AU2011269874B2 - Substrate with buffer layer for oriented nanowire growth - Google Patents

Substrate with buffer layer for oriented nanowire growth Download PDF

Info

Publication number
AU2011269874B2
AU2011269874B2 AU2011269874A AU2011269874A AU2011269874B2 AU 2011269874 B2 AU2011269874 B2 AU 2011269874B2 AU 2011269874 A AU2011269874 A AU 2011269874A AU 2011269874 A AU2011269874 A AU 2011269874A AU 2011269874 B2 AU2011269874 B2 AU 2011269874B2
Authority
AU
Australia
Prior art keywords
buffer layer
layers
sub
layer
nanowire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU2011269874A
Other languages
English (en)
Other versions
AU2011269874A1 (en
Inventor
Jonas Ohlsson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GLO AB
Original Assignee
GLO AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GLO AB filed Critical GLO AB
Publication of AU2011269874A1 publication Critical patent/AU2011269874A1/en
Application granted granted Critical
Publication of AU2011269874B2 publication Critical patent/AU2011269874B2/en
Ceased legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2011269874A 2010-06-24 2011-06-27 Substrate with buffer layer for oriented nanowire growth Ceased AU2011269874B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE1050700-2 2010-06-24
SE1050700 2010-06-24
PCT/SE2011/050845 WO2011162715A1 (en) 2010-06-24 2011-06-27 Substrate with buffer layer for oriented nanowire growth

Publications (2)

Publication Number Publication Date
AU2011269874A1 AU2011269874A1 (en) 2013-01-10
AU2011269874B2 true AU2011269874B2 (en) 2015-03-26

Family

ID=45371681

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2011269874A Ceased AU2011269874B2 (en) 2010-06-24 2011-06-27 Substrate with buffer layer for oriented nanowire growth

Country Status (9)

Country Link
US (1) US9947829B2 (enExample)
EP (1) EP2586062A4 (enExample)
JP (1) JP5981426B2 (enExample)
KR (1) KR20130138657A (enExample)
CN (1) CN103098216A (enExample)
AU (1) AU2011269874B2 (enExample)
CA (1) CA2802500A1 (enExample)
SG (1) SG186312A1 (enExample)
WO (1) WO2011162715A1 (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201021112D0 (en) 2010-12-13 2011-01-26 Ntnu Technology Transfer As Nanowires
US9202945B2 (en) * 2011-12-23 2015-12-01 Nokia Technologies Oy Graphene-based MIM diode and associated methods
GB201200355D0 (en) * 2012-01-10 2012-02-22 Norwegian Univ Sci & Tech Ntnu Nanowires
CN103374751B (zh) * 2012-04-25 2016-06-15 清华大学 具有微构造的外延结构体的制备方法
GB201211038D0 (en) 2012-06-21 2012-08-01 Norwegian Univ Sci & Tech Ntnu Solar cells
DE102012109594A1 (de) * 2012-10-09 2014-04-10 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
FR2997557B1 (fr) * 2012-10-26 2016-01-01 Commissariat Energie Atomique Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif
WO2014066357A1 (en) 2012-10-26 2014-05-01 Glo Ab Nanowire led structure and method for manufacturing the same
FR2997420B1 (fr) 2012-10-26 2017-02-24 Commissariat Energie Atomique Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
WO2014066379A1 (en) 2012-10-26 2014-05-01 Glo Ab Nanowire sized opto-electronic structure and method for modifying selected portions of same
JP6322197B2 (ja) 2012-10-26 2018-05-09 グロ アーベーＧｌｏ Ａｂ ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。
KR101603207B1 (ko) * 2013-01-29 2016-03-14 삼성전자주식회사 나노구조 반도체 발광소자 제조방법
DE102013009824A1 (de) * 2013-06-11 2014-12-11 Forschungsverbund Berlin E.V. Halbleitervorrichtung mit Nanosäulen aus Gruppe III-Nitridmaterial und Herstellungsverfahren für eine solche Halbleitervorrichtung
WO2014204906A1 (en) 2013-06-18 2014-12-24 Glo-Usa, Inc. Insulating layer for planarization and definition of the active region of a nanowire device
FR3007574B1 (fr) * 2013-06-21 2015-07-17 Commissariat Energie Atomique Procede de fabrication d'une structure semiconductrice et composant semiconducteur comportant une telle structure semiconductrice
GB201311101D0 (en) 2013-06-21 2013-08-07 Norwegian Univ Sci & Tech Ntnu Semiconducting Films
US8999737B2 (en) 2013-08-27 2015-04-07 Glo Ab Method of making molded LED package
US9142745B2 (en) 2013-08-27 2015-09-22 Glo Ab Packaged LED device with castellations
WO2015031179A1 (en) 2013-08-27 2015-03-05 Glo Ab Molded led package and method of making same
US9972750B2 (en) 2013-12-13 2018-05-15 Glo Ab Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs
EP3084847B1 (en) * 2013-12-17 2018-02-14 Glo Ab Iii-nitride nanowire led with strain modified surface active region and method of making thereof
KR102285786B1 (ko) 2014-01-20 2021-08-04 삼성전자 주식회사 반도체 발광 소자
FR3020177B1 (fr) * 2014-04-22 2016-05-13 Commissariat Energie Atomique Dispositif optoelectronique a rendement d'extraction lumineuse ameliore
KR102198694B1 (ko) 2014-07-11 2021-01-06 삼성전자주식회사 반도체 발광소자 및 반도체 발광소자 제조방법
KR102188494B1 (ko) * 2014-07-21 2020-12-09 삼성전자주식회사 반도체 발광소자, 반도체 발광소자 제조방법 및 반도체 발광소자 패키지 제조방법
KR20170066319A (ko) 2014-08-12 2017-06-14 글로 에이비 스트레인 수정된 표면 활성 영역을 가진 iii-질화물 나노와이어 led 및 이의 제조 방법
KR102164796B1 (ko) * 2014-08-28 2020-10-14 삼성전자주식회사 나노구조 반도체 발광소자
KR102337405B1 (ko) 2014-09-05 2021-12-13 삼성전자주식회사 나노구조 반도체 발광소자
KR102266615B1 (ko) 2014-11-17 2021-06-21 삼성전자주식회사 전계 효과 트랜지스터를 포함하는 반도체 소자 및 그 제조 방법
KR102237149B1 (ko) * 2014-11-18 2021-04-07 엘지이노텍 주식회사 발광소자 및 조명시스템
FR3029683B1 (fr) * 2014-12-05 2017-01-13 Commissariat Energie Atomique Dispositif electronique a element filaire s'etendant a partir d'une couche electriquement conductrice comportant du carbure de zirconium ou du carbure de hafnium
CA2992154A1 (en) 2015-07-13 2017-01-19 Crayonano As Nanowires/nanopyramids shaped light emitting diodes and photodetectors
CA2992156A1 (en) 2015-07-13 2017-01-16 Crayonano As Nanowires or nanopyramids grown on graphitic substrate
US10714337B2 (en) 2015-07-31 2020-07-14 Crayonano As Process for growing nanowires or nanopyramids on graphitic substrates
EP3144957A1 (en) * 2015-09-15 2017-03-22 Technische Universität München A method for fabricating a nanostructure
US11322652B2 (en) * 2015-12-14 2022-05-03 Ostendo Technologies, Inc. Methods for producing composite GaN nanocolumns and light emitting structures made from the methods
FR3053054B1 (fr) 2016-06-28 2021-04-02 Commissariat Energie Atomique Structure de nucleation adaptee a la croissance epitaxiale d’elements semiconducteurs tridimensionnels
US10480719B2 (en) * 2016-08-16 2019-11-19 King Abdullah University Of Science And Technology Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications
GB201701829D0 (en) * 2017-02-03 2017-03-22 Norwegian Univ Of Science And Tech (Ntnu) Device
GB201705755D0 (en) 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
US10418499B2 (en) 2017-06-01 2019-09-17 Glo Ab Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof
US10707374B2 (en) 2017-09-15 2020-07-07 Glo Ab Etendue enhancement for light emitting diode subpixels
KR102701758B1 (ko) * 2018-11-27 2024-09-04 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 발광 소자를 구비한 표시 장치
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
FR3096834B1 (fr) * 2019-05-28 2022-11-25 Aledia Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite
CN110190162A (zh) * 2019-06-04 2019-08-30 深圳扑浪创新科技有限公司 一种led芯片的外延结构及其制备方法
GB201910348D0 (en) 2019-07-19 2019-09-04 Univ Sheffield LED Arrays
GB201910352D0 (en) * 2019-07-19 2019-09-04 Univ Sheffield LED Arrays
GB201913701D0 (en) * 2019-09-23 2019-11-06 Crayonano As Composition of matter
CN110676283B (zh) * 2019-10-16 2022-03-25 福州大学 一种基于纳米线的μLED显示设计方法
KR102221285B1 (ko) * 2019-12-09 2021-03-03 한양대학교 산학협력단 이산화티타늄 나노막대의 성장방법
US20240191391A1 (en) * 2021-04-16 2024-06-13 Kyocera Corporation SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APPARATUS THEREFOR, GaN-BASED CRYSTAL BODY, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
JP2023094009A (ja) * 2021-12-23 2023-07-05 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
CN115842077B (zh) * 2023-02-10 2023-04-28 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080036038A1 (en) * 2006-03-10 2008-02-14 Hersee Stephen D PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6046465A (en) * 1998-04-17 2000-04-04 Hewlett-Packard Company Buried reflectors for light emitters in epitaxial material and method for producing same
JP4613373B2 (ja) * 1999-07-19 2011-01-19 ソニー株式会社 Ｉｉｉ族ナイトライド化合物半導体薄膜の形成方法および半導体素子の製造方法
US6599564B1 (en) * 2000-08-09 2003-07-29 The Board Of Trustees Of The University Of Illinois Substrate independent distributed bragg reflector and formation method
US6649287B2 (en) 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US6523188B1 (en) 2002-01-14 2003-02-25 Kiefer Pool Equipment Co. Top for starting platform for swimming pool
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US6818061B2 (en) 2003-04-10 2004-11-16 Honeywell International, Inc. Method for growing single crystal GaN on silicon
JP3821232B2 (ja) 2003-04-15 2006-09-13 日立電線株式会社 エピタキシャル成長用多孔質基板およびその製造方法ならびにｉｉｉ族窒化物半導体基板の製造方法
JP2006237556A (ja) * 2005-01-31 2006-09-07 Kanagawa Acad Of Sci & Technol ＧａＮ膜生成方法及び半導体素子並びにＩＩＩ族窒化物の薄膜生成方法及びＩＩＩ族窒化物の薄膜を有する半導体素子
US7365374B2 (en) 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
JP2008544567A (ja) 2005-06-27 2008-12-04 ソウル オプト デバイス カンパニー リミテッド 窒化物多重量子ウェルを有するナノロッドアレイ構造の発光ダイオード、その製造方法、及びナノロッド
KR100753152B1 (ko) * 2005-08-12 2007-08-30 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
CN101882656B (zh) * 2005-10-29 2014-03-12 三星显示有限公司 半导体器件及其制造方法
US20070257264A1 (en) 2005-11-10 2007-11-08 Hersee Stephen D CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS
TWI519686B (zh) * 2005-12-15 2016-02-01 聖戈班晶體探測器公司 低差排密度氮化鎵（ＧａＮ）之生長方法
EP3731283A1 (de) * 2006-02-23 2020-10-28 AZUR SPACE Solar Power GmbH Nitridhalbleiterprodukt
JP5483887B2 (ja) 2006-03-08 2014-05-07 クナノ アーベー Ｓｉ上のエピタキシャルな半導体ナノワイヤの金属無しでの合成方法
CN101681813B (zh) 2007-01-12 2012-07-11 昆南诺股份有限公司 氮化物纳米线及其制造方法
GB0702560D0 (en) 2007-02-09 2007-03-21 Univ Bath Production of Semiconductor devices
CA2745269A1 (en) * 2008-01-28 2009-08-06 Amit Goyal [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices
KR101515100B1 (ko) * 2008-10-21 2015-04-24 삼성전자주식회사 발광 다이오드 및 그 제조 방법
US8097999B2 (en) * 2009-04-27 2012-01-17 University Of Seoul Industry Cooperation Foundation Piezoelectric actuator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080036038A1 (en) * 2006-03-10 2008-02-14 Hersee Stephen D PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL

