AU2013287214B2 - Composites including silicon-oxy-carbide layers and methods of making the same - Google Patents

Composites including silicon-oxy-carbide layers and methods of making the same Download PDF

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Publication number
AU2013287214B2
AU2013287214B2 AU2013287214A AU2013287214A AU2013287214B2 AU 2013287214 B2 AU2013287214 B2 AU 2013287214B2 AU 2013287214 A AU2013287214 A AU 2013287214A AU 2013287214 A AU2013287214 A AU 2013287214A AU 2013287214 B2 AU2013287214 B2 AU 2013287214B2
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Australia
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composite
soc
layer
thermo
polymeric substrate
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AU2013287214A1 (en
Inventor
Marvi A. MATOS
Laura M. Murphy
Alpana Ranade
Thomas K. Tsotsis
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Boeing Co
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Boeing Co
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/26Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264Up to 3 mils
    • Y10T428/2651 mil or less

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Ceramic Products (AREA)
  • Physical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
AU2013287214A 2012-04-30 2013-03-28 Composites including silicon-oxy-carbide layers and methods of making the same Active AU2013287214B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261640293P 2012-04-30 2012-04-30
US61/640,293 2012-04-30
US13/833,686 2013-03-15
US13/833,686 US10787591B2 (en) 2012-04-30 2013-03-15 Composites including silicon-oxy-carbide layers and methods of making the same
PCT/US2013/034435 WO2014007894A2 (en) 2012-04-30 2013-03-28 Composites including silicon-oxy-carbide layers and methods of making the same

Publications (2)

Publication Number Publication Date
AU2013287214A1 AU2013287214A1 (en) 2014-08-28
AU2013287214B2 true AU2013287214B2 (en) 2016-04-14

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AU2013287214A Active AU2013287214B2 (en) 2012-04-30 2013-03-28 Composites including silicon-oxy-carbide layers and methods of making the same

Country Status (5)

Country Link
US (1) US10787591B2 (enExample)
EP (2) EP3428311B1 (enExample)
JP (2) JP6421114B2 (enExample)
AU (1) AU2013287214B2 (enExample)
WO (1) WO2014007894A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
KR102378021B1 (ko) * 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
CN114875388A (zh) 2017-05-05 2022-08-09 Asm Ip 控股有限公司 用于受控形成含氧薄膜的等离子体增强沉积方法
KR20190065962A (ko) 2017-12-04 2019-06-12 에이에스엠 아이피 홀딩 비.브이. 유전체와 금속 표면 상에 SiOC의 균일한 증착
US12142479B2 (en) 2020-01-17 2024-11-12 Asm Ip Holding B.V. Formation of SiOCN thin films
US12341005B2 (en) 2020-01-17 2025-06-24 Asm Ip Holding B.V. Formation of SiCN thin films

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Also Published As

Publication number Publication date
WO2014007894A2 (en) 2014-01-09
EP3428311A1 (en) 2019-01-16
JP2019022984A (ja) 2019-02-14
EP3428311B1 (en) 2022-05-04
WO2014007894A3 (en) 2014-03-20
US20130288044A1 (en) 2013-10-31
US10787591B2 (en) 2020-09-29
JP2015523917A (ja) 2015-08-20
JP6421114B2 (ja) 2018-11-07
AU2013287214A1 (en) 2014-08-28
EP2844783A2 (en) 2015-03-11
EP2844783B1 (en) 2018-08-15

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