AU2001295936A1 - Ruthenium film and ruthenium oxide film, and method for formation thereof - Google Patents

Ruthenium film and ruthenium oxide film, and method for formation thereof

Info

Publication number
AU2001295936A1
AU2001295936A1 AU2001295936A AU9593601A AU2001295936A1 AU 2001295936 A1 AU2001295936 A1 AU 2001295936A1 AU 2001295936 A AU2001295936 A AU 2001295936A AU 9593601 A AU9593601 A AU 9593601A AU 2001295936 A1 AU2001295936 A1 AU 2001295936A1
Authority
AU
Australia
Prior art keywords
ruthenium
film
formation
oxide film
ruthenium oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001295936A
Other languages
English (en)
Inventor
Satoshi Ebata
Hitoshi Kato
Yoichiro Maruyama
Yasuo Matsuki
Hiroshi Shiho
Yasuaki Yokoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000375771A external-priority patent/JP2002201162A/ja
Application filed by JSR Corp filed Critical JSR Corp
Publication of AU2001295936A1 publication Critical patent/AU2001295936A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
    • C07F15/0046—Ruthenium compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
AU2001295936A 2000-10-18 2001-10-16 Ruthenium film and ruthenium oxide film, and method for formation thereof Abandoned AU2001295936A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2000318375 2000-10-18
JP2000-318375 2000-10-18
JP2000327613 2000-10-26
JP2000-327613 2000-10-26
JP2000-375771 2000-12-11
JP2000375771A JP2002201162A (ja) 2000-06-08 2000-12-11 ルテニウム膜および酸化ルテニウム膜、ならびにその形成方法
PCT/JP2001/009067 WO2002032839A1 (fr) 2000-10-18 2001-10-16 Film de ruthenium et film d"oxyde de ruthenium, et leur procede de formation

Publications (1)

Publication Number Publication Date
AU2001295936A1 true AU2001295936A1 (en) 2002-04-29

Family

ID=27344966

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001295936A Abandoned AU2001295936A1 (en) 2000-10-18 2001-10-16 Ruthenium film and ruthenium oxide film, and method for formation thereof

Country Status (5)

Country Link
US (1) US6875518B2 (enrdf_load_stackoverflow)
KR (1) KR100787309B1 (enrdf_load_stackoverflow)
AU (1) AU2001295936A1 (enrdf_load_stackoverflow)
TW (1) TWI291938B (enrdf_load_stackoverflow)
WO (1) WO2002032839A1 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6617248B1 (en) 2000-11-10 2003-09-09 Micron Technology, Inc. Method for forming a ruthenium metal layer
KR100505674B1 (ko) * 2003-02-26 2005-08-03 삼성전자주식회사 루테늄 박막을 제조하는 방법 및 이를 이용한 ｍｉｍ캐패시터의 제조방법
EP1672653B1 (en) * 2004-12-20 2019-07-17 Merck Patent GmbH Patterned photovoltaic cell
US7514119B2 (en) * 2005-04-29 2009-04-07 Linde, Inc. Method and apparatus for using solution based precursors for atomic layer deposition
US20120295038A1 (en) * 2005-04-29 2012-11-22 Ce Ma Method and apparatus for using solution based precursors for atomic layer deposition
US7632351B2 (en) * 2005-08-08 2009-12-15 E. I. Du Pont De Nemours And Company Atomic layer deposition processes for the formation of ruthenium films, and ruthenium precursors useful in such processes
US7405153B2 (en) * 2006-01-17 2008-07-29 International Business Machines Corporation Method for direct electroplating of copper onto a non-copper plateable layer
JP4674260B2 (ja) 2009-01-30 2011-04-20 田中貴金属工業株式会社 シクロオクタテトラエントリカルボニルルテニウム系錯体とその製造方法、ならびに、当該錯体を原料とする膜の製造方法
JP2010192738A (ja) * 2009-02-19 2010-09-02 Tokyo Electron Ltd Ｃｕ膜の成膜方法および記憶媒体
KR101034445B1 (ko) * 2009-12-11 2011-05-12 박정혁 인공 조경 시스템
KR101950465B1 (ko) * 2017-08-11 2019-05-02 주식회사 엘지화학 전해용 전극 및 이의 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4250210A (en) 1977-12-27 1981-02-10 The International Nickel Co., Inc. Chemical vapor deposition
JP3224450B2 (ja) * 1993-03-26 2001-10-29 日本酸素株式会社 酸化ルテニウムの成膜方法
US5559262A (en) * 1995-01-31 1996-09-24 E. I. Du Pont De Nemours And Company Process for the preparation of ruthenium complexes and their in situ use as hydrogenation catalysts
US5874364A (en) * 1995-03-27 1999-02-23 Fujitsu Limited Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
JP3611640B2 (ja) * 1995-08-10 2005-01-19 同和鉱業株式会社 第８族元素類の成膜法およびこれに使用する原料化合物
JPH11259656A (ja) * 1998-03-10 1999-09-24 Teito Rapid Transit Authority トンネル壁面判定装置
JPH11269656A (ja) * 1998-03-20 1999-10-05 Kojundo Chem Lab Co Ltd 薄膜形成用組成物の製造法とそれを用いた薄膜
JP4152028B2 (ja) 1999-01-25 2008-09-17 株式会社Ａｄｅｋａ ルテニウム系薄膜の製造方法
US6303809B1 (en) * 1999-12-10 2001-10-16 Yun Chi Organometallic ruthenium and osmium source reagents for chemical vapor deposition
JP4200413B2 (ja) * 2001-01-17 2008-12-24 富士電機ホールディングス株式会社 薄膜半導体の製造装置
US9874364B2 (en) 2014-04-28 2018-01-23 Carrier Corporation Economizer damper fault detection

Also Published As

Publication number Publication date
KR100787309B1 (ko) 2007-12-21
KR20020062762A (ko) 2002-07-29
WO2002032839A1 (fr) 2002-04-25
US6875518B2 (en) 2005-04-05
TWI291938B (enrdf_load_stackoverflow) 2008-01-01
US20030008157A1 (en) 2003-01-09

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