SG11201400841XA - Varying bandgap solar cell - Google Patents

Varying bandgap solar cell

Info

Publication number
SG11201400841XA
SG11201400841XA SG11201400841XA SG11201400841XA SG11201400841XA SG 11201400841X A SG11201400841X A SG 11201400841XA SG 11201400841X A SG11201400841X A SG 11201400841XA SG 11201400841X A SG11201400841X A SG 11201400841XA SG 11201400841X A SG11201400841X A SG 11201400841XA
Authority
SG
Singapore
Prior art keywords
solar cell
bandgap solar
varying bandgap
varying
cell
Prior art date
Application number
SG11201400841XA
Other languages
English (en)
Inventor
Satyanarayan Barik
Original Assignee
Gallium Entpr Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2011903944A external-priority patent/AU2011903944A0/en
Application filed by Gallium Entpr Pty Ltd filed Critical Gallium Entpr Pty Ltd
Publication of SG11201400841XA publication Critical patent/SG11201400841XA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H10F77/12485—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP comprising nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
SG11201400841XA 2011-09-23 2012-09-21 Varying bandgap solar cell SG11201400841XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AU2011903944A AU2011903944A0 (en) 2011-09-23 Varying bandgap solar cell
PCT/AU2012/001152 WO2013040659A1 (en) 2011-09-23 2012-09-21 Varying bandgap solar cell

Publications (1)

Publication Number Publication Date
SG11201400841XA true SG11201400841XA (en) 2014-04-28

Family

ID=47913689

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201400841XA SG11201400841XA (en) 2011-09-23 2012-09-21 Varying bandgap solar cell

Country Status (8)

Country Link
US (1) US20150101657A1 (enExample)
EP (1) EP2758996B1 (enExample)
JP (1) JP6335784B2 (enExample)
KR (1) KR102180986B1 (enExample)
CN (1) CN103946988B (enExample)
AU (1) AU2012313362B2 (enExample)
SG (1) SG11201400841XA (enExample)
WO (1) WO2013040659A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104201220B (zh) * 2014-08-26 2016-06-29 中国科学院半导体研究所 含有低温插入层的铟镓氮/氮化镓多量子阱太阳能电池
CN105185861A (zh) * 2015-08-05 2015-12-23 辽宁恒华航海电力设备工程有限公司 一种玻璃结构薄膜太阳能电池及制备方法
EP3566249B1 (en) 2017-01-05 2023-11-29 Brilliant Light Power, Inc. Extreme and deep ultraviolet photovoltaic cell
JP6891865B2 (ja) * 2018-10-25 2021-06-18 日亜化学工業株式会社 発光素子

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
JPS61120480A (ja) * 1984-11-16 1986-06-07 Hitachi Ltd 光電変換装置
JPS62128182A (ja) * 1985-11-28 1987-06-10 Mitsubishi Electric Corp 太陽電池
US6147296A (en) * 1995-12-06 2000-11-14 University Of Houston Multi-quantum well tandem solar cell
JP2945647B2 (ja) * 1998-02-02 1999-09-06 株式会社日立製作所 太陽電池
AU2746899A (en) * 1998-03-12 1999-09-27 Nichia Chemical Industries, Ltd. Nitride semiconductor device
WO2001047031A2 (en) * 1999-12-13 2001-06-28 Swales Aerospace Graded band gap multiple quantum well solar cell
US6437233B1 (en) * 2000-07-25 2002-08-20 Trw Inc. Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor
GB0118150D0 (en) * 2001-07-25 2001-09-19 Imperial College Thermophotovoltaic device
US7119359B2 (en) * 2002-12-05 2006-10-10 Research Foundation Of The City University Of New York Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures
US20050211291A1 (en) * 2004-03-23 2005-09-29 The Boeing Company Solar cell assembly
KR20130036337A (ko) * 2004-03-31 2013-04-11 오스람 옵토 세미컨덕터스 게엠베하 방사선 검출기
US20050247339A1 (en) * 2004-05-10 2005-11-10 Imperial College Innovations Limited Method of operating a solar cell
US7838869B2 (en) * 2005-10-21 2010-11-23 Georgia State University Research Foundation, Inc. Dual band photodetector
US7629532B2 (en) * 2006-12-29 2009-12-08 Sundiode, Inc. Solar cell having active region with nanostructures having energy wells
US20090173373A1 (en) * 2008-01-07 2009-07-09 Wladyslaw Walukiewicz Group III-Nitride Solar Cell with Graded Compositions
WO2009142677A2 (en) * 2008-03-24 2009-11-26 The Board Of Trustees Of The Leland Stanford Junior University Quantum dot solar cell with quantum dot bandgap gradients
GB2463905B (en) * 2008-09-29 2012-06-06 Jds Uniphase Corp Photovoltaic cell
WO2011016537A1 (ja) * 2009-08-06 2011-02-10 国立大学法人千葉大学 光電変換装置
US8106421B2 (en) * 2009-08-21 2012-01-31 University Of Seoul Industry Cooperation Foundation Photovoltaic devices
CN102103990B (zh) 2009-12-17 2012-11-21 上海蓝光科技有限公司 用于光电器件的多量子阱结构的制备方法

Also Published As

Publication number Publication date
EP2758996A4 (en) 2015-05-27
WO2013040659A1 (en) 2013-03-28
KR102180986B1 (ko) 2020-11-20
CN103946988A (zh) 2014-07-23
JP2014531758A (ja) 2014-11-27
JP6335784B2 (ja) 2018-05-30
AU2012313362B2 (en) 2014-08-07
KR20140066219A (ko) 2014-05-30
EP2758996A1 (en) 2014-07-30
EP2758996B1 (en) 2020-04-01
US20150101657A1 (en) 2015-04-16
CN103946988B (zh) 2016-11-16
HK1200242A1 (en) 2015-07-31
AU2012313362A1 (en) 2013-05-09

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