ATE412999T1 - Durch lepecvd und mocvd auf silizium hergestellte gaas/gaas-laser - Google Patents

Durch lepecvd und mocvd auf silizium hergestellte gaas/gaas-laser

Info

Publication number
ATE412999T1
ATE412999T1 AT03020169T AT03020169T ATE412999T1 AT E412999 T1 ATE412999 T1 AT E412999T1 AT 03020169 T AT03020169 T AT 03020169T AT 03020169 T AT03020169 T AT 03020169T AT E412999 T1 ATE412999 T1 AT E412999T1
Authority
AT
Austria
Prior art keywords
gallium arsenide
substrate
formation
gaas
layer
Prior art date
Application number
AT03020169T
Other languages
English (en)
Inventor
Kaenel Hans Von
Isabelle Sagnes
Guillaume Jacques Saint-Girons
Sophie Bouchoule
Original Assignee
Epispeed S A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epispeed S A filed Critical Epispeed S A
Application granted granted Critical
Publication of ATE412999T1 publication Critical patent/ATE412999T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
AT03020169T 2003-09-05 2003-09-05 Durch lepecvd und mocvd auf silizium hergestellte gaas/gaas-laser ATE412999T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03020169A EP1513233B1 (de) 2003-09-05 2003-09-05 Durch LEPECVD und MOCVD auf Silizium hergestellte GaAs/GaAs-Laser

Publications (1)

Publication Number Publication Date
ATE412999T1 true ATE412999T1 (de) 2008-11-15

Family

ID=34130149

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03020169T ATE412999T1 (de) 2003-09-05 2003-09-05 Durch lepecvd und mocvd auf silizium hergestellte gaas/gaas-laser

Country Status (6)

Country Link
US (1) US7588954B2 (de)
EP (1) EP1513233B1 (de)
AT (1) ATE412999T1 (de)
DE (1) DE60324425D1 (de)
ES (1) ES2316680T3 (de)
WO (1) WO2005025019A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602005027196D1 (de) * 2004-04-30 2011-05-12 Dichroic Cell S R L Verfahren zur herstellung von virtuellen ge-substraten zur iii/v-integration auf si(001)
WO2011017773A1 (en) * 2009-08-13 2011-02-17 Newsouth Innovations Pty Limited Donor modulation doping of quantum structures
CN102570309B (zh) * 2012-02-14 2013-04-17 中国科学院半导体研究所 采用选区生长有源区的硅基850nm激光器的制备方法
US9407066B2 (en) 2013-07-24 2016-08-02 GlobalFoundries, Inc. III-V lasers with integrated silicon photonic circuits
CN103579902B (zh) * 2013-10-25 2016-07-13 中国科学院半导体研究所 一种硅基微腔激光器的制作方法
US9917414B2 (en) 2015-07-15 2018-03-13 International Business Machines Corporation Monolithic nanophotonic device on a semiconductor substrate
US10122153B2 (en) 2016-08-29 2018-11-06 International Business Machines Corporation Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same
CN106602404A (zh) * 2016-12-30 2017-04-26 中国工程物理研究院应用电子学研究所 一种半导体激光器及其制作方法
WO2019052672A1 (en) * 2017-09-18 2019-03-21 Tty-Säätiö Sr. SEMICONDUCTOR MULTILAYER STRUCTURE
CN108376640A (zh) * 2018-01-09 2018-08-07 北京邮电大学 InGaAs/Si外延材料的制备方法
TWI829761B (zh) * 2018-11-21 2024-01-21 紐約州立大學研究基金會 具有積體雷射的光學結構
CN110165555A (zh) * 2019-04-28 2019-08-23 西安理工大学 一种基于GexSi1-x可变晶格常数基体的红光半导体激光器
CN111711063A (zh) * 2020-06-30 2020-09-25 度亘激光技术（苏州）有限公司 衬底、半导体器件及半导体器件的制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0988407B9 (de) 1997-06-13 2004-12-15 Unaxis Trading AG Verfahren zur herstellung von werkstücken, die mit einer epitaktischen schicht beschichtet sind
BR0109069A (pt) * 2000-03-08 2004-12-07 Ntu Ventures Pte Ltd Processo para fabricar um circuito integrado fotÈnico
EP1315199A1 (de) 2001-11-22 2003-05-28 ETH Zürich Herstellung von Silizium-Germanium-Strukturen hoher Beweglichtkeit durch Niederenergyplasma unterstützte chemische Dampfabscheidung
EP2267762A3 (de) * 2002-08-23 2012-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiter-Heterostrukturen mit reduzierter Anhäufung von Versetzungen und entsprechende Herstellungsverfahren
US6841795B2 (en) * 2002-10-25 2005-01-11 The University Of Connecticut Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
EP1439570A1 (de) * 2003-01-14 2004-07-21 Interuniversitair Microelektronica Centrum ( Imec) Spannungsrelaxierte SiGe Pufferschichten für Anordnungen mit hoher Beweglichkeit und Herstellungsverfahren
US7812249B2 (en) * 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
DE602005027196D1 (de) * 2004-04-30 2011-05-12 Dichroic Cell S R L Verfahren zur herstellung von virtuellen ge-substraten zur iii/v-integration auf si(001)
US20060157732A1 (en) * 2004-11-09 2006-07-20 Epispeed Sa Fabrication of MOS-gated strained-Si and SiGe buried channel field effect transistors
KR101358966B1 (ko) * 2005-02-28 2014-02-21 에피스피드 에스.에이. 고밀도 저에너지의 플라즈마 인헨스드 기상 에피택시를 위한 시스템 및 공정

Also Published As

Publication number Publication date
US7588954B2 (en) 2009-09-15
WO2005025019A1 (en) 2005-03-17
EP1513233B1 (de) 2008-10-29
EP1513233A1 (de) 2005-03-09
DE60324425D1 (de) 2008-12-11
US20070164311A1 (en) 2007-07-19
ES2316680T3 (es) 2009-04-16

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