feedforward and feedback |
| WO2012010647A1 (en) * | 2010-07-21 | 2012-01-26 | Imec | Method for determining an active dopant profile |
| TWI575630B (zh) * | 2011-06-10 | 2017-03-21 | 應用材料股份有限公司 | 脈衝循環器 |
| US10928317B2 (en) * | 2016-06-22 | 2021-02-23 | University Of Virginia Patent Foundation | Fiber-optic based thermal reflectance material property measurement system and related methods |
| DE102016008509A1 (de) * | 2016-07-13 | 2018-01-18 | Siltectra Gmbh | Laserkonditionierung von Festkörpern mit Vorwissen aus vorherigen Bearbeitungsschritten |
| JP2018133473A (ja) * | 2017-02-16 | 2018-08-23 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
| US10928311B2 (en) * | 2018-04-17 | 2021-02-23 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Rapid multiplexed infrared 3D nano-tomography |
| US11654635B2 (en) | 2019-04-18 | 2023-05-23 | The Research Foundation For Suny | Enhanced non-destructive testing in directed energy material processing |
| US11462382B2 (en) * | 2021-02-25 | 2022-10-04 | Nanya Technology Corporation | Ion implant apparatus and method of controlling the ion implant apparatus |
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| US4273421A (en) | 1977-01-17 | 1981-06-16 | Motorola, Inc. | Semiconductor lifetime measurement method |
| US4211488A (en) | 1978-10-03 | 1980-07-08 | Rca Corporation | Optical testing of a semiconductor |
| US4255971A (en) | 1978-11-01 | 1981-03-17 | Allan Rosencwaig | Thermoacoustic microscopy |
| JPS567006A (en) * | 1979-06-22 | 1981-01-24 | Ibm | Method of extending measurement range of interference |
| US4513384A (en) * | 1982-06-18 | 1985-04-23 | Therma-Wave, Inc. | Thin film thickness measurements and depth profiling utilizing a thermal wave detection system |
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| US4579463A (en) | 1984-05-21 | 1986-04-01 | Therma-Wave Partners | Detecting thermal waves to evaluate thermal parameters |
| US4636088A (en) * | 1984-05-21 | 1987-01-13 | Therma-Wave, Inc. | Method and apparatus for evaluating surface conditions of a sample |
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| US6169601B1 (en) * | 1998-06-23 | 2001-01-02 | Ade Optical Systems | Method and apparatus for distinguishing particles from subsurface defects on a substrate using polarized light |
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| US6323951B1 (en) * | 1999-03-22 | 2001-11-27 | Boxer Cross Incorporated | Apparatus and method for determining the active dopant profile in a semiconductor wafer |
| US6268916B1 (en) * | 1999-05-11 | 2001-07-31 | Kla-Tencor Corporation | System for non-destructive measurement of samples |
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-
1999
- 1999-03-22 US US09/274,821 patent/US6323951B1/en not_active Expired - Lifetime
-
2000
- 2000-03-20 AU AU35300/00A patent/AU3530000A/en not_active Abandoned
- 2000-03-20 WO PCT/US2000/007357 patent/WO2000057159A1/en not_active Ceased
- 2000-03-20 EP EP00913943A patent/EP1192444A1/en not_active Withdrawn
- 2000-03-20 JP JP2000606984A patent/JP2002540396A/ja active Pending
-
2001
- 2001-08-21 US US09/935,128 patent/US6426644B1/en not_active Expired - Lifetime
- 2001-11-26 US US09/994,441 patent/US6483594B2/en not_active Expired - Lifetime
-
2002
- 2002-08-19 US US10/223,952 patent/US6885458B2/en not_active Expired - Lifetime
-
2004
- 2004-07-02 US US10/884,673 patent/US20040239945A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US6483594B2 (en) | 2002-11-19 |
| US20040239945A1 (en) | 2004-12-02 |
| US6426644B1 (en) | 2002-07-30 |
| EP1192444A1 (en) | 2002-04-03 |
| US6323951B1 (en) | 2001-11-27 |
| WO2000057159A1 (en) | 2000-09-28 |
| US20030043382A1 (en) | 2003-03-06 |
| US6885458B2 (en) | 2005-04-26 |
| US20020027660A1 (en) | 2002-03-07 |
| US20020085211A1 (en) | 2002-07-04 |
| JP2002540396A (ja) | 2002-11-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |