JP2008532306A5 - - Google Patents
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- Publication number
- JP2008532306A5 JP2008532306A5 JP2007557614A JP2007557614A JP2008532306A5 JP 2008532306 A5 JP2008532306 A5 JP 2008532306A5 JP 2007557614 A JP2007557614 A JP 2007557614A JP 2007557614 A JP2007557614 A JP 2007557614A JP 2008532306 A5 JP2008532306 A5 JP 2008532306A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- metal
- source
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 42
- 239000007789 gas Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 25
- 230000008021 deposition Effects 0.000 claims description 25
- 150000004767 nitrides Chemical class 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 7
- 230000008016 vaporization Effects 0.000 claims description 6
- 230000004907 flux Effects 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 5
- 229910052733 gallium Inorganic materials 0.000 claims 5
- 239000013078 crystal Substances 0.000 claims 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims 4
- 238000000407 epitaxy Methods 0.000 claims 4
- 239000002923 metal particle Substances 0.000 claims 4
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000010891 electric arc Methods 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 238000009616 inductively coupled plasma Methods 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims 2
- 230000000644 propagated effect Effects 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 238000001451 molecular beam epitaxy Methods 0.000 claims 1
- 231100000252 nontoxic Toxicity 0.000 claims 1
- 230000003000 nontoxic effect Effects 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000001771 vacuum deposition Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000011364 vaporized material Substances 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65720805P | 2005-02-28 | 2005-02-28 | |
| US60/657,208 | 2005-02-28 | ||
| PCT/IB2006/000421 WO2006097804A2 (en) | 2005-02-28 | 2006-02-28 | System and process for high-density,low-energy plasma enhanced vapor phase epitaxy |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008532306A JP2008532306A (ja) | 2008-08-14 |
| JP2008532306A5 true JP2008532306A5 (enExample) | 2009-03-26 |
| JP5214251B2 JP5214251B2 (ja) | 2013-06-19 |
Family
ID=36972965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007557614A Expired - Fee Related JP5214251B2 (ja) | 2005-02-28 | 2006-02-28 | 高密度低エネルギープラズマ気相エピタキシーの装置 |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US8647434B2 (enExample) |
| EP (1) | EP1872383A2 (enExample) |
| JP (1) | JP5214251B2 (enExample) |
| KR (2) | KR101358966B1 (enExample) |
| CN (1) | CN101128911B (enExample) |
| AU (1) | AU2006224282B2 (enExample) |
| CA (1) | CA2597623C (enExample) |
| RU (1) | RU2462786C2 (enExample) |
| SG (1) | SG160345A1 (enExample) |
| WO (1) | WO2006097804A2 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2316680T3 (es) * | 2003-09-05 | 2009-04-16 | Epispeed S.A. | Laseres de ingaas/gaas sobre silicio producidos mediante lepecvd y mocvd. |
| KR100754404B1 (ko) * | 2006-05-25 | 2007-08-31 | 삼성전자주식회사 | 확산튜브와, 확산공정용 도펀트 소스 및 상기 확산튜브와도펀트 소스를 이용한 확산방법 |
| JP5041883B2 (ja) * | 2007-06-07 | 2012-10-03 | 昭和電工株式会社 | Ｉｉｉ族窒化物半導体層の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法 |
| JP4982259B2 (ja) * | 2007-06-14 | 2012-07-25 | 昭和電工株式会社 | Ｉｉｉ族窒化物化合物半導体発光素子の製造方法 |
| US20110017127A1 (en) * | 2007-08-17 | 2011-01-27 | Epispeed Sa | Apparatus and method for producing epitaxial layers |
| US20110174213A1 (en) | 2008-10-03 | 2011-07-21 | Veeco Compound Semiconductor, Inc. | Vapor Phase Epitaxy System |
