AU2012313362B2 - Varying bandgap solar cell - Google Patents

Varying bandgap solar cell Download PDF

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Publication number
AU2012313362B2
AU2012313362B2 AU2012313362A AU2012313362A AU2012313362B2 AU 2012313362 B2 AU2012313362 B2 AU 2012313362B2 AU 2012313362 A AU2012313362 A AU 2012313362A AU 2012313362 A AU2012313362 A AU 2012313362A AU 2012313362 B2 AU2012313362 B2 AU 2012313362B2
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Australia
Prior art keywords
quantum well
layers
solar cell
layer
gan
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AU2012313362A
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AU2012313362A1 (en
Inventor
Satyanarayan Barik
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Gallium Enterprises Pty Ltd
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Gallium Enterprises Pty Ltd
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Priority claimed from AU2011903944A external-priority patent/AU2011903944A0/en
Application filed by Gallium Enterprises Pty Ltd filed Critical Gallium Enterprises Pty Ltd
Priority to AU2012313362A priority Critical patent/AU2012313362B2/en
Publication of AU2012313362A1 publication Critical patent/AU2012313362A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H10F77/12485—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP comprising nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
AU2012313362A 2011-09-23 2012-09-21 Varying bandgap solar cell Active AU2012313362B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2012313362A AU2012313362B2 (en) 2011-09-23 2012-09-21 Varying bandgap solar cell

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
AU2011903944 2011-09-23
AU2011903944A AU2011903944A0 (en) 2011-09-23 Varying bandgap solar cell
PCT/AU2012/001152 WO2013040659A1 (en) 2011-09-23 2012-09-21 Varying bandgap solar cell
AU2012313362A AU2012313362B2 (en) 2011-09-23 2012-09-21 Varying bandgap solar cell

Publications (2)

Publication Number Publication Date
AU2012313362A1 AU2012313362A1 (en) 2013-05-09
AU2012313362B2 true AU2012313362B2 (en) 2014-08-07

Family

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AU2012313362A Active AU2012313362B2 (en) 2011-09-23 2012-09-21 Varying bandgap solar cell

Country Status (8)

Country Link
US (1) US20150101657A1 (enExample)
EP (1) EP2758996B1 (enExample)
JP (1) JP6335784B2 (enExample)
KR (1) KR102180986B1 (enExample)
CN (1) CN103946988B (enExample)
AU (1) AU2012313362B2 (enExample)
SG (1) SG11201400841XA (enExample)
WO (1) WO2013040659A1 (enExample)

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
CN104201220B (zh) * 2014-08-26 2016-06-29 中国科学院半导体研究所 含有低温插入层的铟镓氮/氮化镓多量子阱太阳能电池
CN105185861A (zh) * 2015-08-05 2015-12-23 辽宁恒华航海电力设备工程有限公司 一种玻璃结构薄膜太阳能电池及制备方法
EP3566249B1 (en) 2017-01-05 2023-11-29 Brilliant Light Power, Inc. Extreme and deep ultraviolet photovoltaic cell
JP6891865B2 (ja) * 2018-10-25 2021-06-18 日亜化学工業株式会社 発光素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11220150A (ja) * 1998-02-02 1999-08-10 Hitachi Ltd 太陽電池

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US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
JPS61120480A (ja) * 1984-11-16 1986-06-07 Hitachi Ltd 光電変換装置
JPS62128182A (ja) * 1985-11-28 1987-06-10 Mitsubishi Electric Corp 太陽電池
US6147296A (en) * 1995-12-06 2000-11-14 University Of Houston Multi-quantum well tandem solar cell
US7193246B1 (en) * 1998-03-12 2007-03-20 Nichia Corporation Nitride semiconductor device
WO2001047031A2 (en) * 1999-12-13 2001-06-28 Swales Aerospace Graded band gap multiple quantum well solar cell
US6437233B1 (en) * 2000-07-25 2002-08-20 Trw Inc. Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor
GB0118150D0 (en) * 2001-07-25 2001-09-19 Imperial College Thermophotovoltaic device
US7119359B2 (en) * 2002-12-05 2006-10-10 Research Foundation Of The City University Of New York Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures
US20050211291A1 (en) * 2004-03-23 2005-09-29 The Boeing Company Solar cell assembly
US8212285B2 (en) * 2004-03-31 2012-07-03 Osram Opto Semiconductors Gmbh Radiation detector
US20050247339A1 (en) * 2004-05-10 2005-11-10 Imperial College Innovations Limited Method of operating a solar cell
US7838869B2 (en) * 2005-10-21 2010-11-23 Georgia State University Research Foundation, Inc. Dual band photodetector
US7629532B2 (en) * 2006-12-29 2009-12-08 Sundiode, Inc. Solar cell having active region with nanostructures having energy wells
US20090173373A1 (en) * 2008-01-07 2009-07-09 Wladyslaw Walukiewicz Group III-Nitride Solar Cell with Graded Compositions
WO2009142677A2 (en) * 2008-03-24 2009-11-26 The Board Of Trustees Of The Leland Stanford Junior University Quantum dot solar cell with quantum dot bandgap gradients
GB2463905B (en) * 2008-09-29 2012-06-06 Jds Uniphase Corp Photovoltaic cell
JP5424502B2 (ja) * 2009-08-06 2014-02-26 国立大学法人 千葉大学 光電変換装置
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CN102103990B (zh) 2009-12-17 2012-11-21 上海蓝光科技有限公司 用于光电器件的多量子阱结构的制备方法

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH11220150A (ja) * 1998-02-02 1999-08-10 Hitachi Ltd 太陽電池

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BARNHAM, K., 'A new approach to high-efficiency multi-band-gap solar cells', Journal of Applied Physics, 1990, Vol. 67, No. 7, pages 3490-3493 *

Also Published As

Publication number Publication date
SG11201400841XA (en) 2014-04-28
KR102180986B1 (ko) 2020-11-20
CN103946988B (zh) 2016-11-16
WO2013040659A1 (en) 2013-03-28
EP2758996A1 (en) 2014-07-30
HK1200242A1 (en) 2015-07-31
EP2758996A4 (en) 2015-05-27
JP6335784B2 (ja) 2018-05-30
CN103946988A (zh) 2014-07-23
AU2012313362A1 (en) 2013-05-09
US20150101657A1 (en) 2015-04-16
EP2758996B1 (en) 2020-04-01
KR20140066219A (ko) 2014-05-30
JP2014531758A (ja) 2014-11-27

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