AU2002216014A1 - Method for producing high-purity, granular silicon - Google Patents

Method for producing high-purity, granular silicon

Info

Publication number
AU2002216014A1
AU2002216014A1 AU2002216014A AU1601402A AU2002216014A1 AU 2002216014 A1 AU2002216014 A1 AU 2002216014A1 AU 2002216014 A AU2002216014 A AU 2002216014A AU 1601402 A AU1601402 A AU 1601402A AU 2002216014 A1 AU2002216014 A1 AU 2002216014A1
Authority
AU
Australia
Prior art keywords
silicon
reactor
purity
protective layer
producing high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002216014A
Other languages
English (en)
Inventor
Sigurd Buchholz
Leslaw Mleczko
Oliver Felix-Karl Schluter
Ezpeleta Maria Pilar Tejero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SolarWorld AG
Original Assignee
SolarWorld AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SolarWorld AG filed Critical SolarWorld AG
Publication of AU2002216014A1 publication Critical patent/AU2002216014A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
    • B01J2219/0236—Metal based
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0277—Metal based
    • B01J2219/0286—Steel
AU2002216014A 2000-12-06 2001-11-07 Method for producing high-purity, granular silicon Abandoned AU2002216014A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10060469 2000-12-06
DE10060469A DE10060469A1 (de) 2000-12-06 2000-12-06 Verfahren zur Herstellung von hochreinem, granularem Silizium
PCT/EP2001/012846 WO2002046098A1 (de) 2000-12-06 2001-11-07 Verfahren zur herstellung von hochreinem, granularem silizium

Publications (1)

Publication Number Publication Date
AU2002216014A1 true AU2002216014A1 (en) 2002-06-18

Family

ID=7665899

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002216014A Abandoned AU2002216014A1 (en) 2000-12-06 2001-11-07 Method for producing high-purity, granular silicon

Country Status (6)

Country Link
US (1) US20040042950A1 (de)
EP (1) EP1339638B1 (de)
AT (1) ATE273240T1 (de)
AU (1) AU2002216014A1 (de)
DE (2) DE10060469A1 (de)
WO (1) WO2002046098A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10359587A1 (de) * 2003-12-18 2005-07-14 Wacker-Chemie Gmbh Staub- und porenfreies hochreines Polysiliciumgranulat
JP4545505B2 (ja) * 2004-07-22 2010-09-15 株式会社トクヤマ シリコンの製造方法
US7789331B2 (en) * 2006-09-06 2010-09-07 Integrated Photovoltaics, Inc. Jet mill producing fine silicon powder
DE102007049363B4 (de) * 2007-10-09 2010-03-25 Technische Universität Bergakademie Freiberg Verfahren zur Herstellung von Silicium mittels Silanthermolyse
DE102008036143A1 (de) 2008-08-01 2010-02-04 Berlinsolar Gmbh Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium
CN103058194B (zh) * 2008-09-16 2015-02-25 储晞 生产高纯颗粒硅的反应器
US8168123B2 (en) * 2009-02-26 2012-05-01 Siliken Chemicals, S.L. Fluidized bed reactor for production of high purity silicon
TWI454309B (zh) 2009-04-20 2014-10-01 Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd 用於將反應排出氣體冷卻之方法及系統
JP2012523963A (ja) 2009-04-20 2012-10-11 エーイー ポリシリコン コーポレーション ケイ化物がコーティングされた金属表面を有する反応器
WO2012099796A2 (en) * 2011-01-19 2012-07-26 Rec Silicon Inc. Reactor system and method of polycrystalline silicon production therewith
US8875728B2 (en) 2012-07-12 2014-11-04 Siliken Chemicals, S.L. Cooled gas distribution plate, thermal bridge breaking system, and related methods
JP2022525518A (ja) 2019-03-30 2022-05-17 ダウ シリコーンズ コーポレーション ナノ粒子を製造する方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1498266A (en) * 1974-05-13 1978-01-18 Texas Instruments Inc Method of silicon production
US4341749A (en) * 1981-08-14 1982-07-27 Union Carbide Corporation Heating method for silane pyrolysis reactor
US4714632A (en) * 1985-12-11 1987-12-22 Air Products And Chemicals, Inc. Method of producing silicon diffusion coatings on metal articles
KR880000618B1 (ko) * 1985-12-28 1988-04-18 재단법인 한국화학연구소 초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조 방법
US4784840A (en) * 1986-08-25 1988-11-15 Ethyl Corporation Polysilicon fluid bed process and product
JPH0755810B2 (ja) * 1987-03-14 1995-06-14 三井東圧化学株式会社 高純度粒状珪素とその製造方法
JPS63225512A (ja) * 1987-03-14 1988-09-20 Mitsui Toatsu Chem Inc 高純度粒状珪素の製造方法
DE3839705A1 (de) * 1987-11-25 1989-06-08 Union Carbide Corp Beheizter wirbelschichtreaktor
US4906441A (en) * 1987-11-25 1990-03-06 Union Carbide Chemicals And Plastics Company Inc. Fluidized bed with heated liners and a method for its use
JP2562360B2 (ja) * 1987-12-14 1996-12-11 アドバンスド、シリコン、マテリアルズ、インコーポレイテッド 多結晶ケイ素製造用流動床
US5041308A (en) * 1988-12-21 1991-08-20 Osaka Titanium Co., Ltd. Method of coating silicon particles
JPH05246786A (ja) * 1991-07-02 1993-09-24 L'air Liquide コア粉体の存在下で化学蒸着法により珪素ベース超微粒子をコア粉に均一に塗布する方法
JPH06127923A (ja) * 1992-10-16 1994-05-10 Tonen Chem Corp 多結晶シリコン製造用流動層反応器
JPH06127915A (ja) * 1992-10-16 1994-05-10 Tonen Chem Corp 多結晶シリコン製造用流動層反応器

Also Published As

Publication number Publication date
WO2002046098A1 (de) 2002-06-13
US20040042950A1 (en) 2004-03-04
DE10060469A1 (de) 2002-07-04
EP1339638B1 (de) 2004-08-11
ATE273240T1 (de) 2004-08-15
DE50103258D1 (de) 2004-09-16
EP1339638A1 (de) 2003-09-03

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