AU2014285760B2 - Solar cell and process for producing the same - Google Patents
Solar cell and process for producing the same Download PDFInfo
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- AU2014285760B2 AU2014285760B2 AU2014285760A AU2014285760A AU2014285760B2 AU 2014285760 B2 AU2014285760 B2 AU 2014285760B2 AU 2014285760 A AU2014285760 A AU 2014285760A AU 2014285760 A AU2014285760 A AU 2014285760A AU 2014285760 B2 AU2014285760 B2 AU 2014285760B2
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- 230000008569 process Effects 0.000 title abstract description 13
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- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 177
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- 150000003839 salts Chemical class 0.000 claims description 39
- 125000005842 heteroatom Chemical group 0.000 claims description 33
- 230000005525 hole transport Effects 0.000 claims description 32
- 150000001768 cations Chemical class 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 238000000224 chemical solution deposition Methods 0.000 claims description 16
- 150000003863 ammonium salts Chemical class 0.000 claims description 13
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 12
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- 239000007787 solid Substances 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 12
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- 150000001767 cationic compounds Chemical class 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 150000003867 organic ammonium compounds Chemical group 0.000 claims description 4
- 125000002091 cationic group Chemical group 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 229910010066 TiC14 Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 337
- 239000000463 material Substances 0.000 description 55
- 239000000243 solution Substances 0.000 description 47
- 125000001424 substituent group Chemical group 0.000 description 31
- 150000001875 compounds Chemical class 0.000 description 24
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 22
- 229910052736 halogen Inorganic materials 0.000 description 22
- 150000002367 halogens Chemical class 0.000 description 22
- 125000004122 cyclic group Chemical group 0.000 description 20
- 239000002243 precursor Substances 0.000 description 20
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 16
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 16
- 229910052717 sulfur Inorganic materials 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 125000003118 aryl group Chemical group 0.000 description 13
- 230000000903 blocking effect Effects 0.000 description 12
- 239000011241 protective layer Substances 0.000 description 12
- 229910001887 tin oxide Inorganic materials 0.000 description 12
- 125000000217 alkyl group Chemical group 0.000 description 11
- 125000000304 alkynyl group Chemical group 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 125000003342 alkenyl group Chemical group 0.000 description 10
- 239000004020 conductor Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 230000014509 gene expression Effects 0.000 description 9
- 125000001072 heteroaryl group Chemical group 0.000 description 9
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- 238000004528 spin coating Methods 0.000 description 9
- 150000001450 anions Chemical class 0.000 description 8
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- 239000000758 substrate Substances 0.000 description 8
- 229910003074 TiCl4 Inorganic materials 0.000 description 7
- 125000001931 aliphatic group Chemical group 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 7
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 6
- 229910052794 bromium Inorganic materials 0.000 description 6
