AU2006224282B2 - System and process for high-density,low-energy plasma enhanced vapor phase epitaxy - Google Patents

System and process for high-density,low-energy plasma enhanced vapor phase epitaxy Download PDF

Info

Publication number
AU2006224282B2
AU2006224282B2 AU2006224282A AU2006224282A AU2006224282B2 AU 2006224282 B2 AU2006224282 B2 AU 2006224282B2 AU 2006224282 A AU2006224282 A AU 2006224282A AU 2006224282 A AU2006224282 A AU 2006224282A AU 2006224282 B2 AU2006224282 B2 AU 2006224282B2
Authority
AU
Australia
Prior art keywords
plasma
sources
substrate
gases
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU2006224282A
Other languages
English (en)
Other versions
AU2006224282A1 (en
Inventor
Hans Von Kaenel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon Metco AG
Original Assignee
Sulzer Metco AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sulzer Metco AG filed Critical Sulzer Metco AG
Publication of AU2006224282A1 publication Critical patent/AU2006224282A1/en
Assigned to SULZER METCO AG reassignment SULZER METCO AG Request for Assignment Assignors: EPISPEED S.A.
Application granted granted Critical
Publication of AU2006224282B2 publication Critical patent/AU2006224282B2/en
Priority to AU2012202511A priority Critical patent/AU2012202511B2/en
Ceased legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Lasers (AREA)
AU2006224282A 2005-02-28 2006-02-28 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy Ceased AU2006224282B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2012202511A AU2012202511B2 (en) 2005-02-28 2012-05-01 System and Process for High-Density, Low-Energy Plasma Enhanced Vapor Phase Epitaxy

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US65720805P 2005-02-28 2005-02-28
US60/657208 2005-02-28
PCT/IB2006/000421 WO2006097804A2 (en) 2005-02-28 2006-02-28 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy

Related Child Applications (1)

Application Number Title Priority Date Filing Date
AU2012202511A Division AU2012202511B2 (en) 2005-02-28 2012-05-01 System and Process for High-Density, Low-Energy Plasma Enhanced Vapor Phase Epitaxy

Publications (2)

Publication Number Publication Date
AU2006224282A1 AU2006224282A1 (en) 2006-09-21
AU2006224282B2 true AU2006224282B2 (en) 2012-02-02

Family

ID=36972965

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2006224282A Ceased AU2006224282B2 (en) 2005-02-28 2006-02-28 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy

Country Status (10)