| CN101494151B (zh) * | 2009-03-05 | 2013-11-13 | 苏州晶能科技有限公司 | 高效率的一维线性等离子体清洗磁控阴极装置 |
| JP2011213557A (ja) * | 2010-04-01 | 2011-10-27 | Hitachi Cable Ltd | 導電性ｉｉｉ族窒化物単結晶基板の製造方法 |
| TWI562195B (en) | 2010-04-27 | 2016-12-11 | Pilegrowth Tech S R L | Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication |
| US8884525B2 (en) * | 2011-03-22 | 2014-11-11 | Advanced Energy Industries, Inc. | Remote plasma source generating a disc-shaped plasma |
| DE102012201953A1 (de) * | 2012-02-09 | 2013-08-14 | Singulus Technologies Ag | Verfahren und Vorrichtung zur Passivierung von Solarzellen mit einer Aluminiumoxid-Schicht |
| CN102534511B (zh) * | 2012-02-28 | 2013-10-16 | 东北大学 | 一种气相沉积薄膜的装置及其使用方法 |
| EP2872668B1 (en) * | 2012-07-13 | 2018-09-19 | Gallium Enterprises Pty Ltd | Apparatus and method for film formation |
| KR101456549B1 (ko) * | 2012-09-10 | 2014-10-31 | 한국표준과학연구원 | 플라즈마 도움 화학 기상 증착 장치 및 플라즈마 도움 화학 기상 증착 방법 |
| RU2548578C2 (ru) * | 2013-08-19 | 2015-04-20 | Валерий Анатольевич Буробин | Способ получения эпитаксиального слоя бинарного полупроводникового материала на монокристаллической подложке посредством металлоорганического химического осаждения из газовой фазы |
| US9378941B2 (en) | 2013-10-02 | 2016-06-28 | Applied Materials, Inc. | Interface treatment of semiconductor surfaces with high density low energy plasma |
| CN104752162A (zh) * | 2013-12-31 | 2015-07-01 | 江西省昌大光电科技有限公司 | 一种半绝缘GaN薄膜及其制备方法 |
| CN103806093B (zh) * | 2014-02-17 | 2017-01-18 | 清华大学 | 基于icp的化合物半导体的外延生长装置及方法 |
| RU2578870C2 (ru) * | 2014-03-26 | 2016-03-27 | Открытое акционерное общество "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (ОАО "НИФХИ им. Л.Я. Карпова") | Способ выращивания пленки нитрида галлия |
| CN103938272A (zh) * | 2014-04-03 | 2014-07-23 | 清华大学 | 等离子体辅助的外延生长装置及方法 |
| RU2570099C1 (ru) * | 2014-08-05 | 2015-12-10 | Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") | Способ изготовления полупроводниковой гетероструктуры |
| CN105612276B (zh) * | 2014-08-29 | 2017-02-01 | 创光科学株式会社 | 外延生长用模板以及其制作方法、和氮化物半导体装置 |
| TWI728197B (zh) | 2016-10-24 | 2021-05-21 | 美商克萊譚克公司 | 整合至一計量及/或檢測工具中之製程模組 |
| WO2019005144A1 (en) * | 2017-06-30 | 2019-01-03 | Intel Corporation | HIGH FLOW MOLECULAR BEAM EPITAXY AND SELECTIVE EPITAXIAL APPARATUS |
| RU2657674C1 (ru) * | 2017-08-14 | 2018-06-14 | Федеральное государственное бюджетное учреждение науки Институт общей и неорганической химии им. Н.С. Курнакова Российской академии наук (ИОНХ РАН) | Способ получения гетероструктуры Mg(Fe1-xGax)2O4/Si со стабильной межфазной границей |
| CN107675141B (zh) * | 2017-10-25 | 2023-08-04 | 南昌大学 | 一种用于制备氮化物材料的装置 |
| US10892137B2 (en) * | 2018-09-12 | 2021-01-12 | Entegris, Inc. | Ion implantation processes and apparatus using gallium |
| DE102018220678A1 (de) * | 2018-11-30 | 2020-06-04 | Thyssenkrupp Ag | Verfahren zum PVD-Beschichten von Werkstücken |
| RU2715080C1 (ru) * | 2018-12-18 | 2020-02-25 | Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук (ФИАН) | Способ наращивания монокристаллических слоёв полупроводниковых структур |
| CN109817518B (zh) * | 2019-01-18 | 2020-03-10 | 重庆市妙格科技有限公司 | 一种发光二极管原材料加热磷扩装置 |
| CN109830419B (zh) * | 2019-01-24 | 2020-05-19 | 中国原子能科学研究院 | 一种微型潘宁离子源 |
| WO2020215189A1 (en) * | 2019-04-22 | 2020-10-29 | Peng Du | Mbe system with direct evaporation pump to cold panel |
| RU2723477C1 (ru) * | 2019-04-26 | 2020-06-11 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" | Узел фиксации нагреваемой подложки в вакуумной камере (варианты) |
| US11150120B2 (en) * | 2019-09-22 | 2021-10-19 | Applied Materials, Inc. | Low temperature thermal flow ratio controller |
