AU2002231361A1 - System and method for rapidly controlling the output of an ion source for ion implantation - Google Patents

System and method for rapidly controlling the output of an ion source for ion implantation

Info

Publication number
AU2002231361A1
AU2002231361A1 AU2002231361A AU3136102A AU2002231361A1 AU 2002231361 A1 AU2002231361 A1 AU 2002231361A1 AU 2002231361 A AU2002231361 A AU 2002231361A AU 3136102 A AU3136102 A AU 3136102A AU 2002231361 A1 AU2002231361 A1 AU 2002231361A1
Authority
AU
Australia
Prior art keywords
output
ion
rapidly controlling
ion implantation
ion source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002231361A
Other languages
English (en)
Inventor
Donald W Berrian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proteros LLC
Original Assignee
Proteros LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Proteros LLC filed Critical Proteros LLC
Publication of AU2002231361A1 publication Critical patent/AU2002231361A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
AU2002231361A 2000-10-20 2001-10-19 System and method for rapidly controlling the output of an ion source for ion implantation Abandoned AU2002231361A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24228800P 2000-10-20 2000-10-20
US60/242,288 2000-10-20
PCT/US2001/051033 WO2002033725A2 (fr) 2000-10-20 2001-10-19 Systeme et procede permettant de reguler rapidement la production d'une source d'ions en vue d'une implantation ionique

Publications (1)

Publication Number Publication Date
AU2002231361A1 true AU2002231361A1 (en) 2002-04-29

Family

ID=22914192

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002231361A Abandoned AU2002231361A1 (en) 2000-10-20 2001-10-19 System and method for rapidly controlling the output of an ion source for ion implantation

Country Status (3)

Country Link
US (1) US7247863B2 (fr)
AU (1) AU2002231361A1 (fr)
WO (1) WO2002033725A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6992308B2 (en) * 2004-02-27 2006-01-31 Axcelis Technologies, Inc. Modulating ion beam current
US7365346B2 (en) * 2004-12-29 2008-04-29 Matsushita Electric Industrial Co., Ltd. Ion-implanting apparatus, ion-implanting method, and device manufactured thereby
JP5429448B2 (ja) * 2005-06-03 2014-02-26 アクセリス テクノロジーズ インコーポレーテッド ビームストップ及びビーム調整方法
CN101490792B (zh) * 2006-07-20 2012-02-01 阿维扎技术有限公司 离子沉积设备
JP5675099B2 (ja) 2006-07-20 2015-02-25 エスピーティーエス テクノロジーズ イーティー リミティド イオンソース
JP2009545101A (ja) 2006-07-20 2009-12-17 アビザ テクノロジー リミティド プラズマ源
US8803110B2 (en) * 2006-09-29 2014-08-12 Axcelis Technologies, Inc. Methods for beam current modulation by ion source parameter modulation
US7589333B2 (en) * 2006-09-29 2009-09-15 Axcelis Technologies, Inc. Methods for rapidly switching off an ion beam
US7566887B2 (en) * 2007-01-03 2009-07-28 Axcelis Technologies Inc. Method of reducing particle contamination for ion implanters
US8134130B2 (en) * 2010-07-19 2012-03-13 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Ion source with corner cathode
US8766209B2 (en) * 2011-07-21 2014-07-01 Varian Semiconductor Equipment Associates, Inc. Current limiter for high voltage power supply used with ion implantation system
CN114959551B (zh) * 2022-04-29 2023-12-19 超微中程纳米科技（苏州）有限公司 模具钢刀具离子氮化工艺

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6011417B2 (ja) * 1979-10-23 1985-03-26 株式会社東芝 ホロ−カソ−ド放電装置
US4684848A (en) * 1983-09-26 1987-08-04 Kaufman & Robinson, Inc. Broad-beam electron source
US4754200A (en) * 1985-09-09 1988-06-28 Applied Materials, Inc. Systems and methods for ion source control in ion implanters
US5256947A (en) * 1990-10-10 1993-10-26 Nec Electronics, Inc. Multiple filament enhanced ion source
US5262652A (en) * 1991-05-14 1993-11-16 Applied Materials, Inc. Ion implantation apparatus having increased source lifetime
US5675152A (en) * 1996-01-16 1997-10-07 Taiwan Semiconductor Manufacturing Company Ltd. Source filament assembly for an ion implant machine
US6184532B1 (en) * 1997-12-01 2001-02-06 Ebara Corporation Ion source
WO2001043157A1 (fr) * 1999-12-13 2001-06-14 Semequip, Inc. Source d'ions, systeme et procede pour implantation ionique
JP3716700B2 (ja) * 2000-02-25 2005-11-16 日新電機株式会社 イオン源およびその運転方法
US6777686B2 (en) * 2000-05-17 2004-08-17 Varian Semiconductor Equipment Associates, Inc. Control system for indirectly heated cathode ion source
US6583544B1 (en) * 2000-08-07 2003-06-24 Axcelis Technologies, Inc. Ion source having replaceable and sputterable solid source material
US6627901B2 (en) * 2001-01-04 2003-09-30 Nec Electronics, Inc. Apparatus and method for distribution of dopant gases or vapors in an arc chamber for use in an ionization source
GB0128913D0 (en) * 2001-12-03 2002-01-23 Applied Materials Inc Improvements in ion sources for ion implantation apparatus

Also Published As

Publication number Publication date
US20020053642A1 (en) 2002-05-09
WO2002033725A3 (fr) 2003-05-30
US7247863B2 (en) 2007-07-24
WO2002033725A2 (fr) 2002-04-25

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