Country Link
US (2) US8647434B2 (enExample)
EP (1) EP1872383A2 (enExample)
JP (1) JP5214251B2 (enExample)
KR (2) KR101366181B1 (enExample)
CN (1) CN101128911B (enExample)
AU (1) AU2006224282B2 (enExample)
CA (1) CA2597623C (enExample)
RU (1) RU2462786C2 (enExample)
SG (1) SG160345A1 (enExample)
WO (1) WO2006097804A2 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE412999T1 (de) * 2003-09-05 2008-11-15 Epispeed S A Durch lepecvd und mocvd auf silizium hergestellte gaas/gaas-laser
KR100754404B1 (ko) * 2006-05-25 2007-08-31 삼성전자주식회사 확산튜브와, 확산공정용 도펀트 소스 및 상기 확산튜브와도펀트 소스를 이용한 확산방법
JP5041883B2 (ja) * 2007-06-07 2012-10-03 昭和電工株式会社 Ｉｉｉ族窒化物半導体層の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法
JP4982259B2 (ja) * 2007-06-14 2012-07-25 昭和電工株式会社 Ｉｉｉ族窒化物化合物半導体発光素子の製造方法
CA2703499A1 (en) * 2007-08-17 2009-02-26 Epispeed Sa Apparatus and method for producing epitaxial layers
CN102171795A (zh) 2008-10-03 2011-08-31 维易科加工设备股份有限公司 气相外延系统
CN101494151B (zh) * 2009-03-05 2013-11-13 苏州晶能科技有限公司 高效率的一维线性等离子体清洗磁控阴极装置
JP2011213557A (ja) * 2010-04-01 2011-10-27 Hitachi Cable Ltd 導電性ｉｉｉ族窒化物単結晶基板の製造方法
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
US8884525B2 (en) * 2011-03-22 2014-11-11 Advanced Energy Industries, Inc. Remote plasma source generating a disc-shaped plasma
DE102012201953A1 (de) * 2012-02-09 2013-08-14 Singulus Technologies Ag Verfahren und Vorrichtung zur Passivierung von Solarzellen mit einer Aluminiumoxid-Schicht
CN102534511B (zh) * 2012-02-28 2013-10-16 东北大学 一种气相沉积薄膜的装置及其使用方法
CN104428444B (zh) * 2012-07-13 2016-09-21 盖列姆企业私人有限公司 膜形成装置及方法
KR101456549B1 (ko) * 2012-09-10 2014-10-31 한국표준과학연구원 플라즈마 도움 화학 기상 증착 장치 및 플라즈마 도움 화학 기상 증착 방법
RU2548578C2 (ru) * 2013-08-19 2015-04-20 Валерий Анатольевич Буробин Способ получения эпитаксиального слоя бинарного полупроводникового материала на монокристаллической подложке посредством металлоорганического химического осаждения из газовой фазы
US9378941B2 (en) 2013-10-02 2016-06-28 Applied Materials, Inc. Interface treatment of semiconductor surfaces with high density low energy plasma
CN104752162A (zh) * 2013-12-31 2015-07-01 江西省昌大光电科技有限公司 一种半绝缘GaN薄膜及其制备方法
CN103806093B (zh) * 2014-02-17 2017-01-18 清华大学 基于icp的化合物半导体的外延生长装置及方法
RU2578870C2 (ru) * 2014-03-26 2016-03-27 Открытое акционерное общество "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (ОАО "НИФХИ им. Л.Я. Карпова") Способ выращивания пленки нитрида галлия
CN103938272A (zh) * 2014-04-03 2014-07-23 清华大学 等离子体辅助的外延生长装置及方法
RU2570099C1 (ru) * 2014-08-05 2015-12-10 Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") Способ изготовления полупроводниковой гетероструктуры
WO2016031039A1 (ja) * 2014-08-29 2016-03-03 創光科学株式会社 エピタキシャル成長用テンプレート及びその作製方法、並びに、窒化物半導体装置
TWI728197B (zh) 2016-10-24 2021-05-21 美商克萊譚克公司 整合至一計量及/或檢測工具中之製程模組
WO2019005144A1 (en) * 2017-06-30 2019-01-03 Intel Corporation HIGH FLOW MOLECULAR BEAM EPITAXY AND SELECTIVE EPITAXIAL APPARATUS
RU2657674C1 (ru) * 2017-08-14 2018-06-14 Федеральное государственное бюджетное учреждение науки Институт общей и неорганической химии им. Н.С. Курнакова Российской академии наук (ИОНХ РАН) Способ получения гетероструктуры Mg(Fe1-xGax)2O4/Si со стабильной межфазной границей
CN107675141B (zh) * 2017-10-25 2023-08-04 南昌大学 一种用于制备氮化物材料的装置
US10892137B2 (en) * 2018-09-12 2021-01-12 Entegris, Inc. Ion implantation processes and apparatus using gallium
DE102018220678A1 (de) * 2018-11-30 2020-06-04 Thyssenkrupp Ag Verfahren zum PVD-Beschichten von Werkstücken
RU2715080C1 (ru) * 2018-12-18 2020-02-25 Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук (ФИАН) Способ наращивания монокристаллических слоёв полупроводниковых структур
CN109817518B (zh) * 2019-01-18 2020-03-10 重庆市妙格科技有限公司 一种发光二极管原材料加热磷扩装置
CN109830419B (zh) * 2019-01-24 2020-05-19 中国原子能科学研究院 一种微型潘宁离子源
WO2020215189A1 (en) * 2019-04-22 2020-10-29 Peng Du Mbe system with direct evaporation pump to cold panel
RU2723477C1 (ru) * 2019-04-26 2020-06-11 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" Узел фиксации нагреваемой подложки в вакуумной камере (варианты)
US11150120B2 (en) 2019-09-22 2021-10-19 Applied Materials, Inc. Low temperature thermal flow ratio controller
JP7577093B2 (ja) * 2022-06-29 2024-11-01 東京エレクトロン株式会社 プラズマ処理システムおよびプラズマ処理方法
CN115992346B (zh) * 2023-02-16 2024-08-06 北京理工大学 一种多功能的离子沉积薄膜制备装置及薄膜沉积方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001065590A2 (en) * 2000-03-02 2001-09-07 Tokyo Electron Limited Esrf source for ion plating epitaxial deposition