- 239000000975 dye Substances 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 229910002370 SrTiO3 Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
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- 239000013078 crystal Substances 0.000 description 4
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- 150000004820 halides Chemical class 0.000 description 4
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- 229910001411 inorganic cation Inorganic materials 0.000 description 4
- 239000011244 liquid electrolyte Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910007470 ZnO—Al2O3 Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 230000001235 sensitizing effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten(VI) oxide Inorganic materials O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 2
- 229910010165 TiCu Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910007674 ZnO—Ga2O3 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
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- 239000011888 foil Substances 0.000 description 2
- 229910052949 galena Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000008040 ionic compounds Chemical class 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 239000002135 nanosheet Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005289 physical deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052950 sphalerite Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- FGYADSCZTQOAFK-UHFFFAOYSA-N 1-methylbenzimidazole Chemical compound C1=CC=C2N(C)C=NC2=C1 FGYADSCZTQOAFK-UHFFFAOYSA-N 0.000 description 1
- JFPZVDQDDRHZBN-UHFFFAOYSA-N 4-nonylpyridine Chemical compound CCCCCCCCCC1=CC=NC=C1 JFPZVDQDDRHZBN-UHFFFAOYSA-N 0.000 description 1
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910002929 BaSnO3 Inorganic materials 0.000 description 1
- 125000000882 C2-C6 alkenyl group Chemical group 0.000 description 1
- RAXXELZNTBOGNW-UHFFFAOYSA-O Imidazolium Chemical compound C1=C[NH+]=CN1 RAXXELZNTBOGNW-UHFFFAOYSA-O 0.000 description 1
- 229910013462 LiC104 Inorganic materials 0.000 description 1
- 229910019714 Nb2O3 Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910003107 Zn2SnO4 Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000000541 cathodic arc deposition Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- FZHSXDYFFIMBIB-UHFFFAOYSA-L diiodolead;methanamine Chemical compound NC.I[Pb]I FZHSXDYFFIMBIB-UHFFFAOYSA-L 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
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- 238000005274 electrospray deposition Methods 0.000 description 1
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- 238000010304 firing Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002608 ionic liquid Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052959 stibnite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical compound [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/361—Temperature
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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| PCT/IB2014/062680 WO2015001459A1 (en) | 2013-07-01 | 2014-06-27 | Solar cell and process for producing the same |
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| US9305715B2 (en) | 2014-08-01 | 2016-04-05 | Hunt Energy Enterprises Llc | Method of formulating perovskite solar cell materials |
| KR101540364B1 (ko) * | 2014-11-05 | 2015-07-30 | 한국과학기술연구원 | Zso 기반 페로브스카이트 태양전지 및 이의 제조방법 |
| JP6745214B2 (ja) * | 2015-01-29 | 2020-08-26 | 積水化学工業株式会社 | 太陽電池及び太陽電池の製造方法 |
| JP6486737B2 (ja) | 2015-03-19 | 2019-03-20 | 株式会社東芝 | 光電変換素子 |
| CN107683535B (zh) * | 2015-06-26 | 2020-12-04 | 富士胶片株式会社 | 光电转换元件、太阳能电池、金属盐组合物及光电转换元件的制造方法 |
| JP2017028028A (ja) * | 2015-07-17 | 2017-02-02 | 積水化学工業株式会社 | 固体接合型光電変換素子および固体接合型光電変換素子用ｐ型半導体層 |
| JP6382781B2 (ja) * | 2015-09-15 | 2018-08-29 | 株式会社東芝 | 半導体素子の製造方法および製造装置 |
