AU2001272702A1 - Method for fabrication of on-chip inductors and related structure - Google Patents
Method for fabrication of on-chip inductors and related structureInfo
- Publication number
- AU2001272702A1 AU2001272702A1 AU2001272702A AU7270201A AU2001272702A1 AU 2001272702 A1 AU2001272702 A1 AU 2001272702A1 AU 2001272702 A AU2001272702 A AU 2001272702A AU 7270201 A AU7270201 A AU 7270201A AU 2001272702 A1 AU2001272702 A1 AU 2001272702A1
- Authority
- AU
- Australia
- Prior art keywords
- fabrication
- related structure
- chip inductors
- inductors
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/627,505 US6309922B1 (en) | 2000-07-28 | 2000-07-28 | Method for fabrication of on-chip inductors and related structure |
US09/627,505 | 2000-07-28 | ||
US09627505 | 2000-07-28 | ||
PCT/IB2001/001351 WO2002011208A2 (en) | 2000-07-28 | 2001-07-27 | Method for fabrication of on-chip inductors and related structure |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001272702A1 true AU2001272702A1 (en) | 2002-02-13 |
Family
ID=24514926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001272702A Abandoned AU2001272702A1 (en) | 2000-07-28 | 2001-07-27 | Method for fabrication of on-chip inductors and related structure |
Country Status (3)
Country | Link |
---|---|
US (2) | US6309922B1 (en) |
AU (1) | AU2001272702A1 (en) |
WO (1) | WO2002011208A2 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6534406B1 (en) * | 2000-09-22 | 2003-03-18 | Newport Fab, Llc | Method for increasing inductance of on-chip inductors and related structure |
US6387747B1 (en) * | 2001-05-31 | 2002-05-14 | Chartered Semiconductor Manufacturing Ltd. | Method to fabricate RF inductors with minimum area |
US6444517B1 (en) * | 2002-01-23 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | High Q inductor with Cu damascene via/trench etching simultaneous module |
US6852605B2 (en) * | 2003-05-01 | 2005-02-08 | Chartered Semiconductor Manufacturing Ltd. | Method of forming an inductor with continuous metal deposition |
US20050086780A1 (en) * | 2003-10-23 | 2005-04-28 | Chartered Semiconductor Manufacturing Ltd. | Method of fabricating circular or angular spiral MIM capacitors |
US7795708B2 (en) * | 2006-06-02 | 2010-09-14 | Honeywell International Inc. | Multilayer structures for magnetic shielding |
WO2010064412A1 (en) * | 2008-12-04 | 2010-06-10 | 日本電気株式会社 | Bias circuit and method for making bias circuit |
JP5574639B2 (en) * | 2009-08-21 | 2014-08-20 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
WO2011033496A1 (en) * | 2009-09-16 | 2011-03-24 | Maradin Technologies Ltd. | Micro coil apparatus and manufacturing methods therefor |
US8618631B2 (en) * | 2012-02-14 | 2013-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | On-chip ferrite bead inductor |
US20140292460A1 (en) * | 2013-03-29 | 2014-10-02 | Samsung Electro-Mechanics Co., Ltd. | Inductor and method for manufacturing the same |
US10380624B2 (en) * | 2014-03-31 | 2019-08-13 | Microsoft Technology Licensing, Llc | Subset multi-objective optimization in a social network |
CN115513187B (en) * | 2022-11-23 | 2023-04-07 | 广东工业大学 | Chip of integrated on-chip inductor, integrated circuit and electronic device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58101439A (en) | 1981-12-12 | 1983-06-16 | Toshiba Corp | Manufacture of semiconductor device |
JPS5963707A (en) * | 1982-10-04 | 1984-04-11 | Matsushita Electric Ind Co Ltd | Magnetic thin film body |
JPH02262308A (en) * | 1989-03-31 | 1990-10-25 | Toshiba Lighting & Technol Corp | Plane inductor |
US5227659A (en) * | 1990-06-08 | 1993-07-13 | Trustees Of Boston University | Integrated circuit inductor |
JPH07183458A (en) * | 1993-12-24 | 1995-07-21 | Toshiba Corp | Semiconductor device |
US5446311A (en) * | 1994-09-16 | 1995-08-29 | International Business Machines Corporation | High-Q inductors in silicon technology without expensive metalization |
US5635892A (en) | 1994-12-06 | 1997-06-03 | Lucent Technologies Inc. | High Q integrated inductor |
AU2821497A (en) * | 1996-05-03 | 1997-11-26 | Motorola, Inc. | Integrable circuit inductor |
US5652173A (en) * | 1996-05-09 | 1997-07-29 | Philips Electronics North America Corporation | Monolithic microwave circuit with thick conductors |
US5793272A (en) | 1996-08-23 | 1998-08-11 | International Business Machines Corporation | Integrated circuit toroidal inductor |
KR100243658B1 (en) * | 1996-12-06 | 2000-02-01 | 정선종 | Inductor device using substrate biasing technigue and method for fabricating the same |
JPH1167541A (en) * | 1997-08-26 | 1999-03-09 | Toshiba Corp | Inductor device |
US6013939A (en) * | 1997-10-31 | 2000-01-11 | National Scientific Corp. | Monolithic inductor with magnetic flux lines guided away from substrate |
US6191468B1 (en) * | 1999-02-03 | 2001-02-20 | Micron Technology, Inc. | Inductor with magnetic material layers |
-
2000
- 2000-07-28 US US09/627,505 patent/US6309922B1/en not_active Expired - Lifetime
-
2001
- 2001-01-02 US US09/754,806 patent/US7173318B2/en not_active Expired - Lifetime
- 2001-07-27 AU AU2001272702A patent/AU2001272702A1/en not_active Abandoned
- 2001-07-27 WO PCT/IB2001/001351 patent/WO2002011208A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US6309922B1 (en) | 2001-10-30 |
US20020011646A1 (en) | 2002-01-31 |
WO2002011208A3 (en) | 2002-07-18 |
US7173318B2 (en) | 2007-02-06 |
WO2002011208A2 (en) | 2002-02-07 |
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