| JP7577093B2 (ja) * | 2022-06-29 | 2024-11-01 | 東京エレクトロン株式会社 | プラズマ処理システムおよびプラズマ処理方法 |
| CN115992346B (zh) * | 2023-02-16 | 2024-08-06 | 北京理工大学 | 一种多功能的离子沉积薄膜制备装置及薄膜沉积方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4368092A (en) | 1981-04-02 | 1983-01-11 | The Perkin-Elmer Corporation | Apparatus for the etching for semiconductor devices |
| JPH0652716B2 (ja) * | 1984-08-24 | 1994-07-06 | 日本電信電話株式会社 | 半導体結晶性膜製造装置 |
| JPS61135126A (ja) * | 1984-12-06 | 1986-06-23 | Hitachi Ltd | プラズマ処理装置 |
| US4948458A (en) | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| JPH03146656A (ja) * | 1989-11-02 | 1991-06-21 | Hitachi Ltd | 膜形成装置及び膜形成方法 |
| US5633192A (en) | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
| KR100321325B1 (ko) | 1993-09-17 | 2002-06-20 | 가나이 쓰도무 | 플라즈마생성방법및장치와그것을사용한플라즈마처리방법및장치 |
| JPH07288237A (ja) | 1994-04-15 | 1995-10-31 | Nippon Steel Corp | プラズマ励起セル装置 |
| US5783101A (en) | 1994-09-16 | 1998-07-21 | Applied Materials, Inc. | High etch rate residue free metal etch process with low frequency high power inductive coupled plasma |
| JP3769059B2 (ja) * | 1996-02-02 | 2006-04-19 | 雅弘 西川 | 超音波・プラズマ・粒子ビーム複合プロセス装置及び薄膜の形成方法並びに表面の平滑化方法 |
| US5788799A (en) | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
| JPH1012908A (ja) * | 1996-06-21 | 1998-01-16 | Toshiba Corp | 半導体装置及び微粒子半導体膜の製造方法及び光電変換素子 |
| WO1998058099A1 (de) | 1997-06-13 | 1998-12-23 | Balzers Hochvakuum Ag | Verfahren zur herstellung beschichteter werkstücke, verwendungen des verfahrens und anlage hierfür |
| US6472300B2 (en) | 1997-11-18 | 2002-10-29 | Technologies And Devices International, Inc. | Method for growing p-n homojunction-based structures utilizing HVPE techniques |
| AU2001241947A1 (en) | 2000-03-02 | 2001-09-12 | Tokyo Electron Limited | Esrf source for ion plating epitaxial deposition |
| US6706119B2 (en) | 2001-03-30 | 2004-03-16 | Technologies And Devices International, Inc. | Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE |
| US6992011B2 (en) | 2003-01-15 | 2006-01-31 | Tokyo Electron Limited | Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma |
| JP2004288964A (ja) * | 2003-03-24 | 2004-10-14 | Sumitomo Electric Ind Ltd | ＧａＮ結晶の成長方法 |
| US6818061B2 (en) | 2003-04-10 | 2004-11-16 | Honeywell International, Inc. | Method for growing single crystal GaN on silicon |
| ES2380699T3 (es) | 2004-06-08 | 2012-05-17 | Dichroic Cell S.R.L. | Sistema para la deposición química en fase de vapor asistida por plasma de baja energía |
| WO2008000846A1 (es) | 2006-06-19 | 2008-01-03 | Natraceutical S.A. | Método para la esterilización de materiales de cacao mediante co2 supercrítico |
-
2006
- 2006-02-28 WO PCT/IB2006/000421 patent/WO2006097804A2/en not_active Ceased
- 2006-02-28 KR KR1020127009425A patent/KR101358966B1/ko not_active Expired - Fee Related
- 2006-02-28 CA CA2597623A patent/CA2597623C/en not_active Expired - Fee Related
- 2006-02-28 EP EP06755827A patent/EP1872383A2/en not_active Withdrawn
- 2006-02-28 KR KR1020077021605A patent/KR101366181B1/ko not_active Expired - Fee Related
- 2006-02-28 US US11/817,208 patent/US8647434B2/en not_active Expired - Fee Related
- 2006-02-28 JP JP2007557614A patent/JP5214251B2/ja not_active Expired - Fee Related
- 2006-02-28 CN CN2006800063432A patent/CN101128911B/zh not_active Expired - Fee Related
- 2006-02-28 RU RU2007135977/28A patent/RU2462786C2/ru not_active IP Right Cessation
- 2006-02-28 AU AU2006224282A patent/AU2006224282B2/en not_active Ceased
- 2006-02-28 SG SG201001337-3A patent/SG160345A1/en unknown
-
2013
- 2013-03-11 US US13/792,238 patent/US9466479B2/en not_active Expired - Fee Related
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