RU2462786C2 - Способ и установка для эпитаксиального выращивания полупроводников типа iii-v, устройство генерации низкотемпературной плазмы высокой плотности, эпитаксиальный слой нитрида металла, эпитаксиальная гетероструктура нитрида металла и полупроводник - Google Patents
Способ и установка для эпитаксиального выращивания полупроводников типа iii-v, устройство генерации низкотемпературной плазмы высокой плотности, эпитаксиальный слой нитрида металла, эпитаксиальная гетероструктура нитрида металла и полупроводник Download PDFInfo
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- RU2462786C2 RU2462786C2 RU2007135977/28A RU2007135977A RU2462786C2 RU 2462786 C2 RU2462786 C2 RU 2462786C2 RU 2007135977/28 A RU2007135977/28 A RU 2007135977/28A RU 2007135977 A RU2007135977 A RU 2007135977A RU 2462786 C2 RU2462786 C2 RU 2462786C2
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- Prior art keywords
- plasma
- vacuum chamber
- epitaxial
- semiconductor
- metal
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Images
Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/00—Stock material or miscellaneous articles
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Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65720805P | 2005-02-28 | 2005-02-28 | |
| US60/657,208 | 2005-02-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2007135977A RU2007135977A (ru) | 2009-04-10 |
| RU2462786C2 true RU2462786C2 (ru) | 2012-09-27 |
Family
ID=36972965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2007135977/28A RU2462786C2 (ru) | 2005-02-28 | 2006-02-28 | Способ и установка для эпитаксиального выращивания полупроводников типа iii-v, устройство генерации низкотемпературной плазмы высокой плотности, эпитаксиальный слой нитрида металла, эпитаксиальная гетероструктура нитрида металла и полупроводник |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US8647434B2 (enExample) |
| EP (1) | EP1872383A2 (enExample) |
| JP (1) | JP5214251B2 (enExample) |
| KR (2) | KR101366181B1 (enExample) |
| CN (1) | CN101128911B (enExample) |
| AU (1) | AU2006224282B2 (enExample) |
| CA (1) | CA2597623C (enExample) |
| RU (1) | RU2462786C2 (enExample) |
| SG (1) | SG160345A1 (enExample) |
| WO (1) | WO2006097804A2 (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2548578C2 (ru) * | 2013-08-19 | 2015-04-20 | Валерий Анатольевич Буробин | Способ получения эпитаксиального слоя бинарного полупроводникового материала на монокристаллической подложке посредством металлоорганического химического осаждения из газовой фазы |
| RU2570099C1 (ru) * | 2014-08-05 | 2015-12-10 | Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") | Способ изготовления полупроводниковой гетероструктуры |
| RU2578870C2 (ru) * | 2014-03-26 | 2016-03-27 | Открытое акционерное общество "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (ОАО "НИФХИ им. Л.Я. Карпова") | Способ выращивания пленки нитрида галлия |
| RU2653118C1 (ru) * | 2014-08-29 | 2018-05-07 | Соко Кагаку Ко., Лтд. | Шаблон для эпитаксиального выращивания, способ его получения и нитридное полупроводниковое устройство |
| RU2715080C1 (ru) * | 2018-12-18 | 2020-02-25 | Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук (ФИАН) | Способ наращивания монокристаллических слоёв полупроводниковых структур |
| RU2723477C1 (ru) * | 2019-04-26 | 2020-06-11 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" | Узел фиксации нагреваемой подложки в вакуумной камере (варианты) |
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| RU2548578C2 (ru) * | 2013-08-19 | 2015-04-20 | Валерий Анатольевич Буробин | Способ получения эпитаксиального слоя бинарного полупроводникового материала на монокристаллической подложке посредством металлоорганического химического осаждения из газовой фазы |
| RU2578870C2 (ru) * | 2014-03-26 | 2016-03-27 | Открытое акционерное общество "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (ОАО "НИФХИ им. Л.Я. Карпова") | Способ выращивания пленки нитрида галлия |
| RU2570099C1 (ru) * | 2014-08-05 | 2015-12-10 | Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") | Способ изготовления полупроводниковой гетероструктуры |
| RU2653118C1 (ru) * | 2014-08-29 | 2018-05-07 | Соко Кагаку Ко., Лтд. | Шаблон для эпитаксиального выращивания, способ его получения и нитридное полупроводниковое устройство |
| RU2715080C1 (ru) * | 2018-12-18 | 2020-02-25 | Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук (ФИАН) | Способ наращивания монокристаллических слоёв полупроводниковых структур |
| RU2723477C1 (ru) * | 2019-04-26 | 2020-06-11 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" | Узел фиксации нагреваемой подложки в вакуумной камере (варианты) |
| RU2796363C1 (ru) * | 2022-07-26 | 2023-05-22 | Акционерное общество "Научно-производственное предприятие "Пульсар" | Способ диагностики состава и кристаллографических параметров полупроводниковых эпитаксиальных гетероструктур |
| RU2824739C1 (ru) * | 2024-03-29 | 2024-08-13 | Акционерное Общество "Элма-Малахит" | Реактор для получения эпитаксиального слоя бинарного полупроводникового материала на монокристаллической подложке посредством металлоорганического химического осаждения из газовой фазы |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006097804A3 (en) | 2007-01-18 |
| CN101128911A (zh) | 2008-02-20 |
| US9466479B2 (en) | 2016-10-11 |
| KR20070114361A (ko) | 2007-12-03 |
| US8647434B2 (en) | 2014-02-11 |
| CA2597623A1 (en) | 2006-09-21 |
| US20080152903A1 (en) | 2008-06-26 |
| KR20120054093A (ko) | 2012-05-29 |
| CA2597623C (en) | 2015-07-14 |
| CN101128911B (zh) | 2010-09-08 |
| US20130260537A1 (en) | 2013-10-03 |
| WO2006097804B1 (en) | 2007-02-15 |
| WO2006097804A2 (en) | 2006-09-21 |
| JP2008532306A (ja) | 2008-08-14 |
| SG160345A1 (en) | 2010-04-29 |
| AU2006224282B2 (en) | 2012-02-02 |
| AU2006224282A1 (en) | 2006-09-21 |
| RU2007135977A (ru) | 2009-04-10 |
| EP1872383A2 (en) | 2008-01-02 |
| KR101358966B1 (ko) | 2014-02-21 |
| JP5214251B2 (ja) | 2013-06-19 |
| KR101366181B1 (ko) | 2014-02-24 |
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