| EP3357101A4 (en) | 2015-10-02 | 2019-06-12 | Alliance for Sustainable Energy, LLC | HETERO-TRANSITION PEROVSKIT PHOTOVOLTAIC MODULES AND METHOD FOR THE PRODUCTION THEREOF |
| KR101994429B1 (ko) * | 2015-10-27 | 2019-06-28 | 주식회사 엘지화학 | 태양전지의 광흡수체 제조 방법 |
| JP6431513B2 (ja) * | 2015-12-24 | 2018-11-28 | 旭化成株式会社 | 組成物 |
| US20170330693A1 (en) * | 2016-05-11 | 2017-11-16 | Board Of Trustees Of Michigan State University | Interlayer Additives For Highly Efficient And Hysteresis-Free Perovskite-Based Photovoltaic Devices |
| CN106025075B (zh) * | 2016-06-24 | 2018-12-11 | 华南师范大学 | 一种潮湿空气中制备高效率钙钛矿太阳能电池的方法 |
| CN106486602B (zh) * | 2016-10-27 | 2019-01-11 | 北京科技大学 | 一种引入廉价添加剂制备高质量钙钛矿薄膜的方法 |
| US9880458B1 (en) * | 2017-04-17 | 2018-01-30 | Hee Solar, L.L.C. | Hybrid perovskite material processing |
| EP3407361A1 (en) | 2017-05-24 | 2018-11-28 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | Redox melts formed by copper (i)/(ii) complexes as charge transfer and charge storage materials |
| WO2018223134A1 (en) * | 2017-06-02 | 2018-12-06 | Alliance For Sustainable Energy, Llc | Oxide layers and methods of making the same |
| JP2019024035A (ja) * | 2017-07-24 | 2019-02-14 | シャープ株式会社 | 光電変換素子の製造方法 |
| EP3489240A1 (en) | 2017-11-28 | 2019-05-29 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | In-situ cross-linkable hole transporting triazatruxene monomers for optoelectronic devicestr |
| RU2668944C1 (ru) * | 2017-12-08 | 2018-10-05 | Федеральное государственное бюджетное образовательное учреждение высшего образования Северо-Кавказский горно-металлургический институт (государственный технологический университет) (СКГМИ (ГТУ) | Способ изготовления преобразователя солнечной энергии в электрическую на основе перовскитов |
| CN109037459B (zh) * | 2018-08-03 | 2022-03-11 | 辽宁工业大学 | 一种高纯度钙钛矿薄膜制备方法 |
| CN109148694A (zh) * | 2018-08-27 | 2019-01-04 | 领旺（上海）光伏科技有限公司 | 用于柔性钙钛矿太阳能电池的ito电极表面修饰方法 |
| CN111244280A (zh) * | 2018-11-29 | 2020-06-05 | 台南大学 | 具金属氧化物的钙钛矿太阳能电池的制备方法 |
| JP6675505B2 (ja) * | 2019-02-15 | 2020-04-01 | 株式会社東芝 | 光電変換素子の製造方法 |
| CN111628090A (zh) * | 2019-02-27 | 2020-09-04 | 西安交通大学 | 一种多孔骨架层制备方法及太阳能电池吸收层制备方法 |
| CN110534652B (zh) * | 2019-09-10 | 2021-04-02 | 西北工业大学 | 一种钙钛矿太阳能电池及其制备方法 |
| CN111081478B (zh) * | 2019-12-31 | 2022-05-17 | 黑龙江大学 | 稀土均苯三甲酸配合物/三氧化二钇/二氧化钛复合光阳极及其构筑方法 |
| KR20230068438A (ko) | 2020-09-22 | 2023-05-17 | 케일룩스 코포레이션 | 통합 탠덤 태양광 모듈 제작을 위한 방법 및 소자 |
| JP7500383B2 (ja) * | 2020-10-09 | 2024-06-17 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム |
| US20240349587A1 (en) | 2023-04-14 | 2024-10-17 | Kaunas University Of Technology | In-Situ crosslinking of 9,9' -spirobifluorene-based compounds for use in optoelectronic and/or in photoelectrochemical devices and manufacture thereof |
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| EP0758337B1 (en) | 1994-05-02 | 1998-12-16 | Ecole Polytechnique Federale De Lausanne | Phosphonated polypyridyl compounds and their complexes |
| FR2729671B1 (fr) | 1995-01-20 | 1997-04-18 | Michelin & Cie | Enveloppe de pneumatique a base de silice precipitee presentant une resistance au roulement amelioree |
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Also Published As
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| KR20160029790A (ko) | 2016-03-15 |
| EP3017456B1 (en) | 2018-08-01 |
| EP2822009A1 (en) | 2015-01-07 |
| US10332689B2 (en) | 2019-06-25 |
| US20160141112A1 (en) | 2016-05-19 |
| KR102258500B1 (ko) | 2021-06-01 |
| CN105493213A (zh) | 2016-04-13 |
| EP3017456B9 (en) | 2018-12-19 |
| JP6616291B2 (ja) | 2019-12-04 |
| WO2015001459A1 (en) | 2015-01-08 |
| EP3017456A1 (en) | 2016-05-11 |
| AU2014285760A1 (en) | 2018-06-07 |
| CN105493213B (zh) | 2019-08-02 |
| JP2016530703A (ja) | 2016-09-29 |
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