JP2002540396A - 半導体ウェーハの活性ドーパントのプロファイルを決定するための装置及びその方法 - Google Patents

半導体ウェーハの活性ドーパントのプロファイルを決定するための装置及びその方法

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Publication number
JP2002540396A
JP2002540396A JP2000606984A JP2000606984A JP2002540396A JP 2002540396 A JP2002540396 A JP 2002540396A JP 2000606984 A JP2000606984 A JP 2000606984A JP 2000606984 A JP2000606984 A JP 2000606984A JP 2002540396 A JP2002540396 A JP 2002540396A
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wafer
phase
measurement
region
profile
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JP2000606984A
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Japanese (ja)
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JP2002540396A5 (https=
Inventor
ボーデン、ピーター・ジー
ニジメイジャー、レジナ・ジー
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ボクサー・クロス・インコーポレイテッド
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Publication of JP2002540396A publication Critical patent/JP2002540396A/ja
Publication of JP2002540396A5 publication Critical patent/JP2002540396A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2000606984A 1999-03-22 2000-03-20 半導体ウェーハの活性ドーパントのプロファイルを決定するための装置及びその方法 Pending JP2002540396A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/274,821 US6323951B1 (en) 1999-03-22 1999-03-22 Apparatus and method for determining the active dopant profile in a semiconductor wafer
US09/274,821 1999-03-22
PCT/US2000/007357 WO2000057159A1 (en) 1999-03-22 2000-03-20 Apparatus and method for determining the active dopant profile in a semiconductor wafer

Publications (2)

Publication Number Publication Date
JP2002540396A true JP2002540396A (ja) 2002-11-26
JP2002540396A5 JP2002540396A5 (https=) 2011-09-29

Family

ID=23049742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000606984A Pending JP2002540396A (ja) 1999-03-22 2000-03-20 半導体ウェーハの活性ドーパントのプロファイルを決定するための装置及びその方法

Country Status (5)

Country Link
US (5) US6323951B1 (https=)
EP (1) EP1192444A1 (https=)
JP (1) JP2002540396A (https=)
AU (1) AU3530000A (https=)
WO (1) WO2000057159A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009512180A (ja) * 2005-09-07 2009-03-19 アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ 極浅半導体構造での活性キャリアプロファイルを定量化する方法および装置
JP2010034544A (ja) * 2008-06-27 2010-02-12 Imec 部分的に活性化されたドープ半導体領域のドーピングプロファイル決定方法
JP2018133473A (ja) * 2017-02-16 2018-08-23 富士電機株式会社 半導体装置の製造方法および半導体装置

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JP3288670B2 (ja) * 2000-02-17 2002-06-04 科学技術振興事業団 試料の物理的性質の測定装置
JP3288671B2 (ja) * 2000-02-17 2002-06-04 科学技術振興事業団 試料の物理的性質の測定装置
JP3288672B2 (ja) * 2000-02-17 2002-06-04 科学技術振興事業団 試料の物理的性質の測定装置
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US7078711B2 (en) * 2004-02-13 2006-07-18 Applied Materials, Inc. Matching dose and energy of multiple ion implanters
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US7379185B2 (en) 2004-11-01 2008-05-27 Applied Materials, Inc. Evaluation of openings in a dielectric layer
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US20060114478A1 (en) * 2004-11-26 2006-06-01 Applied Materials, Inc. Evaluating effects of tilt angle in ion implantation
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JP2008058108A (ja) 2006-08-30 2008-03-13 Honda Motor Co Ltd 磁歪式トルクセンサの製造方法と電動パワーステアリング装置
US7821637B1 (en) 2007-02-22 2010-10-26 J.A. Woollam Co., Inc. System for controlling intensity of a beam of electromagnetic radiation and method for investigating materials with low specular reflectance and/or are depolarizing
US20080318345A1 (en) * 2007-06-22 2008-12-25 Persing Harold M Plasma ion implantation process control using reflectometry
US7713757B2 (en) * 2008-03-14 2010-05-11 Applied Materials, Inc. Method for measuring dopant concentration during plasma ion implantation
US8384904B2 (en) * 2009-03-17 2013-02-26 Imec Method and apparatus for determining the junction depth of a semiconductor region
WO2010115994A1 (en) 2009-04-10 2010-10-14 Imec Determining active doping profiles in semiconductor structures
US8115932B2 (en) * 2009-05-28 2012-02-14 Corning Incorporated Methods and apparatus for measuring ion implant dose
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TWI575630B (zh) * 2011-06-10 2017-03-21 應用材料股份有限公司 脈衝循環器
US10928317B2 (en) * 2016-06-22 2021-02-23 University Of Virginia Patent Foundation Fiber-optic based thermal reflectance material property measurement system and related methods
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US11654635B2 (en) 2019-04-18 2023-05-23 The Research Foundation For Suny Enhanced non-destructive testing in directed energy material processing
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JP2010034544A (ja) * 2008-06-27 2010-02-12 Imec 部分的に活性化されたドープ半導体領域のドーピングプロファイル決定方法
JP2018133473A (ja) * 2017-02-16 2018-08-23 富士電機株式会社 半導体装置の製造方法および半導体装置

Also Published As

Publication number Publication date
US6483594B2 (en) 2002-11-19
US20040239945A1 (en) 2004-12-02
US6426644B1 (en) 2002-07-30
EP1192444A1 (en) 2002-04-03
US6323951B1 (en) 2001-11-27
WO2000057159A1 (en) 2000-09-28
US20030043382A1 (en) 2003-03-06
AU3530000A (en) 2000-10-09
US6885458B2 (en) 2005-04-26
US20020027660A1 (en) 2002-03-07
US20020085211A1 (en) 2002-07-04

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