KR102180986B1 - 가변 밴드갭 태양 전지 - Google Patents

가변 밴드갭 태양 전지 Download PDF

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Publication number
KR102180986B1
KR102180986B1 KR1020147009265A KR20147009265A KR102180986B1 KR 102180986 B1 KR102180986 B1 KR 102180986B1 KR 1020147009265 A KR1020147009265 A KR 1020147009265A KR 20147009265 A KR20147009265 A KR 20147009265A KR 102180986 B1 KR102180986 B1 KR 102180986B1
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South Korea
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quantum well
layer
layers
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solar cell
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Expired - Fee Related
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KR1020147009265A
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English (en)
Korean (ko)
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KR20140066219A (ko
Inventor
사티아나라얀 바릭
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갈리움 엔터프라이지즈 피티와이 엘티디
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H10F77/12485—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP comprising nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
KR1020147009265A 2011-09-23 2012-09-21 가변 밴드갭 태양 전지 Expired - Fee Related KR102180986B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AU2011903944 2011-09-23
AU2011903944A AU2011903944A0 (en) 2011-09-23 Varying bandgap solar cell
PCT/AU2012/001152 WO2013040659A1 (en) 2011-09-23 2012-09-21 Varying bandgap solar cell

Publications (2)

Publication Number Publication Date
KR20140066219A KR20140066219A (ko) 2014-05-30
KR102180986B1 true KR102180986B1 (ko) 2020-11-20

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KR1020147009265A Expired - Fee Related KR102180986B1 (ko) 2011-09-23 2012-09-21 가변 밴드갭 태양 전지

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US (1) US20150101657A1 (enExample)
EP (1) EP2758996B1 (enExample)
JP (1) JP6335784B2 (enExample)
KR (1) KR102180986B1 (enExample)
CN (1) CN103946988B (enExample)
AU (1) AU2012313362B2 (enExample)
SG (1) SG11201400841XA (enExample)
WO (1) WO2013040659A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104201220B (zh) * 2014-08-26 2016-06-29 中国科学院半导体研究所 含有低温插入层的铟镓氮/氮化镓多量子阱太阳能电池
CN105185861A (zh) * 2015-08-05 2015-12-23 辽宁恒华航海电力设备工程有限公司 一种玻璃结构薄膜太阳能电池及制备方法
EP3566249B1 (en) 2017-01-05 2023-11-29 Brilliant Light Power, Inc. Extreme and deep ultraviolet photovoltaic cell
JP6891865B2 (ja) * 2018-10-25 2021-06-18 日亜化学工業株式会社 発光素子

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040135222A1 (en) 2002-12-05 2004-07-15 Research Foundation Of City University Of New York Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures
US20050211291A1 (en) 2004-03-23 2005-09-29 The Boeing Company Solar cell assembly
US20050247339A1 (en) 2004-05-10 2005-11-10 Imperial College Innovations Limited Method of operating a solar cell
US20070158638A1 (en) 2005-10-21 2007-07-12 Perera A G U Dual band photodetector
KR100753147B1 (ko) * 1998-03-12 2007-08-30 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
US20080156366A1 (en) 2006-12-29 2008-07-03 Sundiode, Inc. Solar cell having active region with nanostructures having energy wells
US20080237633A1 (en) 2004-03-31 2008-10-02 Arndt Jaeger Radiation Detector
US20080251118A1 (en) 2001-07-25 2008-10-16 Imperial Innovations Limited Photovoltaic device

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Publication number Priority date Publication date Assignee Title
US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
JPS61120480A (ja) * 1984-11-16 1986-06-07 Hitachi Ltd 光電変換装置
JPS62128182A (ja) * 1985-11-28 1987-06-10 Mitsubishi Electric Corp 太陽電池
US6147296A (en) * 1995-12-06 2000-11-14 University Of Houston Multi-quantum well tandem solar cell
JP2945647B2 (ja) * 1998-02-02 1999-09-06 株式会社日立製作所 太陽電池
WO2001047031A2 (en) * 1999-12-13 2001-06-28 Swales Aerospace Graded band gap multiple quantum well solar cell
US6437233B1 (en) * 2000-07-25 2002-08-20 Trw Inc. Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor
US20090173373A1 (en) * 2008-01-07 2009-07-09 Wladyslaw Walukiewicz Group III-Nitride Solar Cell with Graded Compositions
WO2009142677A2 (en) * 2008-03-24 2009-11-26 The Board Of Trustees Of The Leland Stanford Junior University Quantum dot solar cell with quantum dot bandgap gradients
GB2463905B (en) * 2008-09-29 2012-06-06 Jds Uniphase Corp Photovoltaic cell
JP5424502B2 (ja) * 2009-08-06 2014-02-26 国立大学法人 千葉大学 光電変換装置
US8106421B2 (en) * 2009-08-21 2012-01-31 University Of Seoul Industry Cooperation Foundation Photovoltaic devices
CN102103990B (zh) 2009-12-17 2012-11-21 上海蓝光科技有限公司 用于光电器件的多量子阱结构的制备方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100753147B1 (ko) * 1998-03-12 2007-08-30 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
US20080251118A1 (en) 2001-07-25 2008-10-16 Imperial Innovations Limited Photovoltaic device
US20040135222A1 (en) 2002-12-05 2004-07-15 Research Foundation Of City University Of New York Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures
US20050211291A1 (en) 2004-03-23 2005-09-29 The Boeing Company Solar cell assembly
US20080237633A1 (en) 2004-03-31 2008-10-02 Arndt Jaeger Radiation Detector
US20050247339A1 (en) 2004-05-10 2005-11-10 Imperial College Innovations Limited Method of operating a solar cell
US20070158638A1 (en) 2005-10-21 2007-07-12 Perera A G U Dual band photodetector
US20080156366A1 (en) 2006-12-29 2008-07-03 Sundiode, Inc. Solar cell having active region with nanostructures having energy wells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
K. Y. Lai et al., "Effect of indium fluctuation on the photo -voltaic characteristics of InGaN/GaN multiple quantum well solar cells", Appl. Phys. Lett., Vol.96, 081103*

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Publication number Publication date
SG11201400841XA (en) 2014-04-28
CN103946988B (zh) 2016-11-16
WO2013040659A1 (en) 2013-03-28
EP2758996A1 (en) 2014-07-30
HK1200242A1 (en) 2015-07-31
EP2758996A4 (en) 2015-05-27
JP6335784B2 (ja) 2018-05-30
CN103946988A (zh) 2014-07-23
AU2012313362B2 (en) 2014-08-07
AU2012313362A1 (en) 2013-05-09
US20150101657A1 (en) 2015-04-16
EP2758996B1 (en) 2020-04-01
KR20140066219A (ko) 2014-05-30
JP2014531758A (ja) 2014-11-27

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