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4368092A (en) 1981-04-02 1983-01-11 The Perkin-Elmer Corporation Apparatus for the etching for semiconductor devices
JPH0652716B2 (ja) * 1984-08-24 1994-07-06 日本電信電話株式会社 半導体結晶性膜製造装置
JPS61135126A (ja) * 1984-12-06 1986-06-23 Hitachi Ltd プラズマ処理装置
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
JPH03146656A (ja) * 1989-11-02 1991-06-21 Hitachi Ltd 膜形成装置及び膜形成方法
US5633192A (en) 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
TW264601B (enExample) 1993-09-17 1995-12-01 Hitachi Seisakusyo Kk
JPH07288237A (ja) * 1994-04-15 1995-10-31 Nippon Steel Corp プラズマ励起セル装置
US5783101A (en) 1994-09-16 1998-07-21 Applied Materials, Inc. High etch rate residue free metal etch process with low frequency high power inductive coupled plasma
JP3769059B2 (ja) * 1996-02-02 2006-04-19 雅弘 西川 超音波・プラズマ・粒子ビーム複合プロセス装置及び薄膜の形成方法並びに表面の平滑化方法
US5788799A (en) 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
JPH1012908A (ja) * 1996-06-21 1998-01-16 Toshiba Corp 半導体装置及び微粒子半導体膜の製造方法及び光電変換素子
CN1181220C (zh) 1997-06-13 2004-12-22 尤纳克西斯贸易公司 涂层工件的制造方法、方法的应用及其装置
US6472300B2 (en) 1997-11-18 2002-10-29 Technologies And Devices International, Inc. Method for growing p-n homojunction-based structures utilizing HVPE techniques
US6660083B2 (en) 2001-03-30 2003-12-09 Technologies And Devices International, Inc. Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE
US6992011B2 (en) 2003-01-15 2006-01-31 Tokyo Electron Limited Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma
JP2004288964A (ja) * 2003-03-24 2004-10-14 Sumitomo Electric Ind Ltd ＧａＮ結晶の成長方法
US6818061B2 (en) 2003-04-10 2004-11-16 Honeywell International, Inc. Method for growing single crystal GaN on silicon
WO2006000846A1 (en) 2004-06-08 2006-01-05 Epispeed S.A. System for low-energy plasma-enhanced chemical vapor deposition
WO2008000846A1 (es) 2006-06-19 2008-01-03 Natraceutical S.A. Método para la esterilización de materiales de cacao mediante co2 supercrítico

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001065590A2 (en) * 2000-03-02 2001-09-07 Tokyo Electron Limited Esrf source for ion plating epitaxial deposition

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
LEI T et al: "Epitaxial growth of Zinc Blende and Wurtzitic Gallium Nitride thin films on (001) Silicon," Applied Physics Letters, vol. 59, no. 8, 19 August 1991, pages 944-946 *
OHTANI A et al: "Microstructure and Photoluminescence of GaN grown on Si(111) by Plasma-assisted Molecular Beam Epitaxy" Applied Physics Letters, vol. 65, no. 1, 4 July 1994, page 63 *
RUBIN M et al: 'P-type Gallium Nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion or coevaporation of Mg,' Applied Physics Letters, vol. 64, no. 1, 3 January 1994, pages 64-66 *

Also Published As

Publication number Publication date
US9466479B2 (en) 2016-10-11
CA2597623C (en) 2015-07-14
KR20070114361A (ko) 2007-12-03
WO2006097804A2 (en) 2006-09-21
CN101128911B (zh) 2010-09-08
SG160345A1 (en) 2010-04-29
RU2462786C2 (ru) 2012-09-27
US20130260537A1 (en) 2013-10-03
KR20120054093A (ko) 2012-05-29
CN101128911A (zh) 2008-02-20
KR101358966B1 (ko) 2014-02-21
KR101366181B1 (ko) 2014-02-24
EP1872383A2 (en) 2008-01-02
RU2007135977A (ru) 2009-04-10
AU2006224282A1 (en) 2006-09-21
WO2006097804A3 (en) 2007-01-18
CA2597623A1 (en) 2006-09-21
US20080152903A1 (en) 2008-06-26
JP2008532306A (ja) 2008-08-14
JP5214251B2 (ja) 2013-06-19
WO2006097804B1 (en) 2007-02-15
US8647434B2 (en) 2014-02-11

Similar Documents

Publication Publication Date Title
AU2006224282B2 (en) System and process for high-density,low-energy plasma enhanced vapor phase epitaxy
US6784085B2 (en) MIIIN based materials and methods and apparatus for producing same
EP2573206B1 (en) Method for growing a group (iii) metal nitride film
US5637146A (en) Method for the growth of nitride based semiconductors and its apparatus
CA2653581A1 (en) Migration and plasma enhanced chemical vapour deposition
US20170183776A1 (en) Electrostatic control of metal wetting layers during deposition
Oda et al. Novel epitaxy for nitride semiconductors using plasma technology
CN101124353A (zh) 生长第（ⅲ）族金属氮化物薄膜的方法和装置、以及第（ⅲ）族金属氮化物薄膜
WO2004019390A2 (en) Mbe growth of an algan layer or algan multilayer structure
JP7296614B2 (ja) 窒化物半導体の製造方法、窒化物半導体、及び発光素子
AU2012202511B2 (en) System and Process for High-Density, Low-Energy Plasma Enhanced Vapor Phase Epitaxy
AU2005289367B2 (en) Method and apparatus for growing a group (III) metal nitride film and a group (III) metal nitride film
HK1112026A (en) Method and apparatus for growing a group (iii) metal nitride film and a group (iii) metal nitride film
HK1178218B (en) Method for growing a group (iii) metal nitride film
HK1094623B (en) Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound
HK1094623A1 (zh) 晶态氮化镓基化合物的生长方法以及包含氮化镓基化合物的半导体器件

Legal Events

Date Code Title Description
PC1 Assignment before grant (sect. 113)

Owner name: SULZER METCO AG

Free format text: FORMER APPLICANT(S): EPISPEED S.A.

FGA Letters patent sealed or granted (standard patent)
MK14 Patent ceased section 143(a) (annual fees not paid) or expired