Also Published As

Publication number Publication date
WO2011162715A9 (en) 2012-11-22
CN103098216A (zh) 2013-05-08
CA2802500A1 (en) 2011-12-29
WO2011162715A1 (en) 2011-12-29
AU2011269874A1 (en) 2013-01-10
US20130221322A1 (en) 2013-08-29
KR20130138657A (ko) 2013-12-19
EP2586062A1 (en) 2013-05-01
US9947829B2 (en) 2018-04-17
JP2013532621A (ja) 2013-08-19
JP5981426B2 (ja) 2016-08-31
EP2586062A4 (en) 2015-06-03
SG186312A1 (en) 2013-02-28

Similar Documents

Publication Publication Date Title
AU2011269874B2 (en) Substrate with buffer layer for oriented nanowire growth
EP3610518B1 (en) Nanostructure
CN101681813B (zh) 氮化物纳米线及其制造方法
US9793432B2 (en) Light emitting devices and methods of manufacturing the same
JP2008266064A (ja) 半導体素子用基板、及びその製造方法
JPH10321911A (ja) 単結晶シリコン上に化合物半導体のエピタキシヤル層を製造する方法及びそれにより製造された発光ダイオード
JP5638198B2 (ja) ミスカット基板上のレーザダイオード配向
US7859086B2 (en) Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same
WO2016051078A1 (fr) Dispositif optoelectronique a elements semiconducteurs tridimensionnels
US7872268B2 (en) Substrate buffer structure for group III nitride devices
EP3224858A1 (fr) Dispositif optoélectronique á éléments semiconducteurs tridimensionnels et son procédé de fabrication
CN103872200B (zh) 形成半导体层的方法、半导体发光器件及其制造方法
HK1181191A (en) Substrate with buffer layer for oriented nanowire growth
EP4345922B1 (en) Gan-on-si epiwafer comprising a strain-decoupling sub-stack
US12295185B2 (en) Epitaxial substrate having a 2D material interposer, method for manufacturing the epitaxial substrate, and device prepared from the epitaxial substrate

Legal Events

Date Code Title Description
FGA Letters patent sealed or granted (standard patent)
MK14 Patent ceased section 143(a) (annual fees not paid) or expired